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    60APH Search Results

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    Vishay Semiconductors VS-60APH03L-N3

    DIODE STANDARD 300V 60A TO247AD
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    DigiKey VS-60APH03L-N3 Tube 379 1
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    • 100 $1.56
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    Vishay Semiconductors VS-60APH03-N3

    DIODE STANDARD 300V 60A TO247AC
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    DigiKey VS-60APH03-N3 Tube 44 1
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    Vishay Semiconductors VS-60APH03-N-S1

    DIODE STANDARD 300V 60A TO247AC
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    Vishay Intertechnologies VS-60APH03-N3

    Freds - TO-247 - Rail/Tube (Alt: VS-60APH03-N3)
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    Avnet Americas VS-60APH03-N3 Tube 13 Weeks 500
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    Mouser Electronics VS-60APH03-N3 3,055
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    TTI VS-60APH03-N3 Tube 500
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    TME VS-60APH03-N3 146 1
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    EBV Elektronik VS-60APH03-N3 14 Weeks 25
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    IBS Electronics VS-60APH03-N3 500
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    Vishay Intertechnologies VS-60APH03L-N3

    Freds - TO-247 (Alt: VS-60APH03L-N3)
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    Avnet Americas VS-60APH03L-N3 10 Weeks 500
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    Mouser Electronics VS-60APH03L-N3 770
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    Newark VS-60APH03L-N3 Bulk 687 1
    • 1 $3.52
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    TTI VS-60APH03L-N3 Tube 500
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    TME VS-60APH03L-N3 1
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    EBV Elektronik VS-60APH03L-N3 75 11 Weeks 25
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    60APH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    60aph03

    Abstract: VS-60APH03-N3 INL16 60aph 60APH03-N3
    Contextual Info: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature


    Original     		VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 60aph03 INL16 60aph 60APH03-N3 PDF

    60aph03

    Contextual Info: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature


    Original     		VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph03 PDF

    60aph03

    Contextual Info: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature


    Original     		VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph03 PDF

    Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance


    Original     		VS-FA40SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    94803

    Abstract: 60APH06
    Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227 • Low drain to case capacitance


    Original     		VS-FA40SA50LC OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 94803 60APH06 PDF

    60APH06

    Abstract: VS-GA250SA60S
    Contextual Info: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		VS-GA250SA60S OT-227 E78996 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 60APH06 VS-GA250SA60S PDF

    Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical


    Original     		VS-GP250SA60S E78996 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft


    Original     		VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft


    Original     		VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    60aph

    Abstract: VS-FA72SA50LC
    Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES SOT-227 PRODUCT SUMMARY • • • • • • • Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements


    Original     		VS-FA72SA50LC OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph VS-FA72SA50LC PDF

    Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device


    Original     		VS-FA72SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device


    Original     		VS-FA72SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance


    Original     		VS-FA40SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		VS-GA250SA60S OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    A 3150 igbt driver

    Abstract: VS-GT140DA60U 60APH06
    Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		VS-GT140DA60U OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A 3150 igbt driver VS-GT140DA60U 60APH06 PDF

    Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED anti-parallel diodes with ultrasoft


    Original     		VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF