KSD1021 Search Results
KSD1021 Datasheets (16)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| KSD1021 | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 103.17KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021 | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 40.32KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021 | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR | Original | 64.03KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 104.59KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 39.31KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021G | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 40.33KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021G | Fairchild Semiconductor | TRANS GP BJT NPN 30V 1A 3TO-92S | Original | 40.97KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021GBU | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 40.96KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021GTA | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 40.96KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021O | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 40.33KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021OBU | Fairchild Semiconductor | TRANS GP BJT NPN 30V 1A 3TO-92S | Original | 40.97KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021OTA | Fairchild Semiconductor | TRANS GP BJT NPN 30V 1A 3TO-92S | Original | 40.97KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021Y | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 40.33KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021Y | Fairchild Semiconductor | TRANS GP BJT NPN 30V 1A 3TO-92S | Original | 40.97KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021YBU | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 40.96KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KSD1021YTA | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 40.96KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
KSD1021 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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KSB811
Abstract: KSD1021
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ksb811ksd1021350mwo-92s | |
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Contextual Info: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current tc*1A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATINGS TA=25'C Sym bol C haracteristic Collector-Base Voltage Collector-Em itler Voltage |
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ksd1021ksb811350mw | |
transistor ic1A
Abstract: KSD1021 KSB811
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ksd1021ksb811350mw100ma+1 | |
KSB811
Abstract: KSD1021
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ksb811ksd1021350mwo-92s | |
KSB811
Abstract: KSD1021
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ksd1021ksb811350mwo-92s | |
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Contextual Info: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to K S B811 • C ollector C urrent |c=1 A • C ollector D issipation P c=350m W ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Rating Unit V V Col lector-Base Voltage |
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ksd1021 | |
KSB811
Abstract: KSD1021
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ksb811o-92sksd1021350mw+2 | |
KSB811
Abstract: KSD1021
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ksd1021ksb811350mw | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KSB811 TRANSISTOR PNP 1. EMITTER FEATURES z Complement to KSD1021 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter |
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o-92sksb811ksd1021-10ma | |
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Contextual Info: KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current : IC= -1A • Collector Power Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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ksb811ksd1021350mwo-92s | |
B34 transistor
Abstract: t25E S03 pnp KSB811 KSD1021
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ksb811ksd1021350inwo-92s+7 | |
KSB811Contextual Info: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSD1021 • Collector Current: IC= -1A • Collector Dissipation: PC=350mW ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG |
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ksb811ksd1021350mwo-92s | |
TRANSISTOR a43
Abstract: KSB811 KSD1021
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OCR Scan |
00dfcksb811ksd1021350mw+3 | |
KSB811Contextual Info: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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ksd1021ksb811350mwo-92s | |
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Contextual Info: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSD1021 • Collector Current lc= -1A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATING Ta*25X: C h aracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage |
OCR Scan |
ksb811ksd1021350mw | |
KSB811
Abstract: KSD1021
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ksd1021ksb811350mwo-92s | |
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Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) |
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0q11524ot-23kst1009f2kst1009f3+6 | |
BD53A
Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
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OCR Scan |
ot-23ksc2223ksc2715ksc1623+11 | |
transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
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ot-23kst06kst05ksc1623+16 | |
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
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thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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uf4003uf4004uf4005uf4006+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5ke100a5ke100ca5ke10a5ke10ca+16 | |
ksd 250v 10a
Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
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OCR Scan |
ot-23ksc2223ksc2715ksc1674+13 | |
ksd 168
Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
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OCR Scan |
ksa473ksa539ksa542ksa614+16 | |