60APH Search Results

60APH Price and Stock

Filter by Manufacturer

Vishay Intertechnologies


Vishay Intertechnologies VS-60APH03L-N3 Freds - TO-247 - Rail/Tube (Alt: VS-60APH03L-N3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	VS-60APH03L-N3	Tube		12 Weeks	500	1 - 10 - 100 - 1000 $2.10 10000 $2.06	Buy Now
Newark	VS-60APH03L-N3	Bulk	308		1	1 $6.41 10 $4.05 100 $3.47 1000 $3.30 10000 $3.30	Buy Now
TTI	VS-60APH03L-N3	Tube			500	1 - 10 - 100 - 1000 $2.19 10000 $2.19	Buy Now
TME	VS-60APH03L-N3				1	1 $4.61 10 $3.31 100 $2.43 1000 $2.14 10000 $2.14	Get Quote
EBV Elektronik	VS-60APH03L-N3		175	17 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies VS-60APH03-N3 - Rail/Tube (Alt: VS-60APH03-N3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	VS-60APH03-N3	Tube		18 Weeks	500	1 - 10 - 100 - 1000 $1.89 10000 $1.79	Buy Now
TTI	VS-60APH03-N3	Tube			500	1 - 10 - 100 - 1000 $1.87 10000 $1.87	Buy Now
TME	VS-60APH03-N3		285		1	1 $4.74 10 $2.91 100 $2.22 1000 $1.85 10000 $1.75	Buy Now
EBV Elektronik	VS-60APH03-N3			20 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote

60APH Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
60aph03 Abstract: VS-60APH03-N3 INL16 60aph 60APH03-N3 Contextual Info: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature	Original	vs-60aph03-n3 jedec-jesd47 o-247ac 2011/65/eu +62002/95/ec 12-mar-12 60aph03 inl16 60aph 60aph03-n3	PDF
60aph03 Contextual Info: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature	Original	vs-60aph03-n3 jedec-jesd47 o-247ac 2002/95/ec +42011/65/eu js709a 02-oct-12 60aph03	PDF
60aph03 Contextual Info: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature	Original	vs-60aph03-n3 jedec-jesd47 o-247ac 2002/95/ec +42011/65/eu js709a 02-oct-12 60aph03	PDF
Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance	Original	vs-fa40sa50lc ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
94803 Abstract: 60APH06 Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227 • Low drain to case capacitance	Original	vs-fa40sa50lc ot-227 2002/95/ec 2011/65/eu +4js709a 02-oct-12 94803 60aph06	PDF
60APH06 Abstract: VS-GA250SA60S Contextual Info: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)	Original	vs-ga250sa60s ot-227 e78996 2011/65/eu +32002/95/ec 12-mar-12 60aph06	PDF
Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical	Original	vs-gp250sa60s e78996 ot-227 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft	Original	vs-gb90da60u ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	vs-gt140da60u ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft	Original	vs-gb90da60u ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
60aph Abstract: VS-FA72SA50LC Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES SOT-227 PRODUCT SUMMARY • • • • • • • Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements	Original	vs-fa72sa50lc ot-227 2002/95/ec 2011/65/eu +3js709a 02-oct-12 60aph	PDF
Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device	Original	vs-fa72sa50lc ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device	Original	vs-fa72sa50lc ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance	Original	vs-fa40sa50lc ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF

Contextual Info: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)	Original	vs-ga250sa60s ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
A 3150 igbt driver Abstract: VS-GT140DA60U 60APH06 Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	vs-gt140da60u ot-227 2011/65/eu 2002/95/ec +312-mar-12 a 3150 igbt driver 60aph06	PDF
Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	vs-gt140da60u ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED anti-parallel diodes with ultrasoft	Original	vs-gb90da60u ot-227 e78996 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF