TRANSISTOR S 623 Search Results

2SK659

Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #

BD 130 NPN transistor

Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
Contextual Info: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

Bd 130 NPN transistor

Abstract: 62702-D394 transistor z5
Contextual Info: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

field-effect transistors

Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .

pepi c

Abstract: MRF426
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.

AF 239 S

Abstract: AF 239 af239 Germanium power S 239 L siemens
Contextual Info: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

transistor 1548 b

Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
Contextual Info: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

transistor fp 1016

Abstract: BFQ34T ON4497 FP 801 UBB361
Contextual Info: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

113ZE

Contextual Info: h "7 > V 7 $ /Transistors DTC113ZE/DTC113ZUA/DTC113ZKA k DTC113ZE/DTC113ZUA/DTC113ZKA > - > '* $ Digital Transistors Includes Resistors) ^-/Transistor Switch ÿ , î / 9 n > b ÿ > * s 7 . $ ( S S ìr tiB t' 7 • • ^ Jf^ Ü lS I/'D im e n s io n s (Unît : mm)

Contextual Info: S IE M E N S NPN Silicon High-Voltage Transistor B F 622 • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F 623 PNP Type Marking Ordering Code

MHQ6100

Abstract: IC AL 6001
Contextual Info: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

WS300

Contextual Info: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo * K S P 5 5 : 60V KSPS6:80V • Collector Dissipation: Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Sym bol C haracteristic Collector-Base Voltage

MPSA10

Abstract: MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14
Contextual Info: SAMS UN G SEMICONDUCTOR INC MPSA10 14E 0 | 7«lb4iq2 00073Mb S | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

transistor Bf 444

Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324
Contextual Info: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­

Contextual Info: 3SE D • Ö23b320 QQ1L7S1 S MKSIP y -2 1 - 3 3 NPN Silicon High Voltage Transistor BF 622 _ SIEMENS/ SPCLi S E M I C O N D S _ • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage

BUW51.52

Contextual Info: _ ^2=1237 0G2âôb3 S • ~ X H"'3 3 “ i ' i SGS-THOMSON slLiOTOiOÛS S G S-THOMSON B U W 51 3DE D FAST SWITCHING POWER TRANSISTOR FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN INTERNAL SCHEMATIC DIAGRAM

2SC3733

Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Contextual Info: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier

AF289

Abstract: Q62701-F92 Germanium Transistor Germanium power
Contextual Info: ESC D • Ô235b05 DÜQ4QÖ3 ^ « S I E G PIMP Germanium UHF Transistor AF289 - SIEMENS AKTIENGESELLSCHAF - -T-JN07 AF 289 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly intended

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

Contextual Info: f Z J *> 7 1 S C S - T H O M S O N 5iO gi |[Li ìl(Q tMD©i M J D 50 n ^ n V0LTAGE f a s t - s w it c h in g NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")