DFN3020 Search Results

DFN2020

Abstract: DMS2120LFWB power diode package DFN3020 632 diode DMP2160UFDB
Contextual Info: New Product Announcement MOSFET solutions save space and improve performance The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement mode MOSFET with a companion diode in a choice of 2mmx2mm DFN2020 and 3mmx2mm DFN3020 packages. The DMP2160UFDB, copackages two of the same

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTD618MC DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current

DMS2120LFWB

Abstract: DFN3020B-8 DMS2120LFWB-7 J-STD-020D
Contextual Info: DMS2120LFWB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V

DFN3020B-8

Abstract: 2.7A SOT23-6
Contextual Info: A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max Device RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) Q1 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V

AA112A

Abstract: IPC-7351A
Contextual Info: PACKAGE OUTLINE DIMENSIONS AP02002 SUGGESTED PAD LAYOUT(AP02001) (Based on IPC-7351A) Table of Contents X4-DFN0402‐2/SWP . 10

ZXTC6719MCTA

Contextual Info: DATE: 20th December, 2010 PCN #: 2029 PCN Title: Package End of Life for the MLP322 and MLP832 Packages Dear Customer: This is an announcement of change s to products that are currently being

DFN2015H4-6

Abstract: DFN3020H4-6
Contextual Info: AH1822 MICROPOWER OMNIPOLAR HALL-EFFECT SENSOR SWITCH General Description Features • • • • • • • • • Micropower operation Operation with magnetic field of either north or south pole omnipolar 2.5V to 5.5V battery operation Chopper stabilized

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

DFN3020B-8

Abstract: ZXTPS718MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -20V • RSAT = 64mΩ

Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A

ZXTD618MC

Contextual Info: A Product Line of Diodes Incorporated ZXTD618MC DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current

Contextual Info: AH1822 MICROPOWER OMNIPOLAR HALL-EFFECT SENSOR SWITCH General Description Features • • • • • • • • • AH1822 is comprised of two Hall effect plates and an open-drain output driver, mainly designed for battery-operation, hand-held equipment such as Cellular and Cordless Phone, PDA . The

Contextual Info: A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max Device RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) Q1 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

DMS2120LFWB

Contextual Info: DMS2120LFWB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V

Diodes Marking K7

Contextual Info: AH1822 MICROPOWER OMNIPOLAR HALL-EFFECT SENSOR SWITCH General Description Features • • • • • • • • • Micropower operation Operation with magnetic field of either north or south pole omnipolar 2.5V to 5.5V battery operation Chopper stabilized

DFN3020B-8

Abstract: ZXTD617MC ZXTD617MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTD617MC DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 15V RSAT = 45 mΩ IC = 4.5A Continuous Collector Current Low Equivalent On Resistance

DFN3020B-8

Abstract: ZXTC6719MC ZXTC6720MC ZXTC6720MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 80V • RSAT = 68 mΩ • IC = 3.5A PNP Transistor

ZXTD717MC

Abstract: DFN3020B-8 ZXTD717MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTD717MC DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • VCEO = -12V RSAT = 60 mΩ IC = -4A Continuous Collector Current Low Equivalent On Resistance

DFN3020B-8

Contextual Info: A Product Line of Diodes Incorporated ZXTPS720MC 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -40V • RSAT = 104mΩ

DFN3020B-8

Abstract: ZXTPS717MC DS3193
Contextual Info: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -12V • RSAT = 65mΩ

ZXTC6718MCTA

Abstract: DFN3020B-8 ZXTC6718MC marking db2 peak hold ic
Contextual Info: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR Features Mechanical Data • • • • • • • • • • • NPN Transistor ƒ VCEO =20 ƒ RSAT = 47 mΩ ƒ IC = 4.5A PNP Transistor ƒ VCEO = -20V ƒ

DFN3020B-8

Abstract: Marking G2 SOT23-6
Contextual Info: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V