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    TRANSISTOR NPN 1A COLLECTOR CURRENT Search Results

    TRANSISTOR NPN 1A COLLECTOR CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1D120603MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN PDF
    MGN1D050603MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 5-6/-3V GAN PDF
    MGN1S0512MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN PDF
    MGN1S1212MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN PDF
    MGN1S1208MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN PDF

    TRANSISTOR NPN 1A COLLECTOR CURRENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor A2

    Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
    Contextual Info: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A


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    ZXTNS618MC 150mV 500mV DS31933 transistor A2 Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual PDF

    IC 630

    Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


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    ZXTC6717MC 100mV -140mV DS31926 IC 630 PDF

    Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)


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    TIP112 O-220 QW-R203-022 PDF

    UTCTIP112

    Abstract: QW-R203-022
    Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)


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    TIP112 R110k, O-220 QW-R203-022 UTCTIP112 PDF

    KSB811

    Abstract: KSD1021
    Contextual Info: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage


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    KSD1021 KSB811 350mW KSB811 KSD1021 PDF

    Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR


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    2N6718 2N6718 850mW QW-R201-056 100ms PDF

    IC 630

    Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


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    ZXTC6719MC 100mV -220mV DS31928 IC 630 PDF

    2N6718

    Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR


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    2N6718 2N6718 850mW QW-R201-056 PDF

    DFN3020

    Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A


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    ZXTC6720MC 185mV -220mV DS31929 DFN3020 PDF

    KSB564A

    Abstract: KSD471A
    Contextual Info: KSD471A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB564A • Collector Current Ic = 1A • Collector Dissipation Pc = 800mW JEDEC TO-92 Unit: mm ABSOLUTE MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    KSD471A KSB564A 800mW 100MA, 100mA -10mA KSB564A KSD471A PDF

    2sc2233

    Abstract: Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION •Collector-Emitter Breakdown Voltage:VCEO= 60V Min ·DC Current Gain: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation


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    2SC2233 500mA; 2sc2233 Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor PDF

    NPN Transistor 1A 400V

    Abstract: NPN Transistor TO220 vcc 150V
    Contextual Info: TIP47/48/49/50 NPN SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE VCEO(sus : 250 to 400V) 1A RATED COLLECTOR CURRENT TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage :TIP47 :TIP48 :TIP49 :TIP50 Collector Emitter Voltage : TIP47


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    TIP47/48/49/50 O-220 TIP47 TIP48 TIP49 TIP50 NPN Transistor 1A 400V NPN Transistor TO220 vcc 150V PDF

    2SD2583

    Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS


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    2SD2583 2SD2583 Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN PDF

    transistor Ic 1A datasheet NPN

    Abstract: 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A


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    2SB679 transistor Ic 1A datasheet NPN 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V PDF

    IC 630

    Abstract: marking DA1
    Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance


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    ZXTC6717MC 100mV -140mV DS31926 IC 630 marking DA1 PDF

    KSD471A

    Abstract: KSB564A
    Contextual Info: KSD471A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55 ±0.2 14.3 ±0.2 4.5 ±0.2 FEATURES z Complement to KSB564A z Collector Current : IC = 1A z Collector Dissipation : PC = 800mW


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    KSD471A KSB564A 800mW 01-Jun-2007 KSD471A KSB564A PDF

    PZT3019

    Contextual Info: PZT3019 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. REF. A C D E I H 3 0 1 9


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    PZT3019 OT-223 PZT3019 01-Jun-2002 150mA 500mA 1000mA 100MHz PDF

    Marking 1A

    Contextual Info: UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


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    MMBT3904 350mW MMBT3906 OT-23 QW-R206-012 Marking 1A PDF

    Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4378 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● Collector Power Dissipation: PC=500mW 2.50±0.1 4.00±0.1 ● Collector Current: IC=1A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1


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    KTC4378 OT-89 500mW 500mA, PDF

    0/transistor smd ZR 55

    Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTD1898 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=1A 0.53±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1


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    KTD1898 OT-89 500mW 500mA 500mA, 0/transistor smd ZR 55 PDF

    Contextual Info: BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage


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    BCP56 OT-223 BCP53 BCP56-16 150mA 500mA 500mA, 380us, PDF

    tip50

    Abstract: tip49 TIP47 tip48
    Contextual Info: TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor • High Voltage and Switching Applications • High Sustaining Voltage : VCEO sus = 250 - 400V • 1A Rated Collector Current TO-220 1 1.Base Absolute Maximum Ratings* 2.Collector 3.Emitter Ta = 25°C unless otherwise noted


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    TIP47/TIP48/TIP49/TIP50 O-220 TIP47 TIP48 TIP49 TIP50 tip50 tip49 TIP47 tip48 PDF

    BCP53

    Abstract: BCP56 BCP56-10 BCP56-16 NPN 1A 100V SOT-223
    Contextual Info: BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage


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    BCP56 OT-223 BCP53 BCP56-10 BCP56-16 150mA 500mA 500mA, BCP53 BCP56 BCP56-10 BCP56-16 NPN 1A 100V SOT-223 PDF

    Contextual Info: BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage


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    BCP56 OT-223 BCP53 BCP56-16 150mA 500mA 500mA, 380us, PDF