TRANSISTOR MARKING 1201 Search Results
TRANSISTOR MARKING 1201 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 5962-8672601EA | Rochester Electronics LLC | Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) |
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| 5962-8672601FA | Rochester Electronics LLC | Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) |
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| 54F151/B2A | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) |
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| ICL7667MJA/883B | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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TRANSISTOR MARKING 1201 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code |
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ksa1201-120v120mhzksc2881+1 | |
TRANSISTOR marking ar code
Abstract: KSA1201 KSC2881
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ksa1201-120v120mhzksc2881+2 | |
2SC1412
Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
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2sa1037aksc-88a-50/ia-50pa+11 | |
BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
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lcd01bfg55aphilips discrete a440ic05 philips+3 | |
5 terminal ba7810
Abstract: ba7810 5 pin ba7810 MARKING BA7810 TO220cp-3
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500maba78seriesba78mseries12019ect01+9 | |
transistor 1201
Abstract: uc 1201 SRC1201M
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src1201mo-92mksr-i001-000transistor 1201+1 | |
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Contextual Info: SRC1201M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process |
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src1201mo-92mksr-i001-002 | |
SRC1201M
Abstract: transistor marking 1201
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src1201mo-92mksd-r0b001-000transistor marking 1201 | |
SRC1201MContextual Info: SRC1201M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process |
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src1201mo-92mksr-i001-003 | |
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Contextual Info: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • • • High Voltage and High Current : VCE0 = - 50V, I C = - 150mA(Max.) Excellent hpE Linearity : hpE Oc ~ - 0.1mA) I hFE d c = -2m A) = 0.95 (Typ.) |
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2sa1832f150ma2sc4738ft-100ma+2 | |
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Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial |
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2n2857ubmil-prf-19500/3432n2857t4-lds-0223-1 | |
2N2857UBContextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial |
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2n2857ubmil-prf-19500/3432n2857t4-lds-0223-1 | |
5 pin ba7810
Abstract: 5 terminal ba7810
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500maba78m12019ect01o220cp-3+3 | |
transistor marking tT2Contextual Info: HITACHI 2SC5140-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.6 dB typ. at f = 900 MHz 1. Emitter 2. Base |
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2sc5140------silicon2sc5140transistor marking tt2 | |
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Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version , |
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2n2857mil-prf-19500/343t4-lds-0223 | |
2N2857
Abstract: 2N2857 JANTXV
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2n2857mil-prf-19500/343t4-lds-02232n2857 jantxv | |
2N2857 JANTX
Abstract: 2n2857 common base amplifier 2N2857 JANTXV 2N2857 TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
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2n2857mil-prf-19500/343t4-lds-02232n2857 jantx+5 | |
2SK2741Contextual Info: 2SK2741 TOSHIBA TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2741 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive |
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2sk2741600mm2961001eaa2 | |
250mA
Abstract: AME8821 AME8821AEEV180Y 3V REGULATOR SOT-25 4- Vin
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ame8821250maot-25/tsot-250374bsc+4 | |
3V REGULATOR SOT-25 4- Vin
Abstract: AME8821AEEV180Y AME8821
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ame8821250maot-25/tsot-251009-ds8821-a+2 | |
v 817 yContextual Info: H ITACH I 2SC5218-Silicon NPN Epitaxial Transistor Application MPAK V HF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz W- Table 1 Absolute M axim um Ratings Ta = 25°C |
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2sc5218------silicon2sc5218sc-59av 817 y | |
2SK2615
Abstract: transistor marking 2A H
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2sk2615961001eaa2transistor marking 2a h | |
marking IAY
Abstract: 2SA1832F 2SC4738F
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2sa1832f150ma2sc4738fmarking iay | |
2SJ360Contextual Info: TOSHIBA 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ360 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1.6MAX. 4.6MAX. |
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2sj360600mm2961001eaa2 | |