| BGB540 |
|
Infineon Technologies
|
Active Biased RF Transistor |
Original |
PDF
|
99.42KB |
10 |
| BGB540 |
|
Infineon Technologies
|
SPICE Parameters for the BGB540 |
Original |
PDF
|
338KB |
1 |
| BGB540 |
|
Infineon Technologies
|
Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343 |
Original |
PDF
|
386.37KB |
8 |
| BGB540_ |
|
Infineon Technologies
|
fT=45GHz, Icmax=80mA, SOT343 |
Original |
PDF
|
386.37KB |
8 |
| BGB 540 E6327 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF ACT BIAS SOT-343 |
Original |
PDF
|
103.37KB |
|
| BGB540E6327 |
|
Infineon Technologies
|
RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF ACT BIAS SOT-343 |
Original |
PDF
|
|
10 |
| BGB540E6359 |
|
Infineon Technologies
|
TRANS GP BJT NPN 4.5V 0.08A 4SOT-343 T/R |
Original |
PDF
|
99.43KB |
10 |
| BGB540LNA |
|
Infineon Technologies
|
BGB540 as a 1.85 GHz Low Noise Amplifier |
Original |
PDF
|
99.42KB |
6 |
