TRANSISTOR MW 131 Search Results

2SC5454

Abstract: ic n 3856
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • High gain, low noise +0.2 Emitter to Base Voltage VEBO 2 V Collector Current IC 50 mA Total Power Dissipation PT 200 mW

Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available

AN569

Abstract: MMBT2131T1 MMBT2131T1G 318F
Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available

2SC5752

Abstract: 2SC5752-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

nec japan 7812

Abstract: NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm

NSL12AW

Abstract: NSL12AWT1 NSL12AWT1G
Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)

p1565

Abstract: 2SC5751
Contextual Info: NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm

ne678m04-a

Abstract: 2SC5753
Contextual Info: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

2SC5753

Abstract: nec k 813 2SC5753-T2 p1565 RF transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

nec 14305

Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm

MMBT2132T3

Abstract: 318F AN569 MMBT2132T3G
Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage

Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage

NL6EBX-DC12V

Abstract: MBB relay DC48V NL6EBX-DC110V NL6EBX-DC24V NL6EBX-DC48V NL6EBX-DC60V NL6EBX-L2-DC110V NL6EBX-L2-DC12V NL6EBX-L2-DC24V
Contextual Info: 6PDT FLATPACK 2AMP DIL RELAY NL-RELAYS FEATURES 32.4 1.276 • Space saving dimensions — 25.4 mm x 32.4 mm × 10.9 mm 1.000 inch× 1.276 inch× 0.429 inch • Latching types available • Low operating power — 400 mW single side stable Transistor compatible

NL6EBX-DC12V

Abstract: MBB relay NL6EBX-L2-DC12V DC48V NL6EBX-DC110V NL6EBX-DC24V NL6EBX-DC48V NL6EBX-DC60V NL6EBX-L2-DC110V NL6EBX-L2-DC24V
Contextual Info: 6PDT FLATPACK 2AMP DIL RELAY NL-RELAYS FEATURES 32.4 1.276 • Space saving dimensions — 25.4 mm x 32.4 mm × 10.9 mm 1.000 inch× 1.276 inch× 0.429 inch • Latching types available • Low operating power — 400 mW single side stable Transistor compatible

Contextual Info: BSL606SN OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 95 ID 4.5 A • Avalanche rated • Qualified according to AEC Q101 PG-TSOP-6

diode D32-02

Abstract: DIODE D32 -02 diode D32 BSS606N marking KE SOT-89
Contextual Info: BSS606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 3.2 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT-89

BSR606N

Abstract: BSR606N H6327
Contextual Info: BSR606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SC59

2SC1600

Abstract: ne57500 NE57510
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH OSCILLATOR OUTPUT POWER : 700 mW at 1.7 GHz The NE575 series of NPN silicon medium power transistors is designed to operate in amplifiers and oscillators up to 2 GHz with supply voltages up to 18 volts. Transistors in this series

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

Contextual Info: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

IPB180P04

Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4
Contextual Info: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

IPB160N04S4-02D

Abstract: 4N0402D MJ10050 D160A 4N0402 73 marking
Contextual Info: IPB160N04S4-02D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 1.9 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (ELV compliant 100% lead free)

4N0402

Abstract: 4n0403 4N0402D IPB100N04S4 IPI100N04S4-03D 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D
Contextual Info: IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.2 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow

2SC1593

Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is