TRANSISTOR S 1014 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed

transistor s 1014

Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Contextual Info: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor

500W TRANSISTOR

Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
Contextual Info: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor

HV400

Abstract: 1030 mhz interrogator 1030 PULSED
Contextual Info: HVV1011-075L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-075L device is a high voltage silicon enhancement mode RF transistor

HVV1011-1000L

Abstract: transistor 1000W 1000w power supply 1030 PULSED
Contextual Info: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor

LT 6242

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP624,-2,-4 TENT A T I V E DA T A PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in m m The T O S H I B A TLP624, -2 and -4 consist of a g a l l i u m a r s e n i d e infrared emitting diode op t i c a l l y coupled to a photo-transistor.

Contextual Info: GaAs IRED S PHOTO-TRANSISTOR T L P 6 2 1 , - 2 , - 4 Unit in mm PROGRAMMABLE CONTROLLER AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621-2 offers two isolated channels in

Contextual Info: SGS-THOMSON STE53NA50 RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STE53NA50 . . . . . . . . . dss 500 V R d S (o ii) < 0.085 Q. Id 53 A TYPICAL Ros(on) =0.075 £2 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY

Contextual Info: T O SH IB A TLP629,TLP629-2,TLP629-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP629, TLP629-2, TLP629-4 TELECOMMUNICATION OFFICE MACHINE TELEPHONE USE EQUIPMENT The T O S H IB A TLP629, -2, and -4 consists of a photo­ transistor op tically coupled to a g alliu m arsenide

TLP555

Abstract: TLP558 1S1588 E67349
Contextual Info: TOSHIBA TLP558 TOSHIBA PHOTOCOUPLER G a A M s IRED & PHOTO IC TLP558 ISOLATED BUS DRIVER HIGH SPEED LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES MOS FET GATE DRIVER TRANSISTOR INVERTER The T O S H IB A TLP558 consists of a G a A iA s lig h t em itting diode and

Contextual Info: T O SH IB A TLP559 TLP559 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION G a A M s IRED & PHOTO IC LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING PO W ER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The T O S H IB A TLP559 consists of a G aA€A s high-output lig h t

p733

Abstract: toshiba TLP tip733
Contextual Info: TOSHIBA TLP 733JL P 734 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI P733 TI P73ZL OFFICE MACHINE U n it in mm HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY The T O S H IB A TLP733 and TLP734 consist of a photo-transistor op tically coupled to a gallium arsenide infrared em itting diode in a

Contextual Info: TOSHIBA TLP624,TLP624-2,TLP624-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP624, TLP624-2, TLP624-4 PRO GRAM M ABLE CONTROLLERS AC / DC-INPUT MODULE TELECOMMUNICATION The T O S H IB A TLP624, -2 and -4 consist of a g alliu m arsenide infrared em itting diode op tically coupled to a photo-transistor.

DARLINGTON TRANSISTOR ARRAYS 2A

Abstract: PU4123 hlk2 U412 PU3123 PU4423 h05 diode AH-05
Contextual Info: Power Transistor Arrays PU 3123, PU 4123, PU 4423 PU3123, PU4123, PU4423 P a c k a g e D im e n s io n s PU 3123 Unit: mm 4.2 m a x . 20.5max. Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifier, S w itch in g 0.8 ±0.25 J • F e a tu re s

TLP635

Abstract: TLP635 GB LP636 D 636 R
Contextual Info: TLP635,636 GaAs IRED a PHOTO-TRANSISTOR T E NTATIVE DATA OFFICE MACHINE. Unit in mm HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The T O S H I B A T L P 635 and T LP636 consist of a p h o t o - t r a n s i s t o r optically coupled to a gallium

Contextual Info: SAMSUNG E L E C T R O N I C S MJD44H11 42E INC 7^4145 D 000=1013 T S S Î 1 G K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHINGSUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • L e a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n s N o S u ffix

TIP541

Contextual Info: TYPE TIP541 N-P-N SILICON POWER TRANSISTORS TYPE TIP541 BULLETIN NO. DL-S 7111600, DECEMBER RADIATION-TOLERANT TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS Min hpE of 10 at 4 V , 2 A after 5 X 1014 Fast Neutrons/cm2 4 W at 100°C Case Temperature

Contextual Info: TOSHIBA TLP731,TLP732 TOSHIBA PHOTOCOUPLER T •I P ■ 7 m 3w 1 GaAs IRED & PHOTO-TRANSISTOR T mg mI P ■ 7 « 3 v 3 OFFICE MACHINE U n it in mm HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SVViTCHiNG PO W E R SUPPLY 6 ti 5 i i 4 r? ■ 0.6 The T O S H IB A TLP731 and TLP732 consist of a photo-transistor

2SC2398

Abstract: 2SC2375 2SC1815 2SC2431 2SC2378 2SA1013 2SC2362 2SC2363 2SC2383 2SC2384
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

transistor fn 1016

Abstract: 2SA579 ZS 1032 2SA573 2SA756 2SC1004A
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SD987

Abstract: 2sd987a 25880 2sb807
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2N5938

Abstract: 5276t
Contextual Info: TYPE 2N593S N-P-N SILICON POWER TRANSISTOR TYPE 2 N 5 9 3 8 B U L LETIN NO. DL-S R A D IA T IO N -T O L E R A N T T R A N SISTO R FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING APPLIC A TIO N S Min hpE of 10 at 3 V , 1 A after 1 X 1014 Fast Neutrons/cm2

TA225

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP741G OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. T h e T O S H I B A T L P 7 4 1 G c o n s i s t s of a p h o t o - t h y r i s t o r o p t i c a l l y c o u p l e d to a g a l l i u m a r s e n i d e i n f r a r e d