Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    60APH06 Search Results

    60APH06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance


    Original
    vs-fa40sa50lcot-227e789962002/95/ec+32011/65/eujs709a02-oct-12 PDF

    94803

    Abstract: 60APH06
    Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227 • Low drain to case capacitance


    Original
    vs-fa40sa50lcot-2272002/95/ec2011/65/eu+4js709a02-oct-129480360aph06 PDF

    60APH06

    Abstract: VS-GA250SA60S
    Contextual Info: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original
    vs-ga250sa60sot-227e789962011/65/eu+32002/95/ec12-mar-1260aph06 PDF

    Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical


    Original
    vs-gp250sa60se78996ot-2272002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft


    Original
    vs-gb90da60uot-227e789962002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original
    vs-gt140da60uot-227e789962002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft


    Original
    vs-gb90da60uot-227e789962002/95/ec+32011/65/eujs709a02-oct-12 PDF

    60aph

    Abstract: VS-FA72SA50LC
    Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES SOT-227 PRODUCT SUMMARY • • • • • • • Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements


    Original
    vs-fa72sa50lcot-2272002/95/ec2011/65/eu+3js709a02-oct-1260aph PDF

    Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device


    Original
    vs-fa72sa50lcot-227e789962002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device


    Original
    vs-fa72sa50lcot-227e789962002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance


    Original
    vs-fa40sa50lcot-227e789962002/95/ec+32011/65/eujs709a02-oct-12 PDF

    60APH06

    Contextual Info: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: optimized for minimum saturation voltage and low speed • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original
    vs-ga250sa60sot-227e789962002/95/ec+42011/65/eujs709a02-oct-1260aph06 PDF

    Contextual Info: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original
    vs-ga250sa60sot-227e789962002/95/ec+32011/65/eujs709a02-oct-12 PDF

    A 3150 igbt driver

    Abstract: VS-GT140DA60U 60APH06
    Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original
    vs-gt140da60uot-2272011/65/eu2002/95/ec+312-mar-12a 3150 igbt driver60aph06 PDF

    Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED anti-parallel diodes with ultrasoft


    Original
    vs-gb90da60uot-227e789962002/95/ec+32011/65/eujs709a02-oct-12 PDF