TRANSISTOR NPN 1A COLLECTOR CURRENT Search Results

transistor A2

Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
Contextual Info: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A

5609 transistor

Abstract: transistor 5609 TRANSISTOR-5609 5609 npn transistor 5609 npn 5609 a/TRANSISTOR-5609
Contextual Info: 5609 YOUDA TRANSISTOR Si NPN TRANSISTOR—5609 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 25V *Collector current up to 1A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current tc*1A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATINGS TA=25'C Sym bol C haracteristic Collector-Base Voltage Collector-Em itler Voltage

mps3569

Abstract: ebc Transistor
Contextual Info: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage

QS 100 NPN Transistor

Abstract: KSB564A KSD471A
Contextual Info: KSD471A NPN Epitaxial Silicon Transistor Features • Audio Frequency Power Amplifier • Complement to KSB564A • Collector Current : IC=1A • Collector Power Dissipation : PC=800mW TO-92 1 • Suffix "-C" means Center Collector 1. Emitter 2. Collector 3. Base

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

UTCTIP112

Abstract: QW-R203-022
Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

KSB811

Abstract: KSD1021
Contextual Info: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A

DFN3020

Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A

KSB564A

Abstract: KSD471A
Contextual Info: KSD471A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB564A • Collector Current Ic = 1A • Collector Dissipation Pc = 800mW JEDEC TO-92 Unit: mm ABSOLUTE MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage

2sc2233

Abstract: Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION •Collector-Emitter Breakdown Voltage:VCEO= 60V Min ·DC Current Gain: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation

NPN Transistor 1A 400V

Abstract: NPN Transistor TO220 vcc 150V
Contextual Info: TIP47/48/49/50 NPN SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE VCEO(sus : 250 to 400V) 1A RATED COLLECTOR CURRENT TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage :TIP47 :TIP48 :TIP49 :TIP50 Collector Emitter Voltage : TIP47

2SD2583

Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. KSD471C SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER Package: TO-92 *Complementary to KSB564C *Collector Current Ic=1A *Collector Dissipation Pc=800mW ABSOLUTE MAXIMUM RATINGS at Tamb=250C

KSB811

Abstract: KSD1021
Contextual Info: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSB811

Contextual Info: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSB811

Abstract: KSD1021
Contextual Info: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted