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BGB540
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Infineon Technologies
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Active Biased RF Transistor |
Original |
PDF
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99.42KB |
10 |
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BGB540
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Infineon Technologies
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SPICE Parameters for the BGB540 |
Original |
PDF
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338KB |
1 |
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BGB540
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Infineon Technologies
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Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343 |
Original |
PDF
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386.37KB |
8 |
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BGB540_
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Infineon Technologies
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fT=45GHz, Icmax=80mA, SOT343 |
Original |
PDF
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386.37KB |
8 |
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BGB 540 E6327
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF ACT BIAS SOT-343 |
Original |
PDF
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103.37KB |
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BGB540E6327
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Infineon Technologies
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RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF ACT BIAS SOT-343 |
Original |
PDF
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10 |
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BGB540E6359
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Infineon Technologies
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TRANS GP BJT NPN 4.5V 0.08A 4SOT-343 T/R |
Original |
PDF
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99.43KB |
10 |
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BGB540LNA
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Infineon Technologies
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BGB540 as a 1.85 GHz Low Noise Amplifier |
Original |
PDF
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99.42KB |
6 |
