TRANSISTOR NPN 1A COLLECTOR CURRENT Search Results
TRANSISTOR NPN 1A COLLECTOR CURRENT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
TRANSISTOR NPN 1A COLLECTOR CURRENT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
transistor A2
Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
|
Original |
ZXTNS618MC 150mV 500mV DS31933 transistor A2 Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual | |
IC 630Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • |
Original |
ZXTC6717MC 100mV -140mV DS31926 IC 630 | |
Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω) |
Original |
TIP112 O-220 QW-R203-022 | |
UTCTIP112
Abstract: QW-R203-022
|
Original |
TIP112 R110k, O-220 QW-R203-022 UTCTIP112 | |
KSB811
Abstract: KSD1021
|
Original |
KSD1021 KSB811 350mW KSB811 KSD1021 | |
Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR |
Original |
2N6718 2N6718 850mW QW-R201-056 100ms | |
IC 630Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A |
Original |
ZXTC6719MC 100mV -220mV DS31928 IC 630 | |
2N6718Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR |
Original |
2N6718 2N6718 850mW QW-R201-056 | |
DFN3020Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A |
Original |
ZXTC6720MC 185mV -220mV DS31929 DFN3020 | |
KSB564A
Abstract: KSD471A
|
OCR Scan |
KSD471A KSB564A 800mW 100MA, 100mA -10mA KSB564A KSD471A | |
2sc2233
Abstract: Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor
|
Original |
2SC2233 500mA; 2sc2233 Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor | |
NPN Transistor 1A 400V
Abstract: NPN Transistor TO220 vcc 150V
|
Original |
TIP47/48/49/50 O-220 TIP47 TIP48 TIP49 TIP50 NPN Transistor 1A 400V NPN Transistor TO220 vcc 150V | |
2SD2583
Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
|
Original |
2SD2583 2SD2583 Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN | |
transistor Ic 1A datasheet NPN
Abstract: 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V
|
Original |
2SB679 transistor Ic 1A datasheet NPN 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V | |
|
|||
IC 630
Abstract: marking DA1
|
Original |
ZXTC6717MC 100mV -140mV DS31926 IC 630 marking DA1 | |
KSD471A
Abstract: KSB564A
|
Original |
KSD471A KSB564A 800mW 01-Jun-2007 KSD471A KSB564A | |
PZT3019Contextual Info: PZT3019 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. REF. A C D E I H 3 0 1 9 |
Original |
PZT3019 OT-223 PZT3019 01-Jun-2002 150mA 500mA 1000mA 100MHz | |
Marking 1AContextual Info: UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) |
Original |
MMBT3904 350mW MMBT3906 OT-23 QW-R206-012 Marking 1A | |
Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4378 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● Collector Power Dissipation: PC=500mW 2.50±0.1 4.00±0.1 ● Collector Current: IC=1A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 |
Original |
KTC4378 OT-89 500mW 500mA, | |
0/transistor smd ZR 55Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTD1898 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=1A 0.53±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 |
Original |
KTD1898 OT-89 500mW 500mA 500mA, 0/transistor smd ZR 55 | |
Contextual Info: BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage |
Original |
BCP56 OT-223 BCP53 BCP56-16 150mA 500mA 500mA, 380us, | |
tip50
Abstract: tip49 TIP47 tip48
|
Original |
TIP47/TIP48/TIP49/TIP50 O-220 TIP47 TIP48 TIP49 TIP50 tip50 tip49 TIP47 tip48 | |
BCP53
Abstract: BCP56 BCP56-10 BCP56-16 NPN 1A 100V SOT-223
|
Original |
BCP56 OT-223 BCP53 BCP56-10 BCP56-16 150mA 500mA 500mA, BCP53 BCP56 BCP56-10 BCP56-16 NPN 1A 100V SOT-223 | |
Contextual Info: BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage |
Original |
BCP56 OT-223 BCP53 BCP56-16 150mA 500mA 500mA, 380us, |