Q67050 Search Results

E6327

Abstract: smart SIPMOS Q67000-S271 SIPMOS E3128A siemens sot223 BTS630 Q67000-S227 Q67000-S311 PROFET
Contextual Info: Smart Power Switches One Channel High Side Switches Channel Mini PROFET Smart SI PMOS® Technology Juso A. (lim) min A A Bestellnummer Ordering Code Gehäuse Package Bild Figure 5000 0.07 0.2 Q67000-S227 S OT223-4-1/3-1 5000 0.07 0.2 Q67050-M1 SOT223-4-1/3-1

Contextual Info: euoec BSM 75 GB 60 DL F IGBT Power Module Target data sheet • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 75 GB 60 DL 600V 100A Package Ordering Code HALF BRIDGE 1 Q67050-A1001-A70

Q67050-T7

Contextual Info: BSS 169 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Ordering Code BSS 169 100 V 0.12 A 12 Ω SOT-23 Q67050-T7 Maximum Ratings Parameter

Contextual Info: BSM 200 GB 60 DN2 IGBT Power Module Target data sheet • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GB 60 DN2 600V 235A HALF-BRIDGE 1 Q67050-A1004-A70 Maximum Ratings

igbt module bsm 200 gb 120 dl

Abstract: igbt module bsm 100 gb 60 dl
Contextual Info: BSM 100 GB 60 DL IGBT Power Module Preliminary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 60 DL 600V 125A HALF BRIDGE 1 Q67050-A1002-A70

Siemens MTT 40 A 12 N

Contextual Info: SIEMENS BSP 300 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Type BSP 300 ^DS 800 V Type BSP 300 Ordering Code Q67050 -T0009 0.19 A Package ñ DS on 20 a Marking SOT-223 Tape and Reel Information Maximum Ratings Values Parameter Symbol

igbt module bsm 100 gb 60 dl

Contextual Info: BSM 75 GB 60 DL IGBT Power Module Target data sheet • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 75 GB 60 DL 600V 100A HALF BRIDGE 1 Q67050-A1001-A70

igbt module bsm 100 gb 60 dl

Contextual Info: BSM 50 GB 60 DL IGBT Power Module Preliminary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GB 60 DL 600V 65A HALF-BRIDGE 1 Q67050-A1000-A70

vqe 24 e

Abstract: vqe 24 d
Contextual Info: euoec BSM 50 GB 60 DL F IGBT Power Module Prelim inary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 60 DL 600V 65A Package O rdering Code HALF-BRIDGE 1 Q67050-A1000-A70

BSP 300

Contextual Info: SIEMENS BSP 300 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Type BSP 300 V'bs 800 V Type BSP 300 Ordering Code Q67050 -T0009 0.19 A ^DS on Package 20 Q SOT-223 Marking Tape and Reel Information Maximum Ratings Parameter Symbol Drain source voltage

Q67050-T6

Abstract: RGs sot23
Contextual Info: BSS 159 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Ordering Code BSS 159 50 V 0.16 A 8Ω SOT-23 Q67050-T6 Maximum Ratings Parameter Symbol

Contextual Info: BSM 300 GA 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 300 GA 120 DL 1200V 550A IC Package Ordering Code SINGLE SWITCH 1 Q67050-S1004-A70

SIPC69N60C2

Contextual Info: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2

4344

Abstract: SIDC06D60F
Contextual Info: Preliminary SIDC06D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D60F 600V ICn 15A A This chip is used for:

SDT08S60

Abstract: SIDC24D60SIC3 DSA0037454
Contextual Info: SIDC24D60SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery

SIPC26N60C2

Contextual Info: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2

SIPC10N60S5

Contextual Info: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5

SIPC10N60C2

Contextual Info: Preliminary SIPC10N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60C2

L4241M

Contextual Info: Preliminary SIDC42D170E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1700V EMCON technology 200 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC42D170E6 1700V IF 50A A This chip is used for:

Emcon

Abstract: SIDC78D170H
Contextual Info: SIDC78D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC78D170H 1700V 150A This chip is used for:

SIDC161D170H

Contextual Info: SIDC161D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC161D170H 1700V 300A A This chip is used for:

SIGC20T120

Contextual Info: SIGC20T120 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC20T120 VCE ICn 1200V 15A This chip is used for: • power module

SIDC07D60F6

Contextual Info: Preliminary SIDC07D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC07D60F6 600V 22.5A A This chip is used for:

diode Vr 1200v

Abstract: a4100 Q67050-A4100 SIDC53D120H6
Contextual Info: Preliminary SIDC53D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC53D120H6 1200V 100A A This chip is used for: