TRANSISTOR PH 45 Search Results

transistor B42

Abstract: AX400 b42 transistor
Contextual Info: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.

K438-1000A

Abstract: BUK438-1000A BUK438-1000B k4381
Contextual Info: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a

LJE42002T

Abstract: npn 41A
Contextual Info: N AMER PH ILIPS/ DIS CRETE OLE D • bbSBT31 0014131 7 ■ 11 M AINTENANCE TYPE LJE42002T _ J v MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

Contextual Info: N AMER PH IL IPS/D ISCR ETE b'lE » bb53T31 0030733 b32 « A P X Product Specification Philips Semiconductors BUK482-100A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface

GS 069 LF

Abstract: BUK437-400B DIODE JS.4 P02S
Contextual Info: N ANER PH ILI PS/DISCRETE bbSBSBl 0G304Ô0 7Gb • APX LTE » Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 PH ILIPS 7 ^ 3 ? ' ' ° 9 B U K 475-6 00B PowerMOS transistor INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

yb 0d

Contextual Info: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

BUK437-500B

Contextual Info: AMER PH IL IPS /DIS CRET E bTE T> • b b S 3 R 31 OOBDMôS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Transistor 5331

Abstract: BUK657-450B T0220AB Trt-100 transistor ZA 16
Contextual Info: N AMER PH ILI PS/D IS CR ET E SSE D • 1^53=131 002070S t> PowerMOS transistor Fast Recovery Diode FET m BUK657-450B T -S T -IS GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK416-100BE

Abstract: BUK416-100AE 33078 BUK416 LD110
Contextual Info: PH IL IP S INTERNATIONAL bSE T> H 7110flSb 0Db3ô7b GôT « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode fieid-effect power transistor in ISOTOP envelope. The device is intended for use in

BUK655-500B

Contextual Info: N AMER PH ILIPS/DISCRETE LTE D • ^53*131 0030680 BBT « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery

2N2484

Abstract: Q2N2484 MSCO280A q2n* npn transistor
Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2484 Features • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /376 Collector - Base Voltage 60 V Collector - Current 50 mA High Speed, Low Power Bipolar Transistor

BUK436-100B

Abstract: BUK436-100A
Contextual Info: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT131-TO71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:

A 3131 IC

Abstract: 2n5651
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. TYPE: 2N5651 3131 S. E. JAY STREET, STUART, FL 34997 PH: 772 283-4500 FAX: (772)286-8914 Website: http://www.semi-tech-inc.com Email: data1@semi-tech-inc.com CASE OUTLINE: TO-72 NPN SILICON TRANSISTOR

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT136-TO71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT120A/71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 NPN SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT131/71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT132/71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:

NPN Transistor 1500V 20a

Abstract: MJW16018 X10-4
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO -247 TYPE: MJW16018 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:

MJH16018

Abstract: X10-4 NPN Transistor 50A 400V
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO -218 TYPE: MJH16018 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:

MJW6678

Abstract: X10-4
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJW6678 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO -247 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT132 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-78 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING: