FL53SBDS Search Results

SuperArgus

Abstract: K380P
Contextual Info: SIEMENS AKTIENGESEL LSCHAF m fl53SbDS 00Eb7 33 0 4?E D Lumineszenzdioden Light Emitting Diodes E m is s io n s fa rb e ^•peak E m issio n c o lo r G e h á use fa rb e Iv 2<p* B e s te lln u m m e r C a s e c o lo r / F= 10 m A (5 0 % y O rd e rin g c o d e

Contextual Info: SIEM ENS 47E D • fl53SbDS GOSbBflH T ■ SIE6 RP-12C Mask-Diffused GaAsP LED PART NO. 2680-7075 -P M f P-metal anode Diffusion Barrier Epitaxial Layer Substrate N-metal (cathode) DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RP-12C is a mask-diffused GaAsP lightemitting diode. With a bright and uniform 655 nm

Contextual Info: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12

smd transistor 6b-1

Abstract: 6B1 zener diode smd transistor 6b1 6 pin Optocoupler 1209 optocoupler ci 6pin smd transistor 335 smd L05B transistor MW 882
Contextual Info: SIEMENS LH 1485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off Dimensions in inches mm Pin One ID. 131 [21 f f l • Isolation Test Voltage, 5300 VACrMS .248^(6.30) .256 (6.50) APPLICATIONS • Motor Drive Controls

siemens sab 82538

Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

Contextual Info: Infineon technologies Uni- and Bipolar Hall 1C Switches for Magnetic Field Applications TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Bipolar 1C Features • • • • • • Temperature compensated magnetic performance Digital output signal

Contextual Info: SIEM ENS 3.3 V DRAM Modules HYM 64Vx005GCD L -60 144 pin SO-DIMM EDO-DRAM Modules 8 MB, 16 MB, 32 MB & 64 MB density Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Modules for PC notebook applications • Chip-on Board (COB) Assembly Technique

Contextual Info: SIEMENS TLE 5226 G Smart Quad Channel Low-Side Switch Product Summary Vs 4.8 - 32 V Drain source voltage VoS AZ max V On resistance 60 0.2 Output current RoNJyp) 3.4 Id 1,2 0.35 2x5 Id3/1 2x3 C V* Supply voltage zl o CC Features • Low ON-resistance 2 x 0.2 Î2 , 2 x 0.35 Î2 (typ.)

D0713

Abstract: siemens 10e 514100
Contextual Info: SIEM E N S 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 words by 1-bit organization • 0 to 70 “C operating temperature • Fast access time RAS access time:

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers SAB 88C166 W Preliminary SAB 88C166(W) 16-Bit Microcontrollers with 32 KByte Flash EPROM • • • • • • • • • • • • • • • • • • • • • High Performance 16-bit CPU with 4-Stage Pipeline

l22e

Abstract: BC213 BC212 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B
Contextual Info: SIE D • SIEM ENS flE35b05 0D4153E Obfl M S I E 6 SI EM EN S A K T I E N G E S E L L S C H A F " P 2 ñ 'Z - l PNP Silicon AF Transistors BC212 BC 213 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 182, BC 183 NPN

6B1 zener diode

Abstract: 5- pin smd IC 775 transistor 335 smd smd transistor 6b-1 SMD 6 PIN IC 2N2222 2n2222 smd transistor transistor 2N2222 SMD configuration transistor 2N2222 SMD smd transistor 3j L05 SMD diode
Contextual Info: SIEMENS LH 1485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACrMS Dimensions in inches mm Pin One ID. 131 [21 f f l .248^(6.30) .256 (6.50) APPLICATIONS

transistors BC 543

Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Contextual Info: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,

L-SIM-30-1

Contextual Info: SIEMENS 1 M X 8-Bit Dynamic RAM Module HYM 22100S-60/-70/-80 Advanced Information • 1 048 576 words by 8-bit organization • Fast access and cycle 60 ns access time 110 ns cycle time -60 70 ns access time 130 ns cycle time (-70 80 ns access time 150 ns cycle time (-80

PQFP164

Abstract: P-QFP-164
Contextual Info: 'j~ ^ 2 - n ~ o = ì SIEMENS AKTIENGESELLSCHAF SIE D • fl23SbDS D0M22MM T2M M S I E G SIEMENS Semicustom ICs SCxD4: »Sea-of-Gates« Gate Arrays SCxD4: 1 |jm Sea-of-Gates gate arrays »Made in Europe« Follow ing the proven S e a -o f-G a te s architectures, S iem ens offers a w id e

SDA 3526-2

Contextual Info: bOE ]> • fi23SbQS 0 0 4 ^ 4 1 ^ S IE M E N S T71 M S I E S t ^ - ,3 - z 6 SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 2-Kbit E2PROM with PC-Bus and 2 K Write Protection SDA 3526-2 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in

Contextual Info: SIEM ENS 8M x 8 -Bit Dynamic RAM HYb 3 1 64805AJ/AT L -40/-50/-60 (4k & 8 k-Refresh, EDO-version) HYB 3165805AJ/AT(L) -40/-50/-60 P r e lim in a r y In fo rm a tio n • 16 777 216 words by 4-bit organization • 0 to 70 "C operating tem perature • Hyper Page M ode - EDO - operation

Contextual Info: SIEMENS 5 -V L o w -D ro p V o ltag e R eg u lator T L E 4261 Prelim inary Data B ipolar IC Features • • • • • • • • • • • • • Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity

Contextual Info: SIEMENS BUZ 11 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 11 S2 60 V 30 A ^DS on Package Ordering Code 0.04 Q TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Values Continuous drain current

Contextual Info: SIE M EN S A K T I E N G E S E L L S C H A F 4?E D • 0 2 3 S b O S QD3flt27 b « S I E G g - S ^ W S EMI SUPPRESSION CHOKES B 82432 SIMID 03 Chip inductors for surface mounting S M D Rated current 0.0 5 5 to 0.6 A S IM ID 0 3 series (Siem ens M in ia tu re Inductors)