TRANSISTOR P 0.2 V Search Results

smd transistor 83

Contextual Info: Transistors SMD Type P-Channel Enhancement Mode Vertical D-MOS Transistor KSP230 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 0.1max +0.05 0.90-0.05 +0.2 -0.2 Direct interface to C-MOS,TTL,etc High-speed switching +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2

720 TRANSISTOR smd sot-223

Abstract: KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd
Contextual Info: Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS th Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2

Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2

2SJ439

Abstract: J439
Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. 5.5 ± 0.2 : |Yfs| = 6.0 S (typ.) : IDSS = −100 A (max) (VDS = −16 V)

2SJ338

Abstract: 2SK2162 J338
Contextual Info: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. 0.6 MAX. 5.5 ± 0.2 5.2 ± 0.2 1.7 ± 0.2

2SJ338

Abstract: 2SK2162 J338
Contextual Info: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 0.7 S typ. 5.5 ± 0.2 : VDSS = −180 V 1.2 MAX. z High breakdown voltage

Contextual Info: IC MOS FET SMD Type SIPMOS Small-Signal-Transistor BSP613P SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features P-Channel +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Enhancement mode 4 Avalanche rated dv/dt rated Ideal for fast switching buck converter

j668

Abstract: 2SJ668
Contextual Info: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 z 4 V gate drive 0.6 MAX. 5.5 ± 0.2 1.2 MAX. z High forward transfer admittance: |Yfs| = 5.0 S (typ.)

SMD 8A TRANSISTOR

Abstract: transistor SMD 8A smd transistor 8A FDB4020P KDB4020P
Contextual Info: MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P FDB4020P TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High density cell design for extremely low RDS(on).

CHM3U22VESGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 30 Volts CHM3U22VESGP CURRENT 0.2 Ampere CURRENT 0.2 Ampere APPLICATION * High speed switching , Analog switching SOT-563

j668

Abstract: 2SJ668
Contextual Info: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 z 4 V gate drive 5.5 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)

Diode T148

Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2

SSM3J312T

Contextual Info: SSM3J312T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J312T High Speed Switching Applications Power Management Switch Applications Unit: mm +0.2 2.8-0.3 • Low on-resistance: +0.2 1.6-0.1 Ron = 237mΩ max (@VGS = −1.8 V) 0.4±0.1 1.8V drive

NEC 2581

Abstract: nec 2405 2405 nec 09640
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance PACKAGE DIMENSIONS in millimeters 2 . 8 ± 0.2 Cre = 0 .3 p F T Y P .

transistor J681

Abstract: 2sj681 J681 j681 transistor
Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)

XC9128B45

Contextual Info: XC9128/XC9129 Series ETR0411-005 1A Driver Transistor Built-In, Step-Up DC/DC Converters •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a synchronous 0.2Ω (TYP.) P-channel switching transistor built-in. A highly efficient and stable current can be supplied up to

Contextual Info: XC9128/XC9129 Series ETR0411-003 1A Driver Transistor Built-In, Step-Up DC/DC Converters •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a synchronous 0.2Ω (TYP.) P-channel switching transistor built-in. A highly efficient and stable current can be supplied up to

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ324,324-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ324 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ327,327-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ327 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2

326-Z

Abstract: MARK 326
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ326,326-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ326 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2

transistor 2sc1972

Abstract: 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on VHF band mobile radio applications. Dimensions in mm 03.6 ± 0.2

2SJ377

Abstract: J377
Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 4.0 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.16 Ω (typ.)

Contextual Info: NPN Photo Transistor TPS608A «> A p p lica tio n s • Photo Interrupter • Photoelectric Counter 1 -0 4 4 • Position and Rotational Speed Sensor - ¿ 0.2 5 + 0 3 2 .4 +. 0.3 - 0.2 r— • Automatic Control Unit " T Featu res - 1.5 • Fast Response Speed

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 • High forward transfer admittance: |Yfs| = 18 S (typ.) • Low leakage current: IDSS = −100 A (VDS = −250 V)