TRANSISTOR LT 028 Search Results

MC-424000A9BA

Abstract: C-424000A9BA simm 30-pin 9-bit MC-424000A9
Contextual Info: jW X Y * t i M2à W NEC Electronics Inc. Description The M C-424000A9 and the M C-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o perate from a single + 5 -v o lt power supply. Advanced CM OS circuitry, including a single-transistor

transistor et 454

Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
Contextual Info: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I

2SK872

Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss

transistors 2n5913

Abstract: 2N5913 Transistor 2n5913 423 rca transistor 423 rca 2n5913 application note 0.1 mF ceramic disc capacitor Arnold Magnetics D0028 VK200-09/3B
Contextual Info: File No. 423 R F Power Transistors Solid State Division 2N 5913 Silicon N-P-N Overlay Transistor 1 2 .5 -V o lt, High-G ain T y p e fo r Class-C A m p lifie rs in V H F /U H F C o m m un icatio ns E q uip m en t Features: • High Power G ain , High Power Output . . .

Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1 ) H ig h ►External d im e n s io n s (U nits: m m ) IcMax. 2SC2411K IcMax. = 0 .5 m A 2) L o w VcE(sat). O p tim a l f o r lo w v o lt ­ a g e o p e ra tio n .

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •F e a tu re s IcMax. = - 5 0 0 m A 2) • E x t e r n a l d im e n s io n s (U nits: m m ) L a rg e lc. 2SA1577 2SA1036K L o w VcE(sat). O p tim a l f o r lo w - v o lt'¿±0.1

pw510

Abstract: H150 TC-6178
Contextual Info: 7 s— • S '— S h- SEC Com pound Transistor i i f / v r z BA1A3Q fJtrt I c N P N x V=3> Y = 7 > i> ^ 4# f t £ ffl£ [ U o / < ^ f L T ^ - iì ! mm * 2 . 0 ± 0.2 i : 1~ 0 ^ 6" (R i = 1.0 kQ, R 2= 10 kQ) 46” O BN 1A3Q £ =i > 7° ij / > ^ ij T lt if f l

transistor LT 028

Abstract: LT 74 s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line lc = - 400 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . . d esigned for am plifier, frequency m ultiplier or o scillator a p p li­ cations in m ilitary and industrial equipm ent. Suitable for use as

2N4985

Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can

LT 0206

Abstract: 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION • The LTZ 1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2µVP-P of noise and long term stability of 2µV/√k⎯ ⎯H⎯r.

t05 package transistor pin configuration

Abstract: Zener diode 1N4148 ZENER 1N4148 negative temperature coefficient devices 1n4148 1n4148 die chip 1N4148 chip 1N4148 MARKING A2 1N4148 tempco 1n4148 zener diode Low Noise Zener Diode
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION n The LTZ1000 and LTZ1000A are ultra-stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2 VP-P of noise and long-term stability of 2μV/√kHr.

1N4148 tempco

Abstract: ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000A LTZ1000ACH
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A reduces insulation requirements

MC1466

Abstract: MC1466L MC1466L equivalent schematic of mc1466 1E75 MJE340 REGULATOR DM 0265 R pin EQUIVALENT ITT 1N4001 7905 positive voltage regulator MC1466 L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PRECISION WIDE RANGE VOLTAGE and CURRENT REGULATOR PRECISION WIDE RANGE VOLTAGE AND CURRENT REGULATOR T h is u n iq u e “f lo a t in g " re g u la t o r c a n d e liv e r h u n d r e d s o f v o lt s — lim ite d o n ly b y th e b r e a k d o w n v o lt a g e o f th e e x te rn a l s e rie s

zener diode 1n4148

Abstract: diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES n n n n n n n n DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long-Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements

CC1LK

Abstract: M82 diode darlington pair power transistor of ic 4016 transistor pjm Monolithic Transistor Pair SMU FM IC ECG904 military TRANSISTOR MANUFACTURER symbols diagram DARLINGTON
Contextual Info: PHILIPS E C G INC fafaSB^afi □ OCGSfi'ì fa • 17E D ECG904 GENERAL-PURPOSE TRAN SISTO R ARRAY semiconductors DIMENSIONAL OUTLINE D im e n s io n s In In c h e s and m illim e te r s Fo f.Low -Pow sr A pp lications at Frequencies fro m D C Through the V H F Range

SN1000

Abstract: negative temperature coefficient devices 1n4148 1n4148 zener diode zener 1n4148 LM199 1n4148 die GR01 ZENER 1N4148 Datasheet Zener 35v dip 1N4148
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V

LM199

Abstract: LTZ1000 1n4148 die chip 1n4148 die Thermocouple 2N3904 ZENER 1N4148 Datasheet 1N4148 LTZ1000A LTZ1000ACH LTZ1000CH
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V

TRANSISTOR SE 135

Abstract: P13TP
Contextual Info: 5V Linear Controller/Driver Features Description The CS-8128 contains all the necessary control circuitry to implement a 5V lin­ ear regulator. An external pass device is used to produce superior performance compared to conventional m ondithic regulators. The CS-8128 w ith a TIP42

Contextual Info: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s •E x te rn a l dim ensions (Unit: mm) 1 ) Low on-resistance. T + 0 .3 3 - 0.1 2) High-speed switching. *+ 0 .3 - 0.1 3) W ide SOA (safe operating area). 4) G ate-sonrce voltage gnaranteed at V gss = + 3 0 V .

117-5 VOLTAGE REGULATOR

Abstract: LT1175 LT1175-5 LT1175CN8 LT1175CN8-5 LT1175CS8 LT1175CS8-5 LT1175IN8 LT1175IN8-5 4572 IC 8PIN
Contextual Info: LT1175 500mA Negative Low Dropout Micropower Regulator DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ ■ Stable with Wide Range of Output Capacitors Operating Current: 45µA Shutdown Current: 10µA Adjustable Current Limit Positive or Negative Shutdown Logic

pirgo 2N3054

Contextual Info: I ELECTRONICS INC ~ Ö 7 » T | D 0 H 3 5 t:iS DODODSS b 7 POWER TRANSISTOR ENGINEERING BULLETIN 2N3054 TYPE 2N3054, 4 AM P NP*L T E R M IN A L C O N N E C T IO N S SILICON SINGLE-DIFFUSED I BASE ? F M IT T E R CA SE CO LLECT O R SEATING "P L A N E 050 M AX*

schematic diagram induction heater

Abstract: TRANSISTOR 1FU klixon 63-4 3 hp 1500 rpm a.c. induction motor winding data transformer dash 2 b-5 3 TERMINAL 1838 ir sensor klixon start relay motor 12v to 230v inverters circuit diagrams J103 J107
Contextual Info: ftU E N -B R A D L E 'i Bulletin 1334 34 0 HP S e r ie s B jr ca up Senes A JVC Drives Adjustable Frequency instruction Manual Im p o rtan t User Inform ation B ecause of the v arie ty of uses for th is eq u ip m en t and because of the differences betw een th is solid s ta te eq u ip m en t and electrom echanical

upa74ha

Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Contextual Info: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )

IC-8857

Abstract: fbise t460 transistor bth 200 63445-5 UPA674T
Contextual Info: : r — — h '> > ; □ > h 7 > v x ^ PA674T Silicon Transistor N P N / P N P X fc f£ ^ V U ^ > h 7 / / P A 6 7 4 T « S jI^ - f 7 f > ^ h 7 > v X ^ ^ > y U * > 2 U ? 2 Ü IŸ F « U > V X ^ m O .: mm - Ï - m ìg iÈ D fà ± t > j:t fm m 3 x S ^ lM t c » ® u S - r o