2SC250 Search Results

2SC2502

Contextual Info: Inchange Semiconductor Product Specification 2SC2502 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage ・High speed switching time APPLICATIONS ・For use in high-voltage,high-speed ,power switching in inductive circuit.

transistor c2500

Abstract: transistor C2500 B c2500 transistor c2500 Transistor 2sc2500 2SC2500
Contextual Info: 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)

2SC2500

Abstract: transistor 2sc2500 power transistor 2sc2500
Contextual Info: TO SH IBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • • 5 .1 M A X . High DC Current Gain and Excellent hpE Linearity : hFE (l) = 140-600 (Vc e = 1V, Ie = 0.5A)

transistor 2sc2500

Abstract: TO 92L NPN Transistor
Contextual Info: 2SC2500 TO-92L Transistor NPN TO-92L 4.700 5.100 1. EMITTER 7.800 8.200 2. COLLECTOR 0.600 0.800 3. BASE 1 Features 0.350 0.550 3 2 13.800 14.200 1.270 TYP — Strobe flash applications Medium power amplifier applications — 2.440 2.640 0.000 0.300 1.600

transistor 2sc2500

Abstract: 2SC2500
Contextual Info: 2SC2500 TO-92MOD Transistor NPN TO-92MOD 5.800 6.200 1 2 3 1. EMITTER 8.400 8.800 2. COLLECTOR 3. BASE 0.900 1.100 0.400 0.600 Features — 13.800 14.200 Strobe flash applications Medium power amplifier applications — 1.500 TYP 2.900 3.100 0.000 0.380 1.600

Contextual Info: 2SC2505 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2509

Abstract: 10WPEP 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 121ID AC75 C8 15t
Contextual Info: 2SC2509 S IL IC O N N P N 'E P IT A X IA L P L A N A R TYPE Unit in mm 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE P- FEATURES : _ § I 1 £ to 1 . Specified 12.5V, 28MHz Characteristics . | irj H : Output Power : Po=10WpEP <

C2500

Abstract: 2SC2500
Contextual Info: 2SC2500 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2500 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高くリニアリティ良好 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準),

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

EL140

Contextual Info: 2SC2500 SILICQNNPNtriplediffusedtype pcTprqcess STROBE FLASH APPLICATIONS. M ED IUM PO W ER AMPLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hpE Linearity : hyE (i) = 140~600 (V c e = 1V, I q = 0.5A) : hFE(2) = 70 (Min.), 200 (Typ.) (V qe = 1V, I c = 2A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2500 TRANSISTOR NPN TO-92L FEATURES z Strobe Flash Applications z Medium Power Amplifier Applications 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC2500

Abstract: transistor 2sc2500
Contextual Info: TOSHIBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS. • 5.1 M AX. High DC Current Gain and Excellent hEE Linearity : hFE(l) = 140-600 (VeE = lV, Ie = 0.5A)

transistor 2sc2500

Abstract: 2SC2500 TO 92L NPN Transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2500 TRANSISTOR NPN TO-92L FEATURES z Strobe flash applications z Medium power amplifier applications 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

ic 4206

Abstract: Toshiba 2SC2500 2SC2500 transistor 2sc2500
Contextual Info: TO SH IBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm 5.1 MAX. MEDIUM POWER AMPLIFIER APPLICATIONS • • High DC Current Gain and Excellent hEE Linearity : hFE(1) = 140-600 (VCE = 1V, I c = 0.5A)

2SC2503

Abstract: F-05
Contextual Info: SHINDENGEN ELECTRIC MFG Ö2n3fl7 0000072 b • SHEJ 41E J> T"33~/3 • Ratings Maximum 2SC2503 Conditions T8V40F1 Unit Storage Tem perature T s tg - 5 5 ~ + 150 °c Junction Tem perature T1 V ' BO + 150 "C V C ollector to Base Voltage Absolute EIAJ.No. Symbol

BT 140-600

Abstract: ah05 2SC2500 transistor 2sc2500
Contextual Info: TOSHIBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • 5 .1 M A X . High DC Current Gain and Excellent hjrE Linearity : hF E (l) = 140-600 (VCE = 1V, Ie = 0.5A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD 2SC2500 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92MOD FEATURES y Strobe flash applications y Medium power amplifier applications 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

2SC2509

Abstract: AC75
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DeTJiG^SSD 56C <DIS CR ET E/ OP TO 07546 D D D 7 S 4t. □ r - 3 3 ~ ° ? o 2SC2509 S IL IC O N NPN E P IT A X IA L P LA N A R T Y P E _ Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE)

2SC2500

Abstract: C2500 ic203
Contextual Info: 2SC2500 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2500 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高くリニアリティ良好 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準),

transistor 2sc2500

Contextual Info: TOSHIBA 2SC2500 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2 500 STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • H igh D C C u rren t G ain and Ex cellen t h p E L in e a rity • hF E ( l ) = 140-600 (V c e = 1V, I c = 0.5A)

Contextual Info: SHINDENGEN ELECTRIC MFG 41E D • 021*1307 0000074 T ■ SHE J -7-^3 5 ./^ IRatings Item Absolute Maximum E IA J.N o . 2SC2504 Conditions T 1 0 V 4 0 ki Symbol Storage Tem perature T s tg Junction Tem perature C ollector to Base Voltage T| V CBO Collector to Em itter Voltage

transistor c2500

Abstract: 2SC2500 c2500 transistor 2sc2500 transistor C2500 B
Contextual Info: 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)

2SC2508

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DE | T E H 7 5 5 a DDG7S44 □ 5òC 07 544 <DIS C R E T E / O P T O 2SC2508 _ S IL IC O N NPN E P IT A X IA L P L A N A R TYPE Unit VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . : Output Power : ( f=175MHz,

transistor c2500

Abstract: 2SC2500 C2500 transistor C2500 B transistor 2sc2500
Contextual Info: 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)