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    TRANSISTOR MW 131 Search Results

    TRANSISTOR MW 131 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR MW 131 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC5454

    Abstract: ic n 3856
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • High gain, low noise +0.2 Emitter to Base Voltage VEBO 2 V Collector Current IC 50 mA Total Power Dissipation PT 200 mW


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    2SC5454 2SC5454 ic n 3856 PDF

    Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available


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    MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D PDF

    AN569

    Abstract: MMBT2131T1 MMBT2131T1G 318F
    Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available


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    MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D AN569 MMBT2131T1 MMBT2131T1G 318F PDF

    2SC5752

    Abstract: 2SC5752-T1
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm


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    2SC5752 2SC5752-T1 2SC5752 2SC5752-T1 PDF

    nec japan 7812

    Abstract: NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


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    2SC5750 2SC5750-T1 nec japan 7812 NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751 PDF

    NSL12AW

    Abstract: NSL12AWT1 NSL12AWT1G
    Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)


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    NSL12AW NSL12AW/D NSL12AW NSL12AWT1 NSL12AWT1G PDF

    p1565

    Abstract: 2SC5751
    Contextual Info: NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


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    NE677M04 2SC5751 NE677M04-A 2SC5751-A NE677M04-T2-A 2SC5751-T2-A P15657EJ1V0DS p1565 2SC5751 PDF

    ne678m04-a

    Abstract: 2SC5753
    Contextual Info: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm


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    NE678M04 2SC5753 NE678M04-A 2SC5753-A NE678M04-T2-A 2SC5753-T2-A P15659EJ1V0DS 2SC5753 PDF

    2SC5753

    Abstract: nec k 813 2SC5753-T2 p1565 RF transistor
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm


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    2SC5753 2SC5753-T2 2SC5753 nec k 813 2SC5753-T2 p1565 RF transistor PDF

    nec 14305

    Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


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    2SC5751 2SC5751-T2 nec 14305 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751 PDF

    MMBT2132T3

    Abstract: 318F AN569 MMBT2132T3G
    Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage


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    MMBT2132T3 MMBT2132T1/D MMBT2132T3 318F AN569 MMBT2132T3G PDF

    Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage


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    MMBT2132T3 MMBT2132T1/D PDF

    NL6EBX-DC12V

    Abstract: MBB relay DC48V NL6EBX-DC110V NL6EBX-DC24V NL6EBX-DC48V NL6EBX-DC60V NL6EBX-L2-DC110V NL6EBX-L2-DC12V NL6EBX-L2-DC24V
    Contextual Info: 6PDT FLATPACK 2AMP DIL RELAY NL-RELAYS FEATURES 32.4 1.276 • Space saving dimensions — 25.4 mm x 32.4 mm × 10.9 mm 1.000 inch× 1.276 inch× 0.429 inch • Latching types available • Low operating power — 400 mW single side stable Transistor compatible


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    PDF

    NL6EBX-DC12V

    Abstract: MBB relay NL6EBX-L2-DC12V DC48V NL6EBX-DC110V NL6EBX-DC24V NL6EBX-DC48V NL6EBX-DC60V NL6EBX-L2-DC110V NL6EBX-L2-DC24V
    Contextual Info: 6PDT FLATPACK 2AMP DIL RELAY NL-RELAYS FEATURES 32.4 1.276 • Space saving dimensions — 25.4 mm x 32.4 mm × 10.9 mm 1.000 inch× 1.276 inch× 0.429 inch • Latching types available • Low operating power — 400 mW single side stable Transistor compatible


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    PDF

    Contextual Info: BSL606SN OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 95 ID 4.5 A • Avalanche rated • Qualified according to AEC Q101 PG-TSOP-6


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    BSL606SN H6327: PDF

    diode D32-02

    Abstract: DIODE D32 -02 diode D32 BSS606N marking KE SOT-89
    Contextual Info: BSS606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 3.2 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT-89


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    BSS606N PG-SOT-89 H6327: diode D32-02 DIODE D32 -02 diode D32 BSS606N marking KE SOT-89 PDF

    BSR606N

    Abstract: BSR606N H6327
    Contextual Info: BSR606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SC59


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    BSR606N PG-SC59 H6327: BSR606N BSR606N H6327 PDF

    2SC1600

    Abstract: ne57500 NE57510
    Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH OSCILLATOR OUTPUT POWER : 700 mW at 1.7 GHz The NE575 series of NPN silicon medium power transistors is designed to operate in amplifiers and oscillators up to 2 GHz with supply voltages up to 18 volts. Transistors in this series


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    NE57500 NE57510 NE575 b42752S 00b5b43 NE57500, 2SC1600 NE57510 PDF

    NEC 41-A 002

    Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
    Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for


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    b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353 PDF

    Contextual Info: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) PDF

    IPB180P04

    Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4
    Contextual Info: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) IPB180P04 ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4 PDF

    IPB160N04S4-02D

    Abstract: 4N0402D MJ10050 D160A 4N0402 73 marking
    Contextual Info: IPB160N04S4-02D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 1.9 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (ELV compliant 100% lead free)


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    IPB160N04S4-02D PG-TO263-7-3 4N0402D IPB160N04S4-02D 4N0402D MJ10050 D160A 4N0402 73 marking PDF

    4N0402

    Abstract: 4n0403 4N0402D IPB100N04S4 IPI100N04S4-03D 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D
    Contextual Info: IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.2 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


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    IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI100N04S4-03D 4N0402 4n0403 4N0402D IPB100N04S4 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D PDF

    2SC1593

    Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
    Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is


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    b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189 PDF