TRANSISTOR P31 Search Results

sot-23 marking code T25

Abstract: 400V 100MA NPN SOT23 marking C3Z
Contextual Info: Central" CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z

C10535E

Abstract: C11531E fb1l3n
Contextual Info: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive

XC6SLX16-CSG324

Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller

sf 128 transistor

Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.

FB1F3P

Abstract: ic marking P30 FB1A4M marking P32 transistor transistor marking p30
Contextual Info: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING PACKAGE DRAWING Unit: mm FEATURES • Up to 0.7 A current drive available 2.8±0.2 0.4 +0.1 –0.05 • On-chip bias resistor • Low power consumption during drive

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

transistor f420

Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
Contextual Info: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2

12vdc motor forward reverse control diagram

Abstract: star delta wiring diagram motor start y VFAS1 igbt based induction furnace circuit diagram toshiba electric motor data sheet 90kW treadmill motor controller free circuit diagram of treadmill 5kw inverter circuit diagram 12-pulse induction furnace diagram wiring mitsubishi elevator
Contextual Info: Transistor Inverter High-performance Inverter TOSVERT Flexible for you For your Commercial facilities, offices and factories • Feature: Reduce high-frequency noise*1, Reduce harmonics*1 • Applications: Washing machines, Treadmill, Showcase refrigerators, Medical equipment,

transistor marking code AL

Abstract: TRANSISTOR marking code 432 AL 102 pnp transistor A 673 transistor DPAK marking code 300
Contextual Info: Central" CJD340 NPN CJD350 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD340, CJD350 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high voltage general pur­

Contextual Info: Central CXTA42 NPN CXTA92 PNP Semiconductor Corp. SURFACE MOUNT SILICON HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA42, CXTA92 types are complementary surface mount epoxy molded silicon planar epitaxial tran­ sistors designed for high voltage applications.

Contextual Info: Central" CMPTA46 Semiconductor Corp. SURFACE MOUNT NPN EXTREMELY HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA46 type is a surface mount epoxy molded NPN sili­ con planar epitaxial transistors designed for extremely high voltage applications.

cosmo 1010 817

Abstract: cosmo 817 K1010 cosmo 1010 817 SHARP S21ME4 Liteon PC817 clare relay 1a15 KSD203DC2 aqy210 COSMO 1000 817 MCT2E CIRCUIT DIAGRAM
Contextual Info: Photo Coupler Photo Coupler High Speed Function Type Transistor output Type Absoute Maximum Ratings Model Number Internal Connection IF VCEO IC Diagram mA (V) (mA) Viso (Vrms) Electro-optical Characteristics VF max (V) VCE (sat) max (V) CTR% Safty standards approval

TRANSISTOR p50

Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
Contextual Info: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the

P8X32A-Q44

Abstract: P8X32A-D40 propeller tv font 8 PIN EEPROM
Contextual Info: Stock#: P8X32A-Q44 Category: Propeller-Chips P8X32A-Q44 QFP Chip Introducing Parallax's first full-custom silicon chip, designed from the transistor-level up for speed, flexibility, and pure FUN! The Propeller is a multi-processing chip with eight 32-bit processors (cogs) and a

8 PIN EEPROM

Abstract: P8X32A-M44 P8X32A-D40 eeprom PROGRAMMING using i2c propeller
Contextual Info: Stock#: P8X32A-M44 Category: Propeller-Chips P8X32A-M44 QFN Chip Introducing Parallax's first full-custom silicon chip, designed from the transistor-level up for speed, flexibility, and pure FUN! The Propeller is a multi-processing chip with eight 32-bit processors (cogs) and a

P315 transistor

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT788B DPLS315E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 300 at IC = 2A

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

transistor c3909

Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC

P315 transistor

Contextual Info: DPLS315E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A High DC Current Gain hFE > 300 at IC = 2A Complementary NPN Type Available (DNLS412E)

transistor p98

Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC

P315 transistor

Abstract: J-STD-020D DPLS31
Contextual Info: DPLS315E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW P PR R OD UC UCT T Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A

Contextual Info: SERIES 215 TRANSISTOR SOCKET INTERCONNECTION SPECIALISTS DIA. .370 [9 .4 0 ] OIA. I .100 [2 .5 4 ] 8 PIN 4 PIN 3 PIN - .230 [5 .8 4 ] OIA. .370 [9 .4 0 ] DIA. _L —r .100 [2 .5 4 ] -75 10 PIN CONTACT TYPE S: STANDARD DIP IN SER TIO N FORCE WITHDRAWAL FORCE

50BO

Abstract: sje transistor
Contextual Info: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter

transistor Bc 542

Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S
Contextual Info: « I TELEFUNKEN ELECTRONIC 17E D 0 *1 2 0 0 ^ O D D ^ S * BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature