TRANSISTOR QB Search Results

QCA150A60

Abstract: QBB150A60 high power transistor module QBB150A40 QCA150A QCA150A40
Contextual Info: TRANSISTOR MODULE QCA150A/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlington power transistor module with two high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. QCA150A Series-connected type

QCA100A60

Abstract: transistor 100A QBB100A40 QBB100A60 QCA100A40 IC-100A 6A620
Contextual Info: TRANSISTOR MODULE QCA100A/QBB100A40/60 UL;E76102 M QCA100A and QBB100A is a dual Darlington power transistor modules with two high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. QCA100A Series-connected type

Contextual Info: 7 ^ 1 g M 3 00051*13 57T TRANSISTOR MODULE OCA15QA/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

blw95

Contextual Info: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a

BLW95

Abstract: SOT-121A IEC134 sot121a
Contextual Info: N AMER PHILIPS/DISCRETE bTE » • bbS3T31 DOS'iSGb QbT ■ APX BLWyü H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB operated high power industrial and m ilita ry transm itting equipment in the h.f. band. The transistor presents excellent performance as a

Contextual Info: • TRANSISTOR MODULE 7 ^ 1 5 4 3 000S1A5 H13 QCA100A/QBB100A40/60 UL;E76102 M Q C A 1 0 0 A and Q B B 1 OOA is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

100-A60

Abstract: transistor k 620 transistor K 603 k 30 transistor OBB100A40 transistor 603 603 transistor k100a sanrex
Contextual Info: TRANSISTOR MODULE QCA100A/QBB100A40/60 Q C A 10 0 A and Q B B 1 OOA a dual D a rlin ­ gton power transistor module w ith two high sp«?d. high power D arlington transis­ tors. Each transistor has a reverse p a ra l­ leled fast recovery diode. • QCAIQOA*-Series-connected type

Contextual Info: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

Contextual Info: N AMER PHILIPS/DISCRETE QbE ] • tbSBTBl O Q m T B ? fi ■ MAINTENANCE TYPE LKE2004T for new design use LTE21009R) MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

"1pg" transistor

Abstract: BUK617-500AE BUK617-500BE BUK617
Contextual Info: N ANER PHILIPS/DISCRETE t.'lE D • bbSBSBl □ QBOat.D 541 « A P X Philips Sem iconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope.

PKB20010U

Contextual Info: J_L N AtlER PHILIPS/DISCRETE QbE D • bbS3TBl DDlSOfl? 3 ■ “ II PKB 20010U MAINTENANCE TYPE _ /V T -33-01 MICROWAVE POWER TRANSISTOR N-P-N silicon transistor fo r use in space, m ilitary and professional applications. It •

Contextual Info: it_ N AUER PHILIPS/DISCRETE QbE D BF939 bb53T31 0012324 T • . ~ — - —— ' T - 2J - I 7 SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled preamplifier in v.h.f.

MC 140 transistor

Abstract: "MC 140" transistor transistor mc 140 BUZ385 T-39-13 MC 150 transistor
Contextual Info: N AMER PHILIPS/DISCRETE QbE 3> PowerMOS transistor • bb53131 0014714 1 BUZ385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor

Contextual Info: N AUER PHILIPS/DISCRETE QbE D MAINTENANCE TYPE bb53T31 OOlSObS 4 A ' MS6075BB00Z PULSED MICROWAVE POWER TRANSISTOR N PN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications.

BUZ73AI

Abstract: buz73a
Contextual Info: N AMER PHILIPS/DISCRETE PowerMUS transistor QbE J> m “ ^53=131 D0144bS 4 • BUZ73A -r_ ?< May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

buz72a

Contextual Info: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: I 1 , 1. t N AMER PHILIPS/DISCRETE QbE D bb53T31 0015704 1 • BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. Also suitable as r.f. amplifier and oscillator in f.m. tuners.

Contextual Info: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74C95 14-Lead DIP, See Diag. 247 4-Bit Parallel In/Parallel Out Shift Register Serial Input NTE74LS95B 4-Bit Shift Register s Clear u Output QA a Output QB B Output QC Output A Input'C Output B V-cc

Contextual Info: Philips Semiconductors bb53^31 0031585 Qbb IAPX Product specification PNP 5 GHz wideband transistor BFQ52 N AilER P H ILIP S /D IS C R E TE DESCRIPTION b'lE 1 PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

buz25

Contextual Info: PowerMOS transistor BUZ25 QbE D N AMER PHILIPS / D I S CR E T E bbS3T31 0014bDS S July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies