TRANSISTOR R 29 MF Search Results

diode 437 KZ

Contextual Info: 1DI3OOZ-14O 300a • O utline D ra w in g s POWER TRANSISTOR MODULE 13 21 ,29 8r T " 16 I« • 4# ' F e a tu r e s • m f H igh V o lta g e • 7 'J — KP*g/tt • A S O ^ /a I ' • Îfeifciïfc k BX m In c lu d in g Free W h e e lin g D io d e _ . .

AT-00535

Abstract: Silicon Bipolar Transistor MICRO-X
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE » HEW LETT PA C K A R D • AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 mfcro-X Package Features • • 4M47SÄM GGGt177li 3S3 « H P A 16.0 dBm typical Pi dsat 2.0 GHz 10.5 dB typical Gi dBat 2.0 GHz • 2.5 dB typical NFo at 2.0 GHz

transistor 667

Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
Contextual Info: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2

Contextual Info: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

Contextual Info: MOTOROLA Order this document by MTP1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D TM O S E-FET High Density Pow er FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 30 VOLTS RDS on = 22 mfl T h is a d v a n c e d h igh c e ll d e n s ity H D T M O S p o w e r FE T is

44358

Abstract: 4435a serial counter 24129 lek 923 LC587004 LC587006 LC587008 QIP80A 587006
Contextual Info: Ordering number : ENÌK4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8,12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC5B7008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD

4435a

Abstract: 4435 4435 transistor F 4435a 4435 m sanyo CG LC587004 LC587006 LC587008 QFP80
Contextual Info: Ordering number : EN*4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8, 12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC587008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD

BUK105-50L

Abstract: BUK105-50S BUK105-50US
Contextual Info: PH I L I P S I N T E R N A T I O N A L bSE D B 711GÖSb DGL3ÖSH Philips Semiconductors 41=1 « P H I N Product Spécification PowerMOS transistor BUK105-50L/S Logic level DESCRIPTION Monolithic temperature and

MICRO SWITCH FREEPORT. ILL. U.S.A

Abstract: VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3
Contextual Info: VX SERIES CHART 1 R 3,0 ABSOLUTE MAXIMUM RATINGS SUPPLY VOLTAGE Vs VOLTAGE EXTERNALLY APPLIED TO OUTPUT LOAD ON OUTPUT TEMPERATURE /H\ - 2 4 TO + 2 8 VOLTS DC 28 VOLTS DC MAX WITH OUTPUT TRANSISTOR IN OFF CONDITION ONLY -0.5 VOLTS MIN WITH OUTPUT TRANSISTOR IN

tokin 108

Contextual Info: MF1521-01 SYSTEM POWER SUPPLY IC S1F81100 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

circuit diagram of speech to text

Abstract: 1420hz SA1600 SA2531 telephone ring generator circuit G312AM
Contextual Info: Versatile Single Chip Telephone with 10 Number Repertory Dialler and PIN Lock VDPHV SA1600 - Preliminary Key Features Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Description Line/Speech circuit, LD/MF repertory dialler and tone ringer on one 28 pin CMOS chip NET 4 compatible

design smps 500 watt TL494

Abstract: 600 watt uc3844 smps schematic UC3842 smps design with TL431 250 watt uc3844 smps schematic MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 p6n60e MC34063 Boost MOSFET uc3844 smps power supply mc34063 step up with mosfet transformer orega 40346
Contextual Info: SWITCHMODE t Power Supplies Reference Manual and Design Guide SMPSRM/D Rev. 0, 5/1999 SMPSRM Mfax is a trademark of Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation

motorola 9100-11

Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Contextual Info: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC

TP5125

Abstract: BUK101-50GS T0220AB
Contextual Info: PHILIPS INTERNATIONAL hSE ]> • 7110 0 5 b 00b3û0a 5 3 * \ « P H I N Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, Intended as a general purpose switch for

ad 152 transistor

Abstract: NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high

Y8101

Abstract: Fluke 179 Multimeter circuit diagram FLUKE 79 series II multimeter diagram Fluke 19 Multimeter circuit diagram fluke 8012A fluke Y8101 FLUKE Clamp meter diagram FLUKE 8010a rms dc converter FLUKE 30 Clamp meter diagram FLUKE 79 III manual
Contextual Info: 8010A/8012A Digital Multimeters Instruction Manual FLUKE 8010A/8012A Digital Multimeters Instruction Manual P/N 491944 August 1978 Rev 2 1/85 1985, John Fluke Mfg. Co., Inc. All rights reserved. Litho in U.S.A. IF L U K E I - — ® Dear Customer: Congratulations! We at Fluke are proud to present you with the 8010A and

NT 407 F MOSFET TRANSISTOR

Abstract: AN569 MTP29N15E SMD310
Contextual Info: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high

Contextual Info: MF1521-03 Power Supply IC S1F81100 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

S1F81100F0E1000

Contextual Info: MF1521-03 Power Supply IC S1F81100 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

Contextual Info: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0-07 OHM This advanced TMOS E-FET is designed to withstand high

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

xr2917

Abstract: 2917cp speedometers transistors 250 TH 16J2
Contextual Info: Z * EXAR X R -2 9 1 7 Frequency-to-Voltage Converter FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The X R -29 1 7 Freq ue n cy-to -V o ltag e C onverter is a high accuracy co nve rter consisting o f in p u t co m pa ra to r w ith 40 m V hysteresis, charge pum p, Zener regulator, and o u t­

rc 3150

Contextual Info: MOTOROLA O rder this docum ent SEMICONDUCTOR TECHNICAL DATA by MTP29N15E/D Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0-07 OHM This advanced TM O S E -F E T is designed to w ithstand high

TT2140

Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
Contextual Info: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage