TRANSISTOR MARKING KIY Search Results

Contextual Info: >kiyixi>ki 19-1090; Rev 1; 1/99 6 8 H C 1 1/B id irectio n al-C o m p atib le fiP R eset Circuit Features The MAX6314 low -pow er CMOS m icroprocessor ^P s u p e rv is o ry c ir c u it is d e s ig n e d to m o n ito r p o w e r s u p p lie s in ^iP and d ig ita l system s. The M A X6314’s

500 watt power supply circuit diagram 20kHz

Abstract: Marking DA SOT23-5 X8864
Contextual Info: >kiyixi>ki 19-0466; Rev 2 ; 11/98 Low -Dropout, 120mA Linear Regulators _ G e n e r a l D e s c r i p t i o n The devices feature Dual Mode operation: their out­ put voltage is preset at 3.15V for the T versions, 2.84V for the S versions, or 2.80V for the R versions or can be

Contextual Info: >kiyjxiyvi 19-0411; Rev 2; 2/98 4 - Pi n f j P V o l t a g e M o n i t o r s with Manual Reset Input _ F e a t u r e s The M AX811/M AX812 are low -pow er m icroprocessor fiP supervisory circuits used to m onitor pow er s u p ­

marking AE 5pin

Abstract: MAX4124EUK MAX4126
Contextual Info: >kiyjxiyvi 19-1087; Rev 1 ;8 /9 7 S i n g l e/ D u a l / Q u a d , Wide - B a n d w i d t h , L o w - P o w e r , S i n g l e - S u p p l y R a i l - t o - Ra i l I/O Op A m p s _F e a t u r e s The MAX4122-MAX4129 family of operational amplifiers

2SK3129

Abstract: K312 SC-65
Contextual Info: TO SH IBA 2SK3129 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 29 CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RßS (ON) = 5.5 mH (Typ.) High Forward Transfer Admittance: |Yfs| = 70S (Typ.)

A1681

Abstract: 2SA1681 2SC4409
Contextual Info: TOSHIBA 2SA1681 2 S A 1 681 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCES Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V q ^ (sat)“ —0.5V (Max.) (IC = —1A) High Speed Switching Time: tstg = 300ns(Typ.)

2SA1202

Abstract: 2SC2882
Contextual Info: TOSHIBA 2SC2882 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2882 Unit in mm POWER AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS 1.6 MAX. 4.6 MAX. 1.7MAX. • Suitable for Driver of 30~35 Watts Audio Amplifier • Pq = 1~2W (Mounted Ceramic Substrate)

Contextual Info: TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (1(2 = 700mA) High Speed Switching Time : tgtg = 0.3;i*s (Typ.)

2SA1213

Abstract: 2SC2873
Contextual Info: TO SH IBA 2SC2873 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2873 Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. —J- * 4.6MAX. 1.7MAX. Low Saturation Voltage : V q ^ ( s a t ) “ 0.5V (Max.) (Ic = lA)

2SA1734

Abstract: 2SC4539 A1734
Contextual Info: 2SA1734 TOSHIBA 2 S A 1 734 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V q ^ (sat)“ —0.5V (Max.) (IC= _700mA) High Speed Switching Time: ^ ^ = 0 .2 /^ (Typ.)

2SA1736

Abstract: 2SC4541
Contextual Info: TOSHIBA 2SC4541 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (IC = 1.5A) High Speed Switching Time : ^ ^ = 0.5/^ (Typ.)

2SA1314

Abstract: A1314 J-21
Contextual Info: 2SA1314 TO SH IBA 2 S A 1 314 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO PO W ER APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. 0.4 +0.05 High DC Current Gain and Excellent Linearity • V i t /-•X = 1 A O - R O O ( \ T n - n = _ 1 V

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TO SH IBA 2 S A 1 213 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. • • • • • : V c e (sat)~ —0.5V (Max.) (IC = —1A) High Speed Switching Time: tgtg^l.O/^siTyp.)

TPC8003

Contextual Info: TO SH IBA TPC8003 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSÏÏ TPC8003 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS Q n n n lifl/1 M U ^ r ^ /n v v i in xxx v v x x x ^ /u v v o n r l TViiv»

2sj511

Contextual Info: TOSHIBA 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX. -*J-*

MP4412

Abstract: marking DIODE 2U 04
Contextual Info: TOSHIBA MP4412 TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-?r-MOSV 4 IN 1 MP4412 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. FOR PRINTER HEAD PIN DRIVER AND PULSE MOTOR DRIVER INDUSTRIAL APPLICATIONS Unit in mm FOR SOLENOID DRIVER • •

Contextual Info: SII Group Social and Environmental Report 2005 Striving for Coexistence with Society and Harmony with the Earth Corporate Environmental Administration Group 8, Nakase 1-chome, Mihama-ku, Chiba-shi, Chiba 261-8507, Japan Telephone: +81-43-211-1111 / Direct: +81-43-211-1149

P80A49H

Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Contextual Info: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.