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    TRANSISTOR MARKING T05 Search Results

    TRANSISTOR MARKING T05 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR MARKING T05 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JB TRANSISTOR SMD MARKING CODE

    Abstract: Q62702-S217
    Contextual Info: BSS 296 Infineon t« c h n o lo g t« s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^ G S th 3 = 0.8.2.0V Pin 1 VPTO5540 Pin 2 G (/> Type k> ^ D S (o n ) Package Marking 0.8 A 0.8 fl TO-92 SS 296 BSS 296 100 V


    OCR Scan     		VPTO5540 Q62702-S217 E6296 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T JB TRANSISTOR SMD MARKING CODE Q62702-S217 PDF

    k2964

    Contextual Info: TO SHIBA 2SK2964 TENTATIVE T05HIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOSVI 2 S K2 9 64 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		T05HIBA 2SK2964 VDD-24V, k2964 PDF

    transistor marking t05

    Abstract: PDTA124EU PDTC124EU
    Contextual Info: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EU FEATURES • Built-in bias resistors R1 and R2 typ. 22 k ii each • Simplification ot circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space


    OCR Scan     		PDTA124EU OT323) PDTC124EU. transistor marking t05 PDTA124EU PDTC124EU PDF

    t05 package transistor pin configuration

    Abstract: Zener diode 1N4148 ZENER 1N4148 negative temperature coefficient devices 1n4148 1n4148 die chip 1N4148 chip 1N4148 MARKING A2 1N4148 tempco 1n4148 zener diode Low Noise Zener Diode
    Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION n The LTZ1000 and LTZ1000A are ultra-stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2 VP-P of noise and long-term stability of 2μV/√kHr.


    Original     		LTZ1000/LTZ1000A LTZ1000 LTZ1000A 05ppm/ LM399 20VRMS LT1021 LT1236 t05 package transistor pin configuration Zener diode 1N4148 ZENER 1N4148 negative temperature coefficient devices 1n4148 1n4148 die chip 1N4148 chip 1N4148 MARKING A2 1N4148 tempco 1n4148 zener diode Low Noise Zener Diode PDF

    2N389

    Abstract: 2N424 l73a AAZ marking
    Contextual Info: i c | 00001B5 HIL SPECS DOOltjfll b | MIL-S-1950 0 /17 3 A 24 November 1964-_ SUPERSEDING MIL-S-19500/1 7 3 NAVY 7 April 1961 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N389 AND 2N424 This specification Is mandatory for use by all Departments and


    OCR Scan     		MIL-S-19500/173A MIL-S-I95OO/173 2N389 2N424 MIL-S-19500 T0-53) 2N424 l73a AAZ marking PDF

    zener diode 1n4148

    Abstract: diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199
    Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES n n n n n n n n DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long-Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements


    Original     		LTZ1000/LTZ1000A 05ppm/Â LTZ1000A LTZ1000 LT1236 LT1389 800nA, 10ppm/Â zener diode 1n4148 diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199 PDF

    lt0412

    Abstract: h8 diode zener LTZ1000 ltz1000 application notes diode zener 1N4148 LM199
    Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference Features Description 1.2µVP-P Noise 2µV/√kHr Long-Term Stability n Very Low Hysteresis n 0.05ppm/°C Drift n Temperature Stabilized n 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements n Specified for –55°C to 125°C Temperature Range


    Original     		LTZ1000/LTZ1000A 05ppm/ LTZ1000A LTZ1000 800nA, 10ppm/ 650nVP-P lt0412 h8 diode zener ltz1000 application notes diode zener 1N4148 LM199 PDF

    NB SOT-23 NPN

    Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
    Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to


    Original     		CH3904T CHT2222T 2SC4097 CH3904W CHT05 CHT42 CHTA42L CHT44 2SC2411K 2SC2412K NB SOT-23 NPN ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223 PDF

    CHT05GP

    Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT05GP SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)


    Original     		CHT05GP OT-23 OT-23) 500mA) CHT05GP PDF

    transistor marking t05

    Abstract: T05 sot-23 transistor t05 h 033 cht05
    Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT05PT SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)


    Original     		CHT05PT OT-23 OT-23) 500mA) transistor marking t05 T05 sot-23 transistor t05 h 033 cht05 PDF

    transistor marking t05

    Abstract: PDTC124
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA124EU PNP resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 1998 May 20 Philips Semiconductors Product specification PNP resistor-equipped transistor


    Original     		M3D102 PDTA124EU PDTA124EU MAM135 OT323) SCA60 115104/1200/02/pp8 transistor marking t05 PDTC124 PDF

    1N4148 tempco

    Abstract: ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000A LTZ1000ACH
    Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A reduces insulation requirements


    Original     		LTZ1000/LTZ1000A 05ppm/ LTZ1000A LM399 LT1021 LT1236 LT1389 800nA, 1N4148 tempco ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000ACH PDF

    LT 0206

    Abstract: 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199
    Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION • The LTZ 1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2µVP-P of noise and long term stability of 2µV/√k⎯ ⎯H⎯r.


    Original     		LTZ1000/LTZ1000A LTZ1000A 05ppm/ LTZ1000 LM199, LM399 LT1021 LT1236 LT1389 LT 0206 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199 PDF

    BGB420

    Contextual Info: Preliminary BGB420 Active Biased Transistor BGB420 Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SATTV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT-343 package


    Original     		BGB420 BGB420 OT-343 BFP420. GPS05605 PDF

    BFP540

    Abstract: Transistor BFP540 BGB540 GPS05605 T0559
    Contextual Info: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,


    Original     		D-81541 BGB540 BGB540 BFP540. GPS05605 BFP540 Transistor BFP540 GPS05605 T0559 PDF

    BFP540

    Abstract: ma 8920 BGB540 GPS05605 T513 INFINEON transistor marking s-parameter RF POWER TRANSISTOR NPN S11 INFINEON T0559 69c3
    Contextual Info: Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2002.


    Original     		BGB540, BGB540 D-81541 BGB540 BFP540. GPS05605 BFP540 ma 8920 GPS05605 T513 INFINEON transistor marking s-parameter RF POWER TRANSISTOR NPN S11 INFINEON T0559 69c3 PDF

    BR 8050

    Abstract: BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S BGB420
    Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


    Original     		BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BR 8050 BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    RF POWER TRANSISTOR NPN 3GHz

    Abstract: NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice
    Contextual Info: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , A u g . 2 0 0 1 BGB 540 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		D-81541 BGB540 BGB540 BFP540. GPS05605 RF POWER TRANSISTOR NPN 3GHz NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice PDF

    CHIP T502 S

    Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
    Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


    Original     		BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 CHIP T502 S JS 08321 BR 8050 CHIP T502 P BFP420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN PDF

    2SD882P

    Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
    Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200


    Original     		SC-62 2SD882P ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23 PDF

    ic 7912

    Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
    Contextual Info: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,


    Original     		D-81541 BGB550 10max ic 7912 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 SCT595 TRANSISTOR C 557 B transistor K 1352 PDF

    TRANSISTOR 2n697

    Abstract: 2N697S 2N696S 2N697 2N696 TRANSISTOR 2n696
    Contextual Info: The documentation and process conversion measures necessary to comply with this amendment shall be completed by 16 May, 2000. MIL-S-19500/99E AMENDMENT 3 16 February, 2000 SUPERSEDING AMENDMENT 2 15 July 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,


    Original     		MIL-S-19500/99E 2N696, 2N697, 2N696S 2N697S MIL-S-19500/99E, MIL-S-19500/99E TRANSISTOR 2n697 2N697S 2N697 2N696 TRANSISTOR 2n696 PDF

    esp 9a

    Abstract: S1300 transistor
    Contextual Info: Wfipl mLftm HEW LETT PACKARD Optical R eflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features D escription • Focused Emitter and Detector in a Single Package • T05 Package • Binning of Sensors by


    OCR Scan     		HEDS-1200 HEDS-1300 HEDS1300 esp 9a S1300 transistor PDF