TRANSISTOR NPN 1A COLLECTOR CURRENT Search Results

transistor A2

Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
Contextual Info: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

UTCTIP112

Abstract: QW-R203-022
Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

KSB811

Abstract: KSD1021
Contextual Info: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A

2N6718

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR

DFN3020

Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A

KSB564A

Abstract: KSD471A
Contextual Info: KSD471A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB564A • Collector Current Ic = 1A • Collector Dissipation Pc = 800mW JEDEC TO-92 Unit: mm ABSOLUTE MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage

2sc2233

Abstract: Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION •Collector-Emitter Breakdown Voltage:VCEO= 60V Min ·DC Current Gain: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation

NPN Transistor 1A 400V

Abstract: NPN Transistor TO220 vcc 150V
Contextual Info: TIP47/48/49/50 NPN SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE VCEO(sus : 250 to 400V) 1A RATED COLLECTOR CURRENT TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage :TIP47 :TIP48 :TIP49 :TIP50 Collector Emitter Voltage : TIP47

2SD2583

Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS

transistor Ic 1A datasheet NPN

Abstract: 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A

IC 630

Abstract: marking DA1
Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance

KSD471A

Abstract: KSB564A
Contextual Info: KSD471A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55 ±0.2 14.3 ±0.2 4.5 ±0.2 FEATURES z Complement to KSB564A z Collector Current : IC = 1A z Collector Dissipation : PC = 800mW

PZT3019

Contextual Info: PZT3019 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. REF. A C D E I H 3 0 1 9

Marking 1A

Contextual Info: UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4378 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● Collector Power Dissipation: PC=500mW 2.50±0.1 4.00±0.1 ● Collector Current: IC=1A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1

0/transistor smd ZR 55

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTD1898 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=1A 0.53±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1

Contextual Info: BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage

tip50

Abstract: tip49 TIP47 tip48
Contextual Info: TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor • High Voltage and Switching Applications • High Sustaining Voltage : VCEO sus = 250 - 400V • 1A Rated Collector Current TO-220 1 1.Base Absolute Maximum Ratings* 2.Collector 3.Emitter Ta = 25°C unless otherwise noted

BCP53

Abstract: BCP56 BCP56-10 BCP56-16 NPN 1A 100V SOT-223
Contextual Info: BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage

Contextual Info: BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage