ne678m04-a
Abstract: 2SC5753
Contextual Info: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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2SC5753
Abstract: nec k 813 2SC5753-T2 p1565 RF transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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2sc57532sc5753-t2nec k 813p1565+1rf transistor
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mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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g0706px10020ej41v0pfmobile phone basic block diagrampg2158t5k+82sc3357/ne85634microwave duplexerne5510279aupc8236ne3517s03upg2156ne662m04sw spdt
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IC pt 2262
Abstract: ic 14820 13008 TRANSISTOR 2SC5753 NE678M04 NE678M04-T2 S21E 3210 sot343 ic nec 2051 msg 4713
Contextual Info: MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55 1 The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is
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ne678m04ic pt 2262ic 1482013008 transistor+62sc5753ne678m04-t2s21e3210 sot343ic nec 2051msg 4713
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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g0706px10727ej02v0pfnec mosfet marked v75nec ga fet marking code t79+8fet marking code g5dmarking code c1g mmiclga 1155 pin diagrampb1507marking code c1e mmicmarking code c1h mmicpc8230tummic sot 363 marking code 77
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861
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NE664M04
Abstract: 2SC5753
Contextual Info: PRELIMINARY DATA SHEET MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE678M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55
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ne678m04ot-343ne664m04ne678m04-t2+208cm22sc5753
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SMD M05 sot23
Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly
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2013/4msmd m05 sot23ne5531ne352+4a3 smd sot-343transistor smd m05smd transistor m05transistor smd code 404
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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pu10015ej04v0pftransistor marking t79 ghzmarking code c1h mmicmarking code c3e sot-89+7upb1507marking code c1g mmicmarking code c1e mmicdata book transistors 2saupc2712pc3215transistor 2sa data book
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2SC5753
Abstract: 2SC5753-T2
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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TRANSISTOR R57
Abstract: 2SC5754-T2 transistor marking R57 ghz 2SC5434 2SC5509 2SC5753 2SC5754 DCS1800 GSM1800 NE5520379A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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pu10008ej02v0ds2sc5754transistor r572sc5754-t2+7transistor marking r57 ghz2sc54342sc55092sc5753dcs1800gsm1800ne5520379a
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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p14740ee5v0pf00marking code c1e smd transistortransistor smd marking code s01fmcw radar+7transistor smd c1yne92039g2b 6-pin smdne582m03ne3210so1smd transistor g1-lsmd code marking nec 817
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transistor marking R57 ghz
Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
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2sc57542sc5754-t2pu10008ej02v0dstransistor marking r57 ghz+6transistor r572sc54342sc55092sc5753dcs1800gsm1800
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j 6815 transistor
Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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bb 509 varicap diodeblf6g22lon503tea6849+6bf1107 spice modelpin diode ads modelultra fast diodes sanyo catalogrf manualdiode varicap bb 112adi cmos bipolar sige
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TRANSISTOR J 6815 EQUIVALENT
Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
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2sc57542sc5754-t2transistor j 6815 equivalentnec k 813+6dcs1800gsm1800ne5520379a2sc54342sc55092sc5753
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mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.
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ir260/ws260/hs350ir260/hs350mc10087f1mc-10041+8mc-10043mc-10087f1-xxxmc-10044mc-10051bf12sc56642sc5292upc1701cmc-10059
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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bgu7073bgu7072infineon power management selection guide 2011toshiba car audio catalog 2015+6bap50-03 spice modelbb 804 varicap diodemosfet toshiba 2015rf manual 19th editionrf manualblf188
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2SC5753-T2
Abstract: nec k 813 zo 607 2SC5753
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TRANSISTOR R57
Abstract: MA3005 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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1658 NEC
Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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px10020ej08v0pf1658 necsw spdtfrs transceiver+7sw-spdtupc8112tb2sc5288ne52418rf basicsne5510279adiscrete lna d
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UPC8236
Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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g0706px10020ej39v0pfupc82362sc5508+8ne3512s02digital tv tunerhjfetnesg240033sw spdtne5510279aantenna for microwave catv materialsantenna parabolic
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2SC5753
Abstract: NE678M04 NE678M04-T2-A S21E IC pt 2262 ic nec 2051
Contextual Info: NEC's MEDIUM POWER NPN NE678M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55 1 NEC's NE678M04 is fabricated using NEC's HFT3 wafer
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