KSC2881 Search Results

KSC2881

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type NPN Epitaxial Silicon Transistor KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: Transistors Transistor T SMD Type Product specification KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor

SOT89 MARKING CODE B2

Abstract: KSC2881 KSA1201
Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2881 POWER AMPLIFIER • • • • SO T-89 C ollector-E m itter Voltage V Ceo = 1 2 0 V fT=120M H z C ollector Dissipation Pc=1~2W : M ounted on C eram ic Board C om plem ent to KSA1201 ABSOLUTE MAXIMUM RATINGS TA=25°C

Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code

KSA1201

Abstract: KSC2881
Contextual Info: KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor

Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA1201 POWER AMPLIFIER • • • • S O T-89 C ollector-E m itter Voltage: VCeo= -120V fx=120MHz C ollector Dissipation Pc=1~2W : M ounted on C eram ic Board C om plem ent to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25°C

Contextual Info: KSC2881 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • CoHector-Emftter Voltage Veto“ 120V • fr“ 120MHz • Collector Dissipation Pc“ 1~2W: Mounted on Ceram ic Board • Complement to KSA1201 ABSOLUTE MAXIMUM RATINGS Ta-251C Sym bol

Contextual Info: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER • • • • Collector-Em itter Voltage V ceo * -120V fr-120M Hz Collector Dissipation PC“ 1~2W: Mounted on Ceramic Board Complement to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25 TC C haracteristic

Contextual Info: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Dissipation PC=1~2W: Mounted on Ceramic Board • Complement to KSC2881 SOT-89 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic

Contextual Info: KSC2881 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • Collector-Emitter Voltage V c e o = 120V • fT= 120MHz • Collector Dissipation PC=1~2W: Mounted on Ceramic Board • Complement to KSA1201 ABSOLUTE MAXIMUM RATINGS TA = 25°C Characteristic

Contextual Info: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • • • • Collector-Emitter Voltage VCEo= -1 2 0 V fT= 120MHz Collector Dissipation Pc= 1 -2 W : Mounted on Ceramic Board Complement to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic

KSC2881

Abstract: KSA1201
Contextual Info: KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor

KSA1201

Abstract: KSC2881
Contextual Info: KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2881 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

TRANSISTOR marking ar code

Abstract: KSA1201 KSC2881
Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code

KSA1201

Abstract: KSC2881
Contextual Info: KSC2881 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER • Collector-Emitter Voltage VCEO=120V • fT=120MHz • Collector Dissipation PC=1~2W: Mounted on Ceramic Board • Complement to KSA1201 SOT-89 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic

KSA1201

Abstract: KSC2881
Contextual Info: KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2881 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

KSC2880

Abstract: KSA1200
Contextual Info: FUNCTION GUIDE TRANSISTORS 1-4. High Voltage Transistors 1-4-1. SOT-23'Type Transistors Condition Device and Polarity NPN KST42 1D KST43(1 E) PNP lc (A) VCE (V) lc (mA) MIN 300 200 150 140 0.5 0.5 0.5 0.6 10 10 5 5 30 30 10 10 40 40 60 60 KST92(2D) KST93(2E)

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A