TRANSISTOR PT 02 Search Results

Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

photo transistor til 78

Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Contextual Info: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083

Contextual Info: PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE y High total power dissipation PT=450mW TO-92 SOT-23 y High hFE and good linearity y Complementary to PJ2N9014 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Pin : 1. Emitter

2SC16

Contextual Info: TOSHIBA { D I S C R E TE /O PT O} 3T • - DËTjTOTTaSO □ OOlfH'í 2 - 1 9097250 TOSHIBA DI SC R E T E / O P T O > 39C 01899 □ SEMICONDUCTOR TECHNICAL DATA * 2 b ? * ì? a * TOSHIBA TRANSISTOR 2S01677 SILICON NPN EPITAXIAL PLANAR INDUSTRIAL APPLICATIONS

D67DE5

Abstract: Q6015at
Contextual Info: LO R A S I N D U S T R I E S INC MEE D • 55ÛG44Ô QDG003D 7 « L O R A TRANSISTOR PACKAGE TYPE PART No. DESCRIPTION H fe Pt 25°C Watts iç Amps VEBO Volts VCEO Volts VCBO Volts !ç H fe Amps - 250 250 300 300 5.0 5.0 5.0 5.0 125.00 50.00 S0.00 50.00

transistor et 454

Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
Contextual Info: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I

transistor Cd 18 p

Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
Contextual Info: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V

D1088

Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
Contextual Info: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o

Contextual Info: POUETREX 7294621 m N INC ejß]> ]> POWEREX E H m INC 7 2 ^ 2 1 0002431 3 98 D 02431 E X KEE525B0 Powerex, Inc., Hlllls Street, Yaungwood, Pennsylvania 15697 412 925-7272 In te g r a l B a k e r C la iìip Six-Darlington Transistor Module 8 Amperes/300 Volts

bi 370 transistor e

Abstract: Westinghouse diode bi 370 transistor Westinghouse power diode WESTINGHOUSE ELECTRIC ke92 KE92450510 westinghouse power transistor transistor al fm westinghouse ac motor
Contextual Info: 7 2 9 4 6 2 1 P O W E R E X INC ¡bi 7 5 T 4 LiH 1 ODOQTSB Six/Pac Darlington TRANSISTOR „ Modules Dim A B C D E F G H J K L M N O P Q R S T U V w X Y Inches 3.70 3.150+.020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50

KD22450510

Abstract: kd2245 kd221K 3150 transistor
Contextual Info: Z ^ b ¿ l POWEREX INC 50 Amperes 4 5 0 /1 OOO Volts T b P E |7 B ^ b g l 0000^55 1 W ^ r T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 Millimeters 94 Max 80 ± 0 .5

pj 86 diode

Abstract: pj 84 diode pj 48 diode PJ 63 diode ke92 Westinghouse diode WESTINGHOUSE ELECTRIC motor ac WESTINGHOUSE dc motor KE924503 pj 17 diode
Contextual Info: 7294621 POWEREX INC Tâ Dim A B C D E F G H J K L M N O P Q R S T U V w X y b Ë J 72TML51 ODODTSO t. Inches 3.70 3.150+,020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50 1.22 1.181 .339 .118 .295 T-33-35 Millimeters 94 80±.25

UE-111AJ

Abstract: nitto SWT-20 transistor marking PB nitto UE111AJ ke marking transistor 2091J Nitto marking code transistor HK mas1025 UE111
Contextual Info: 1 PRODUCT CODING SYSTEM 9.12.2004 QSP0005_WEB.026 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document: ESD EWS ID MBB T&R 2 Electrostatic Sensitive Device

diode 1BL

Abstract: WESTINGHOUSE dc motor transistor fag 35 powerex kd powerex kd22 kd2245 kd221K WESTINGHOUSE transistor 1BL diode
Contextual Info: y i 7 294621 POWERËX INC fag D e | TaiMtai OODOTEb 1 | Dual Darlington TRANSISTOR Modules 75 Amperes 4 5 0 /1 OOO Volts Dim A B C D E F G H K M Inches 3.700 Max . 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 € Millimeters 94 Max 80 ± 0 .5 20

Contextual Info: 7294621 POWEREX INC Dim A B C D E F G H I J K L M N O P Q bg Inches 3.62*.02 3.15 .24 .22 1.38 ±.02 .28 .83 .709 .335 1.02 .394 .807 .531 .472 1.181 .758 .118 1 F| 7ET4t,21 PDDDTBfi S |~_D f T-33-2 Metric 92 ±0.4 80 6 5.5 35 ±.4 7 21 18 8.5 26 10 20.5 13.5

Contextual Info: 7 i i v * > V i V 7 - h -7> v *$ FS series Switching Power Transistor : O u tlin e Dim ensions 2SC4833 5a ,tej": Case : ITO-220 TP5V40FS (NPN) 4.6-0! 2.7to? 0.7^02 Unit I mm A b so lu te Maximum R a tin g s m Item a ie S S f iS Storage Temperature &-£gf5;£Jg

Contextual Info: 6115950 MI CRO SE MI 02E CORP/POWER □a 00516 D -r -3 3 -2 .9 D E l b l l S ^ S D 0 0 DD5 1 b 3 CCC10021A T X C J TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: Base and em itter-alum inum

Westinghouse diode

Abstract: powerex cd ks2245
Contextual Info: 72^21 OODDÛTT 0 Single Darlington TRANSISTO R Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 A" ~\ T-33-35 10 0 Amperes 4 5 0 /1 0 0 0 Volts Millimeters 94 Max 80 ± 0 .5 20 M 5 x1 0 34 Max 27 8 31 Max

2108 npn transistor

Abstract: transistor marking 44 sot23 BF840 301 marking code transistor AN 6752
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF840 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 12 Philips Semiconductors Product specification NPN medium frequency transistor BF840 FEATURES PINNING

Bf240

Abstract: transistor d 2333 2108 npn transistor Transistor B 886 NPN C 5344 transistor NPN 3474 str 6707 BF240 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF240 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING

PMBTA42

Abstract: 2108 npn transistor BP317 PMBTA92
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA42 NPN high-voltage transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 22 Philips Semiconductors Product specification NPN high-voltage transistor PMBTA42 FEATURES PINNING

2108 npn transistor

Abstract: BFS19
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFS19 NPN medium frequency transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 15 Philips Semiconductors Product specification NPN medium frequency transistor BFS19 FEATURES PINNING

2SB1151

Abstract: 2SD1691 D16190EJ1V1DS00
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)

Westinghouse module

Abstract: kd32 KD32451
Contextual Info: 7294621 P OWEREX 100 Amperes 450 /1 000 Volts INC " bS DE-fl T E T M b S l a 0 D C H 3 0 D f D T-33-35 M odu,ls DARLINGTON Dim A B C D E F G H J K L M N P Inches 3.740 Max 3.150 + .010 .90 Dim A B C D E F G H J K L M N P Q R S T U Inches 4.250 Max 3.660+.020