TRANSISTOR KL Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

transistor BF 257

Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität

BFX65

Abstract: emitter DIN 41876
Contextual Info: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Rauscharme Vorstufen und Verstärker Applications: Low noise pre stages and amplifiers Besondere Merkmale: Features: • Besonders rauscharm bei kleinen Kollektorströmeri

ic 4033

Abstract: 2n4033 0w08
Contextual Info: Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendung: Kleinsignal und allgem ein Application: Sm all Signal and general purposes Besondere M erkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung

transistors

Abstract: bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent bc337 hie bc338 equivalent bc327 equivalent BC547 sot23
Contextual Info: Application Applikation Bipolar Transistors Bipolartransistoren Nomenclature: Benennung: B – Silicon Transistor C – LF Low Power Transistor nnn – Serial Number X or -nn – hFE Group B – Siliziumtransistor C – NF Kleinleistungstransistor nnn – Serien-Nummer

BF314

Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
Contextual Info: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität

transistor BF 509

Abstract: transistor BF 298 bf509 TRANSISTOR bf 297 EE50 to 92 z Kleine
Contextual Info: BF 509 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Regelbare VHF-Eingangsstufen Applications: Gain controlled VHF input stages Besondere Merkmale: • Hohe Leistungsverstärkung Features: • High p o w e r gain • Kleine Rauschzahlen

BF310

Abstract: bf 239 basisstrom 239BF
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis 100 MHz in Basisschaltung Applications: General up to 100 MHz in com m on base configuration Besondere Merkmale: • Kleine R ückwirkungskapazität

Contextual Info: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

kl2 t1 transistor

Contextual Info: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module

Contextual Info: FZ 400 R 12 KL Transistor Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module 0,052 °C/W pro Baustein / per module 0,03 Electrical properties °C/W Maximum rated values V cES 1200 V 400 A Ic

Contextual Info: FS 30 R 06 KL Transistor Thermische Eigenschaften Transistor R th J C Elektrische Eigenschaften Electrical properties Hochstzulassiqe Werte Vces Maximum rated values 600 Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm 0,21 1,25 C/W

diode t27

Contextual Info: FF 100 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 1200 lc Therm ische Eigenschaften Thermal properties 0,075 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module

Contextual Info: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module

Contextual Info: FF 75 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 75 A RthCK VcES Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module

R1200

Contextual Info: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module

Contextual Info: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module

FF 75 R 1200 KL

Abstract: kl diode
Contextual Info: FF 75 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 RthJC DC, pro Baustein / per module 0 ,2

TV horizontal Deflection Systems 25

Contextual Info: s= 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E 8 1 734 (N) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.

Contextual Info: FS 30 R 06 KL Therm ische Eigenschaften Thermal properties 0,21 DC, pro Baustein / per module R th J C DC, pro Zweig / per arm 1,25 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 30

Contextual Info: FF 50 R 06 KL 2 Therm ische Eigenschaften Therm al properties 0,25 DC, pro Baustein / per module RthJC 0,50 DC, pro Baustein / per module 0,06 pro Baustein / per module RthCK 0,12 pro Baustein / per module Transistor Transistor Elektrische Eigenschaften Electrical properties

Contextual Info: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module