TRANSISTOR MARKING S00 Search Results

Contextual Info: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Type ^DS BSS 125 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 0.1 A ffDS(on) Package Marking 45 £1 TO-92 SS125

ss125 transistor

Abstract: ss125
Contextual Info: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode •^GS th = 1-5 -2 .5 V Type b 0.1 A BSS 125 ^DS 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 ffDS(on) Package Marking 45 Q TO-92

Q67000-S007

Abstract: E6327 marking BSs marking sSH sot-23
Contextual Info: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information

marking sSH sot-23

Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information

marking sSH sot-23

Abstract: E6327 Q67000-S007 marking 119 marking BSs
Contextual Info: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information

Q67000-S007

Abstract: bss 108 E6327 SOT23 marking GF marking BSs BSS119
Contextual Info: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information

ss125 transistor

Abstract: bss125 SS125 Q67000-S008
Contextual Info: SIEMENS BSS125 SIPMOS • Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 V Type VDS to BSS 125 600 V 0.1 A Type BSS 125 BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S505 Q62702-S021 Q67000-S008 Q67000-S233 ^DS(on) 45 Q

siemens bss100

Abstract: BSS100 BSS100 TO-92 BSS100 Siemens
Contextual Info: SIEMENS BSS 100 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0 .8 .2 .0 V Type (O £ BSS 100 100 V Type BSS 100 BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S483 Q62702-S499 Q62702-S007 Q67000-S206 b

NEC K 2500

Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

transistor smd code marking 404

Abstract: transistor smd code 404
Contextual Info: BSS 119 In fin e o n technologies SIPMOS Small-Signal Transistor h • N channel i /V • Enhancement mode • ^ G S (th 2 = 1-6 .2.6 V 1 Pin 2 Pin 1 VqS BSS 119 100 V Type BSS 119 Ordering Code Q67000-S007 0.17 A Pin 3 D S G Type VPS05557 RDS(on) Package

Contextual Info: DATA SHEET_ NEC SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS in mm Low-voltage, low-current, low-noise and high-gain • NF = 3.0 dB TYP.

AN 7591 POWER AMPLIFIER

Abstract: an 7591 nec d 1564
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2 S C 3 5 8 3 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from V H F band to U H F band.

KST2222

Abstract: transistor marking 551
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST2222 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: SAMSUNG SEMICONDUCTOR I NC 14E | 7*11,4142 0007^^6 «1 | T - t f - * ? MMBTA63 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C C h aracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

MMBT2907

Contextual Info: S A M S UN G SE MI CO ND UC TO R INC MMBT2907 IME 0 | 711.4142 000725? t | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT2907 IME 0 | 711.4142 0 0 0 7 2 5 ? t | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

P12152E

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT |iPC2708TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /XPC2708TB is a silicon monolithic integrated circuits designed as buffer amplifier for BS/CS tuners. This 1C

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT |iPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /XPC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. PACKAFE DIMENSIONS

TRANSISTOR BO 345

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ,uPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is sm aller than conventional minimold.

c2689

Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
Contextual Info: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n

P12152E

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /¿PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.

IC/CTC 1351 transistor pin detail

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC 2 7 1 0 TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular