TRANSISTOR S70 Search Results

transistor s72

Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Contextual Info: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

BUK444-400B

Contextual Info: N AMER PHIL IPS/DISCR ETE LTE D • LbS3T31 QQ30S30 Obi ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a lastic full-pack envelope, he device Is intended for use in

Contextual Info: KS621K40A41 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1BOO 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

2N5943 equivalent

Abstract: 2N5943 JOHANSON 2951 Stackpole ferrite
Contextual Info: MOTOROLA SC X S T R S / R F 4bE D • b3b?2S4 0014103 7 MOTOROLA ■ ■SEMICONDUCTOR TECHNICAL DATA I flOTb P 3 I- 2 3 2N5943 The RF Line 1.2 Gite - 6 0 mAdc NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed specifically for broadband applications requiring low

BFY45

Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
Contextual Info: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for

MRF260

Abstract: MRF262 MRF260 motorola B 647 AC transistor S0235
Contextual Info: I MOT OROL A SC XSTRS/R MbE F D b3b?2SM omMsa? MOTOROLA - SEMICONDUCTOR TECHNICAL DATA 3 3 *2» - 0*0 MRF260 The R F Line SW 1 3 6 -1 7 5 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . d esigned fo r 12.5 V o lt VHF large-signal p o w e r a m p lifie r a p p li­

IMIT TC2

Abstract: Mosfet 2n7000 2N7002-702 2N7002 MARKING 712 mosfet motor dc 48v NDS7002A-712 702 TRANSISTOR sot-23 "ON Semiconductor" 2N7002 NDS7002A 2N7000
Contextual Info: Semiconductor March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ] QM400HA-2HB • Ic f • • • • Collector current.400A V C EX Coliector-ernitter voltage 1000V hFE DC current gain. 750

7002N

Abstract: 2N7000 S7002
Contextual Info: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

CP Clare RELAY

Abstract: ITC117P BS7002 16pin 617
Contextual Info: CP dare ITC117P CORPORATION ITC117P Integrated Telecom Circuit DESCRIPTION The Integrated Telecom Circuit, Model ITC117P, features the com bined circuitry for: • Form A solid state relay for use as a hookswitch ■ Bridge rectifier ■ Darlington transistor

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591 ISSUE 3 - OCTOBER 1995_ O FEATURES * Low Equivalent on resistance RcE sat =3 ®m iî a t 1A* COMPLEMENTARY TYPE- FMMT491 PARTMARKING DETAIL - 591 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER

2N7002

Abstract: 2N7000 FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7002A 2N7000 MOSFET 100C NDS7002A
Contextual Info: Novem ber 1995 FAIRCHILD M IC D N D U C T O R 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

marking s70

Abstract: marking k70
Contextual Info: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data •

Contextual Info: BS870 N-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown -i g; Top View ip "gr i! It 9 5 lflS Pin configuration

Contextual Info: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 -H : h -A T TOP! VIEW B C 1 Mechanical Data Case: SOT-23, Molded Plastic

Contextual Info: N o vem b er 1995 FAIRCHILD M ICONDUCTQR i 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

k70 sot 23

Abstract: Marking s70 BS870 DS11302 transistor k70
Contextual Info: BS870 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWERSEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 -H : h - A T TOP! VIEW B Mechanical Data Case: SO T-23, Molded Plastic

SiP4282DVP-1-T1-E3

Abstract: SC-75 SiP4282 SiP4282-1-T1-E3 SiP4282-3-T1-E3 SC75 JAN p-channel mosfet transistor low power
Contextual Info: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device that

Contextual Info: 6 Pin Transistor Output Hermetically Sealed Ceramic Optocoupler Isocom Lid supplies high reliability devices or applications requiring an operaling t e m p e r a ­ ture range of - 5 5 ° C to + 1 2 5 “ C (e.g.military applications . Devices supplied have completed rigorous