BFY4 Search Results

35 micro-X Package MARKING CODE 3

Abstract: Micro-X marking "K" INFINEON DETAIL marking f infineon GHZ micro-X Package BFY420 S 35 micro-X Package MARKING CODE F 35 micro-X Package MARKING CODE 0 transistor "micro-x" "marking" 3
Contextual Info: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For High Gain Low Noise Amplifiers  For Oscillators up to 10 GHz  Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz  Hermetically sealed microwave package

35 micro-X Package MARKING CODE Q

Abstract: BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • • 4 3 1 2 For Medium Power Amplifiers Compression Point P -1dB =19dBm 1.8 GHz Max. Available Gain G ma = 16dB at 1.8 GHz • Hermetically sealed microwave package •

transistor "micro-x" "marking" 3

Abstract: marking K "micro x" BFY420
Contextual Info: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding G ms = 21 dB at 1.8 GHz • Hermetically sealed microwave package

BFY42

Abstract: BFY420
Contextual Info: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package

d marking Micro-X

Abstract: BFY450 RF TRANSISTOR NPN MICRO-X
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz

Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz

2SC9830

Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)

micro-X Package MARKING CODE C

Abstract: INFINEON DETAIL micro-X Package MARKING CODE 3
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

transistor C 5611

Abstract: 35 micro-X Package MARKING CODE Q
Contextual Info: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-idB =19dBm 1.8 GHz Max. Available Gain G m a = l6dB at 1.8 GHz • Hermetically sealed microwave package

RF TRANSISTOR NPN MICRO-X

Contextual Info: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

BFY405

Abstract: Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K"
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

BFY45

Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
Contextual Info: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for

marking K "micro x"

Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz

BFY33

Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.

Contextual Info: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P - i d B =19dBm 1.8 GHz Max. Available Gain G m a = 16dB at 1.8 GHz • Hermetically sealed microwave package

Contextual Info: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package

35 micro-X Package MARKING CODE Q

Abstract: BFY420 RF TRANSISTOR NPN MICRO-X Siemens Microwave Micro-X marking "K" low noise Micro-X marking "K"
Contextual Info: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package

MICROWAVE TRANSITOR

Abstract: BFY405
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz Outstanding G ms = 23 dB at 1.8 GHz • Hermetically sealed microwave package

transistor C 5611

Abstract: INFINEON DETAIL
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Low Current Applications  For Oscillators up to 12 GHz  Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz  Hermetically sealed microwave package

Contextual Info: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Low Current Applications  For Oscillators up to 12 GHz  Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz  Hermetically sealed microwave package

RF TRANSISTOR NPN MICRO-X

Abstract: BFY405
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

microwave transistor siemens

Abstract: 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S
Contextual Info: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package

Micro-X marking "K"

Abstract: transistor "micro-x" "marking" 3 micro-X Package MARKING CODE C INFINEON DETAIL
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz