TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Search Results

transistor rc4

Abstract: MMBT5179 MPS5179
Contextual Info: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common

bf282

Abstract: mps51
Contextual Info: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency

TRANSISTOR C 3223

Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
Contextual Info: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

Contextual Info: OOETTBfci MED M l A P X Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 1 N AMER PHIL IPS/DISCRETE h^E D PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch

npn UHF transistor 2N5179

Contextual Info: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters

Contextual Info: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

7z31

Abstract: Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • Sb E 7 13 c! ' t0 7 ' BLF242 D • 711Dfl2fci 0 0 4 3 7 6 4 47T ■ P H I N PIN CONFIGURATION High power gain Low noise Easy power control

bje 133 resistor

Contextual Info: bbSB'lBl D D S T ^ M ST? • APX Philips Semiconductors Productspecifjcatj^ VHF power MOS transistor — ^ BLF244 i FEATURES N AMER PHILIPS/] ISCRETE b*]E B PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

pulse h1251

Abstract: H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters
Contextual Info: MPSH10 I MMBTH10 & D iscrete P O W E R & S ig n a l T echnologies National S e m i c o n d u c t o r " MPSH10 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common

Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product • High gain, low noise figure fT= 13.5 GHz typ PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 - 3^dBgH 1.

MMBTSC3356

Contextual Info: MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

catv bridge amplifier

Abstract: MMBTSC3356
Contextual Info: MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

MPA92

Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Contextual Info: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

MMBTSC3356W

Abstract: uhf Low Noise transistor
Contextual Info: MMBTSC3356W NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

BLF242

Contextual Info: , One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 HF/VHF power MOS transistor FEATURES BLF242 PIN CONFIGURATION • High power gain » Low noise • Easy power control • Good thermal stability

smd transistor marking cf

Abstract: transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF
Contextual Info: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

Contextual Info: Signelic* Military Linear Products Product specification Double-balanced mixer and oscillator 602 DESCRIPTION FEATURES The 602 is a low-power VHF monolithic double-balanced mixer with input amplifier, on board oscillator, and voltage regulator. It is intended for high performance, low power

transistor Bf 444

Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324
Contextual Info: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3

MPSH10 fairchild transistor

Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

BF579

Abstract: marking GG BF579R
Contextual Info: Temic BF579/BF579R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features • High transition frequency • Low disortation 1 _EL R H ^ 2 FT 94 9280 — B 3

BFR99

Abstract: BFR99 transistor BFr pnp transistor BFy 90 transistor
Contextual Info: BFR99 SILICON PLANAR PNP WIDE BAND VHF/UHF AMPLIFIER The BFR 99 is a silicon planar epitaxial PNP transistor in Jedec T O -7 2 metal case, particu­ larly designed fo r wide band co m m o n -e m itte r linear am plifier applications up to 1 GHz. It features very high f T , very low reverse capacitance, very good cross-m odulation properties

zo 103 ma

Abstract: 2SC5247 transistor ECG 332 DSA003641
Contextual Info: 2SC5247 Silicon NPN Bipolar Transistor ADE-208-281 Z 1st. Edition Oct. 1994 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz

colpitts oscillator 400 MHz

Abstract: ASK 315MHZ ASK 434MHZ ld-sw prescaler 64 capacitor 220p SSOP-16 SSTX4915 TX4915 car alarm crystal transmitter
Contextual Info: SSTX4915 Preliminary Description The SSTX4915 is a low power ASK transmitter IC intended for applications in the North American and European VHF/UHF bands. The integrated voltage-controlled oscillator VCO , phase/frequency detector, prescaler, and reference oscillator require only the