Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR PT 02 Search Results

    TRANSISTOR PT 02 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR PT 02 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original
    VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    photo transistor til 78

    Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
    Contextual Info: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083


    OCR Scan
    ECG3040 ECG3041 ECG3042 ECG3043 ECG3044 ECG3045 photo transistor til 78 ecg 3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098 PDF

    Contextual Info: PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE y High total power dissipation PT=450mW TO-92 SOT-23 y High hFE and good linearity y Complementary to PJ2N9014 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Pin : 1. Emitter


    Original
    PJ2N9015 450mW) PJ2N9014 OT-23 PJ2N9015CT PJ2N9015CX OT-23 PDF

    2SC16

    Contextual Info: TOSHIBA { D I S C R E TE /O PT O} 3T • - DËTjTOTTaSO □ OOlfH'í 2 - 1 9097250 TOSHIBA DI SC R E T E / O P T O > 39C 01899 □ SEMICONDUCTOR TECHNICAL DATA * 2 b ? * ì? a * TOSHIBA TRANSISTOR 2S01677 SILICON NPN EPITAXIAL PLANAR INDUSTRIAL APPLICATIONS


    OCR Scan
    2S01677 270UHz) 2SC16 PDF

    D67DE5

    Abstract: Q6015at
    Contextual Info: LO R A S I N D U S T R I E S INC MEE D • 55ÛG44Ô QDG003D 7 « L O R A TRANSISTOR PACKAGE TYPE PART No. DESCRIPTION H fe Pt 25°C Watts iç Amps VEBO Volts VCEO Volts VCBO Volts !ç H fe Amps - 250 250 300 300 5.0 5.0 5.0 5.0 125.00 50.00 S0.00 50.00


    OCR Scan
    QDG003D Q2006LT Q4006LT Q6006LT Q4006AT Q6006AT T0220AB/I T0220AByr GIT03 D67DE5 Q6015at PDF

    transistor et 454

    Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
    Contextual Info: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I


    OCR Scan
    2SC1842 SC-43A transistor et 454 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46 PDF

    transistor Cd 18 p

    Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
    Contextual Info: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V


    OCR Scan
    2SA1759 SC-62 transistor Cd 18 p ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor PDF

    D1088

    Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
    Contextual Info: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o


    OCR Scan
    2SC2001 02SA952tl SC-43B D11738JJ3V0DS00 10lfllAfl D1088 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33 PDF

    Contextual Info: POUETREX 7294621 m N INC ejß]> ]> POWEREX E H m INC 7 2 ^ 2 1 0002431 3 98 D 02431 E X KEE525B0 Powerex, Inc., Hlllls Street, Yaungwood, Pennsylvania 15697 412 925-7272 In te g r a l B a k e r C la iìip Six-Darlington Transistor Module 8 Amperes/300 Volts


    OCR Scan
    KEE525B0 Amperes/300 KEE525B0 PDF

    bi 370 transistor e

    Abstract: Westinghouse diode bi 370 transistor Westinghouse power diode WESTINGHOUSE ELECTRIC ke92 KE92450510 westinghouse power transistor transistor al fm westinghouse ac motor
    Contextual Info: 7 2 9 4 6 2 1 P O W E R E X INC ¡bi 7 5 T 4 LiH 1 ODOQTSB Six/Pac Darlington TRANSISTOR „ Modules Dim A B C D E F G H J K L M N O P Q R S T U V w X Y Inches 3.70 3.150+.020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50


    OCR Scan
    KE92450510 KE92450510 bi 370 transistor e Westinghouse diode bi 370 transistor Westinghouse power diode WESTINGHOUSE ELECTRIC ke92 westinghouse power transistor transistor al fm westinghouse ac motor PDF

    KD22450510

    Abstract: kd2245 kd221K 3150 transistor
    Contextual Info: Z ^ b ¿ l POWEREX INC 50 Amperes 4 5 0 /1 OOO Volts T b P E |7 B ^ b g l 0000^55 1 W ^ r T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 Millimeters 94 Max 80 ± 0 .5


    OCR Scan
    T-33-35 M5-10 31-Max Applica22450510 KD221K0510 KD22450510 KD22450510 kd2245 kd221K 3150 transistor PDF

    pj 86 diode

    Abstract: pj 84 diode pj 48 diode PJ 63 diode ke92 Westinghouse diode WESTINGHOUSE ELECTRIC motor ac WESTINGHOUSE dc motor KE924503 pj 17 diode
    Contextual Info: 7294621 POWEREX INC Tâ Dim A B C D E F G H J K L M N O P Q R S T U V w X y b Ë J 72TML51 ODODTSO t. Inches 3.70 3.150+,020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50 1.22 1.181 .339 .118 .295 T-33-35 Millimeters 94 80±.25


    OCR Scan
    72TML51 T-33-35 KE92450310 33I35 pj 86 diode pj 84 diode pj 48 diode PJ 63 diode ke92 Westinghouse diode WESTINGHOUSE ELECTRIC motor ac WESTINGHOUSE dc motor KE924503 pj 17 diode PDF

    UE-111AJ

    Abstract: nitto SWT-20 transistor marking PB nitto UE111AJ ke marking transistor 2091J Nitto marking code transistor HK mas1025 UE111
    Contextual Info: 1 PRODUCT CODING SYSTEM 9.12.2004 QSP0005_WEB.026 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document: ESD EWS ID MBB T&R 2 Electrostatic Sensitive Device


    Original
    QSP0005 MAS1025AC MAS1025ACSAxx) MAS9124AACAxx) UE-111AJ nitto SWT-20 transistor marking PB nitto UE111AJ ke marking transistor 2091J Nitto marking code transistor HK mas1025 UE111 PDF

    diode 1BL

    Abstract: WESTINGHOUSE dc motor transistor fag 35 powerex kd powerex kd22 kd2245 kd221K WESTINGHOUSE transistor 1BL diode
    Contextual Info: y i 7 294621 POWERËX INC fag D e | TaiMtai OODOTEb 1 | Dual Darlington TRANSISTOR Modules 75 Amperes 4 5 0 /1 OOO Volts Dim A B C D E F G H K M Inches 3.700 Max . 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 € Millimeters 94 Max 80 ± 0 .5 20


    OCR Scan
    KD22457510 KD221K7510 T-33-35 diode 1BL WESTINGHOUSE dc motor transistor fag 35 powerex kd powerex kd22 kd2245 kd221K WESTINGHOUSE transistor 1BL diode PDF

    Contextual Info: 7294621 POWEREX INC Dim A B C D E F G H I J K L M N O P Q bg Inches 3.62*.02 3.15 .24 .22 1.38 ±.02 .28 .83 .709 .335 1.02 .394 .807 .531 .472 1.181 .758 .118 1 F| 7ET4t,21 PDDDTBfi S |~_D f T-33-2 Metric 92 ±0.4 80 6 5.5 35 ±.4 7 21 18 8.5 26 10 20.5 13.5


    OCR Scan
    T-33-2 KB72450210 KB72450 KB72450210 PDF

    Contextual Info: 7 i i v * > V i V 7 - h -7> v *$ FS series Switching Power Transistor : O u tlin e Dim ensions 2SC4833 5a ,tej": Case : ITO-220 TP5V40FS (NPN) 4.6-0! 2.7to? 0.7^02 Unit I mm A b so lu te Maximum R a tin g s m Item a ie S S f iS Storage Temperature &-£gf5;£Jg


    OCR Scan
    2SC4833 ITO-220 TP5V40FS) 0003bM3 PDF

    Contextual Info: 6115950 MI CRO SE MI 02E CORP/POWER □a 00516 D -r -3 3 -2 .9 D E l b l l S ^ S D 0 0 DD5 1 b 3 CCC10021A T X C J TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: Base and em itter-alum inum


    OCR Scan
    CCC10021A itter-15-m thickness-12 10020/M J10021 10021/M J10021 PDF

    Westinghouse diode

    Abstract: powerex cd ks2245
    Contextual Info: 72^21 OODDÛTT 0 Single Darlington TRANSISTO R Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 A" ~\ T-33-35 10 0 Amperes 4 5 0 /1 0 0 0 Volts Millimeters 94 Max 80 ± 0 .5 20 M 5 x1 0 34 Max 27 8 31 Max


    OCR Scan
    T-33-35 KS22451010. KS22451010 KS221K1010 KS22451010 Westinghouse diode powerex cd ks2245 PDF

    2108 npn transistor

    Abstract: transistor marking 44 sot23 BF840 301 marking code transistor AN 6752
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF840 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 12 Philips Semiconductors Product specification NPN medium frequency transistor BF840 FEATURES PINNING


    Original
    M3D088 BF840 MAM255 SCA63 115002/00/04/pp8 2108 npn transistor transistor marking 44 sot23 BF840 301 marking code transistor AN 6752 PDF

    Bf240

    Abstract: transistor d 2333 2108 npn transistor Transistor B 886 NPN C 5344 transistor NPN 3474 str 6707 BF240 philips
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF240 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING


    Original
    M3D186 BF240 MAM258 SCA63 115002/00/04/pp8 Bf240 transistor d 2333 2108 npn transistor Transistor B 886 NPN C 5344 transistor NPN 3474 str 6707 BF240 philips PDF

    PMBTA42

    Abstract: 2108 npn transistor BP317 PMBTA92
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA42 NPN high-voltage transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 22 Philips Semiconductors Product specification NPN high-voltage transistor PMBTA42 FEATURES PINNING


    Original
    M3D088 PMBTA42 PMBTA92. MAM255 SCA63 115002/00/03/pp8 PMBTA42 2108 npn transistor BP317 PMBTA92 PDF

    2108 npn transistor

    Abstract: BFS19
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFS19 NPN medium frequency transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 15 Philips Semiconductors Product specification NPN medium frequency transistor BFS19 FEATURES PINNING


    Original
    M3D088 BFS19 MAM255 SCA63 115002/00/03/pp8 2108 npn transistor BFS19 PDF

    2SB1151

    Abstract: 2SD1691 D16190EJ1V1DS00
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)


    Original
    2SD1691 O-126 2SB1151 2SB1151 2SD1691 D16190EJ1V1DS00 PDF

    Westinghouse module

    Abstract: kd32 KD32451
    Contextual Info: 7294621 P OWEREX 100 Amperes 450 /1 000 Volts INC " bS DE-fl T E T M b S l a 0 D C H 3 0 D f D T-33-35 M odu,ls DARLINGTON Dim A B C D E F G H J K L M N P Inches 3.740 Max 3.150 + .010 .90 Dim A B C D E F G H J K L M N P Q R S T U Inches 4.250 Max 3.660+.020


    OCR Scan
    T-33-35 KD32451010 KD421K1010 KD32451010 Westinghouse module kd32 KD32451 PDF