TRANSISTOR P 0.2 V Search Results

smd transistor 83

Contextual Info: Transistors SMD Type P-Channel Enhancement Mode Vertical D-MOS Transistor KSP230 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 0.1max +0.05 0.90-0.05 +0.2 -0.2 Direct interface to C-MOS,TTL,etc High-speed switching +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2

720 TRANSISTOR smd sot-223

Abstract: KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd
Contextual Info: Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS th Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2

Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2

Contextual Info: IC MOS FET SMD Type SIPMOS Small-Signal-Transistor BSP613P SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features P-Channel +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Enhancement mode 4 Avalanche rated dv/dt rated Ideal for fast switching buck converter

SMD 8A TRANSISTOR

Abstract: transistor SMD 8A smd transistor 8A FDB4020P KDB4020P
Contextual Info: MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P FDB4020P TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High density cell design for extremely low RDS(on).

j668

Abstract: 2SJ668
Contextual Info: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 z 4 V gate drive 5.5 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)

Diode T148

Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2

NEC 2581

Abstract: nec 2405 2405 nec 09640
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance PACKAGE DIMENSIONS in millimeters 2 . 8 ± 0.2 Cre = 0 .3 p F T Y P .

J681

Abstract: transistor J681 j681 transistor 2SJ681
Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)

XC9128B45

Contextual Info: XC9128/XC9129 Series ETR0411-005 1A Driver Transistor Built-In, Step-Up DC/DC Converters •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a synchronous 0.2Ω (TYP.) P-channel switching transistor built-in. A highly efficient and stable current can be supplied up to

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ324,324-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ324 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ327,327-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ327 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2

326-Z

Abstract: MARK 326
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ326,326-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ326 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2

2SJ377

Abstract: J377
Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 4.0 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.16 Ω (typ.)

2sb1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K # Features •E x te rn a l dim ensions (Units: mm) 1) Very low VcE(sat). VcE(sat) = —0.13V (Typ.) 2.9±0.2 = 500m A/50m A) 1 9 ± 0.2 (Ic / I b 2) < <+0.2 1 1- 0 1 0.8 + 0.1 High cu rre n t ca p a city in co m p a ct

bt39

Contextual Info: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ M M BT3906LT1 TRANSISTOR PNP 1 .BASE 2 .EMITTER 3.COLLECTOR FEATURES Power dissipation PcM: 0.2 W (Tamb=25'C ) C ollector current ICM: -0.2 A 2.4 u_1.3 ;CoHector-base voltage ^ V(br>cbo :-40V

2SC1972

Abstract: 2SC1972 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAW ING 2 S C 1 9 7 2 is a silicon N P N epitaxial planar type transistor de­ signed for RF power amplifiers on V H F Dimensions i band m obile radio applications. 03.6 ± 0.2

2SJ439

Abstract: J439
Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 0.6 MAX. : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance

Contextual Info: SIEMENS SPD10N10 Preliminary data SPU10N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS b RDS on Package Ordering Code SPD10N10 100 V 10 A 0.2 Q P-T0252 C67078-S. SPU10N10 100 V 10 A 0.2 Q

NDC632P

Contextual Info: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -2.7A, -20V. RDS ON = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. These P-Channel logic level enhancement mode power field effect transistors are produced using

transistor J681

Abstract: 2SJ681 J681 j681 transistor tr j681
Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.)

KTB985

Abstract: KTD1347
Contextual Info: SEMICONDUCTOR KTB985 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT B D FEATURES A ・Adoption of MBIT processes. ・Low collector-to-emitter saturation voltage. P DEPTH:0.2 ・Fast switching speed.

US5U29

Contextual Info: US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 1pin mark zFeatures 1) The US5U29 combines Pch MOS FET with a

KTA1275

Abstract: KTA1275 transistor KTC3228
Contextual Info: SEMICONDUCTOR KTA1275 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR COLOR TV VERT. DEFELECTION OUTPUT APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. B D FEATURES A High Voltage : VCEO=-160V. Large Continuous Collector Current Capability. P DEPTH:0.2