TRANSISTOR MARKING AR CODE Search Results

Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code

TRANSISTOR marking ar code

Abstract: KSA1201 KSC2881
Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code

transistor 1203

Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

transistor 1fp

Abstract: 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 BC848 npn general purpose transistors 1gp npn code 1gp
Contextual Info: DISCRETE SEMICONDUCTORS BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification

transistor B3 OF

Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
Contextual Info: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

B3 transistor

Abstract: KSA1203 KSC2883
Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

transistor 6Cp

Abstract: bc817 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp
Contextual Info: DISCRETE SEMICONDUCTORS Æm ülnlEET BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification

Contextual Info: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

mar-08 transistor

Abstract: MCD920 DEVICE MARKING CODE 150A PBSS4350D PBSS5350D MCD919
Contextual Info: Philips Semiconductors Product specification NPN transistor PBSS4350D FEATURES PINNING • High current capabilities PIN • LOW VcEsat- DESCRIPTION 1 collector 2 collector APPLICATIONS 3 base • H eavy duty battery pow ered equipm ent Autom otive, T elecom and A udio/V ideo such as m otor and lamp

SOT89 MARKING CODE B2

Abstract: SOT89 MARKING CODE S3
Contextual Info: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code

KSB1121

Abstract: KSD1621
Contextual Info: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code

microwave transistor 03

Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor
Contextual Info: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS

6R190C6

Abstract: smd TRANSISTOR code marking PR smd transistor marking da IPP60R190C6 EL series SMD transistor TRANSISTOR marking ar code 6r190 smd transistor marking 1 da
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 1.0, 2009-06-19 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

KSC2982

Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking

TRANSISTOR SMD MARKING CODE 210

Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking

N-Channel Depletion-Mode MOSFET

Contextual Info: LND250 P relim ina ry N-Channel Depletion-Mode MOSFET Ordering Information Order Num ber / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0mA LND250K1 where * = 2-week alpha date code BVd s x / ^DS(ON) Idss B V dgx (max) 500V 1.0KQ *S am e as SO T-23. All units shipped on 3,000 piece carrier tape reels.

BCX19

Abstract: BCX20 npn general purpose transistors application BCX18
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors Product specification

transistor marking 2d ghz

Abstract: BFG41OW
Contextual Info: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification

BFG403W

Contextual Info: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors

"MARKING CODE P5"

Abstract: BFG425W
Contextual Info: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors

transistor marking codes list

Abstract: MQ 6 SENSOR 2n5088 transistor
Contextual Info: E Ü ffl H E W L E T T mLUM P A C K A R D Low Current Bar Code D igitizer IC Technical Data HBCC-0500 Description The Hewlett-Packard Low Current Bar Code Digitizer IC allows designers to incorporate the high ambient light rejection and low power consum ption features of

PDTA143EU

Abstract: 3c transistor Transistor Bo 47 PDTA143
Contextual Info: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143EU FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 k£l each • Simplification of circuit design • Reduces number of components and board space. APPLICATIO NS

DOC204943

Contextual Info: REV A DESCRIPTION DATE 4/23/14 NIR-52399 PREP DF/SM APPD LT Oscillator Specification, Hybrid VCXO For MOUNT HOLLY SPRINGS, PA 17065 THE RECORD OF APPROVAL FOR THIS DOCUMENT IS MAINTAINED ELECTRONICALLY WITHIN THE ERP SYSTEM Hi-Rel Standard, LVDS Output CODE IDENT NO

AN-994

Abstract: IRF740A 12V 10A SMPS 6-0A36 IRF740AS
Contextual Info: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic