TRANSISTOR MARKING CODE MT Search Results

2SA1036K

Abstract: transistor surface mount to 2SA1577 2SC2411K 2SC4097 T106 T146 transistor PNP
Contextual Info: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions U n its: mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1036K and 2SA1577; H-*, where ★ is hFE code • • • large collector current: ^C(max) = —500 mA

Contextual Info: • bb53T31 D0555Qb MTD H A P X N AUER PHILIPS/DISCRETE BSP120 b7E » N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and

Contextual Info: 2SB1427 2SD2153 Transistors I Power Transistor 20V, —2A 2SB1427 •F e a tu re « •A b s o lu te maximum ratings (T a = 2 5 t:) 1 ) LowVcE(Mt>. ( T y p .— 0 .5 V a t Ic/ I b = — 1 /— 5 0 m A ) Parameter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .

transistor w10

Abstract: marking W8 transistor
Contextual Info: UMW6N / UMW1 ON / UMX4N / FMW6 / FMW10 / IMX4 UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 Transistors I General Purpose Dual Transistors UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4 •Features 1 ) Two 2SC3837K chips are housed in a UMT or SMT package. 2 ) High transition frequency. (fT=1.5GHz)

S-5711ANDL-I4T1G

Abstract: MP003-C-P-SD-1
Contextual Info: Rev.2.7_00 BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC S-5711A Series The S-5711A Series, developed by CMOS technology, is a Hall IC with a high-sensitivity and operates on a low current. The output voltage changes when the S-5711A Series detects the intensity

Contextual Info: Rev.2.1_00 BIPOLAR DETECTION TYPE HALL IC WITH POWER-DOWN FUNCTION S-5721A/5722A Series The S-5721A/5722A Series, developed using CMOS technology, is a bipolar detection type Hall IC with a high-sensitivity that operates on a low current. The output voltage changes when the S-5721A/5722A Series detects the

Contextual Info: S-57K1 A Series www.sii-ic.com FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.2_00 Seiko Instruments Inc., 2013 The S-57K1 A Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high temperature and

Contextual Info: UTC PUMT1 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION Two independently operating PNP transistors. FEATURES *Low current max.100mA 6 *Low voltage (max.40V) 5 4 *Reduces number of components and board space. * Complement to PUMX1.

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is

Contextual Info: S-57A1 A Series www.sii-ic.com FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC Rev.1.1_00 Seiko Instruments Inc., 2013 The S-57A1 A Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high temperature and

amplifier for piezo sensor

Abstract: Micronas hall sensor marking
Contextual Info: DATA SHEET MICRONAS Edition Oct. 19, 2004 6251-439-2DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 DATA SHEET Contents Page Section Title 3 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. 1.6. Introduction Features Marking Code Special Marking of Prototype Parts

Contextual Info: DTA144GUA / DTA144GKA DTC144GE / DTC144GUA / DTC144GKA / DTC144GSA Transistors Digital transistors built-in resistors DTA144GUA / DTA144GKA I •A bsolu ts maximum ratings ( T a = 2 5 t ) •Features 1 ) The built-in bias resistors consist of thin-film resistors with

AN569

Abstract: MTP3055VL DSA00107673
Contextual Info: MTP3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

AN569

Abstract: MTP30N06V MTP36N06V
Contextual Info: MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: MTP20N06V Preferred Device Power MOSFET 20 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

TH 2190 Transistor

Abstract: TH 2190 mosfet AN569 MTP30P06V QT824
Contextual Info: MTP30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MTP15N06V

Abstract: AN569
Contextual Info: MTP15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

AN569

Abstract: MTP5P06V
Contextual Info: MTP5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

transistor c101

Abstract: C102 M transistor 2SC40B c102 TRANSISTOR
Contextual Info: 2SC4725 / 2SC4082 / 2SC3837K 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S Transistors I High-Frequency Amplifier Transistor 18V, 1.5GHz 2S C 4 7 2 5 / 2S C 4 0 8 2 / 2 S C 38 37K •A b s o lu te maximum ratings (T a = 2 5 'C ) •F e a tu re s ) High I t . (fT= 1 .5 G H z )

PF6000

Contextual Info: MTP40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

mosfet transistor 400 volts.100 amperes

Contextual Info: MTP15N06VL Preferred Device Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: MTP52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: D TA124G KA / DTA124G SA Transistors D TC 124G U A / D T C 124G K A / D TC 124G S A I Digital transistors built-in resistors DTA124GKA / DTA124GSA •F eatures •A bsolu te maximum ratings (Ta=25iD) 1 ) The built-in bias resistors consist of thin-film resistors with

skyper 42

Abstract: SEMIKRON BOARD skyper SKYPER 42 R
Contextual Info: SKYPER 52 R Absolute Maximum Ratings SKYPER IGBT Driver Core SKYPER 52 R Symbol Conditions Vs Supply voltage primary tp<20ms, repition frequency < 1 Hz ViH Input signal voltage (HIGH) Vs + 0.3 V ViL Input signal voltage (LOW) GND - 0.3 V IoutPEAK Output peak current