TRANSISTOR K 702 Search Results

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

transistor KTA 949

Abstract: KTC2229 2SC 2229 transistor KTN5013 2238B transistor B 1184 transistor HFE 400 1w to 92 TO92C
Contextual Info: 2 DRIVER TRANSISTOR USE TYPE v CEO V * PC (mA) (mW) ELECTRICAL CHARACTERISTICS (Ta = 25C) T. Co ICBO (uA) «AX *E VCB (V) (mA) hFE VCE (sat) VCE (V) k: (mA) (V) *C (mA) (MHz) TYP (MIN) VCE k (V) (mA) -10 4.0 -10 I TO-92L fT MAX *B (mA) Cob. (pF) TYP (MAX)

KF 35 transistor

Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
Contextual Info: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications

DIODE B36

Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
Contextual Info: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —

FMA4

Contextual Info: K *7 > V 7s $ / T r a n s i s t o r s ROHM F CO LT» Ä 4 P FM A4 40E X fc?2 y t V ~ ? T D B 7020=^ DDDt3D2 7 ^ *3 -9 o Epitaxial Planar Dual M ini-M o ld PNP Silicon Transistor ^JfivH ill/D im ensions Unit:mm) 1) K / \ * 7 ^ - v T- 2) zm<n h 7 > '>'X £ <7)fêtëfr'* 3 -o T

B304 transistor

Abstract: hy transistor
Contextual Info: ROHM CO LTD hÿ MOE D m 7 8 2 0 = ^ 00D b304 4 HRHM /Transistors FMA5 • P H I ■* A T -V 3 -9 0 Jl>K P N P ^ I/ 3 > b 7 > v Z $ É -f > /' —£ K ^-i/tylnverter Driver Epitaxial Planar Dual Mini-Mold PNP Silicon Transistor • • ftJg-^JÈISJ/Pim ensions (Unit : mm)

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

1DI300M-120

Abstract: T151 T810 b336
Contextual Info: DI300M-120 /< 7_ =l - \ s y : Outline Drawings 10 13 21 r r T POWER TRANSISTOR MODULE * Features • High Arm Short Circuit Capability • hFE^Biv,' • 7 l) — High DC Current Gain U > ? ? ' % ' — K rtJR • IfeiiiJK Including Freew h eelin g Diode

b342 transistor

Abstract: 25t125 TRANSISTOR BO 344 B344 B341 1B2 zener diode B-343 B343 TG-400 B342
Contextual Info: 1 D I 3 0 0 M P - 1 2 0 3 0 0 A / N °7 “ •Outline Drawings h POWER TRANSISTOR MODULE : Features • High DC Current Gain • K r tlE • ffittflMftttERTflE ■ffljSs : Applications • General Purpose Inverter > '< — 9 • ( Uninterruptible Power Supply

zener diode B340

Abstract: Transistor b340 b337 b338 JV13 feme 1DI300MN-120 600ADC
Contextual Info: 1DI300MN-120 300A y < rJ — y =7 : Outline Drawings }U POWER TRANSISTOR MODULE : Features • hFE^'fSi' High DC Current Gain • - K rt* • *S!lSfaffli*liE*rifc : Applications 9 • General Purpose Inverter • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools

C 1008 y transistor

Contextual Info: ROHM CO MGE LTD B !> 7 Ö S Ö cn cl Q Q D h B Q b ô SRHM FMA6 / T r a n s is t o r s , , - - •■■■■ 7 - y j- 9 0 - ¿ 'M t *a r ; u $ - î k pnp v >; =i > h - 7 > ^ ^ O / S —£ K 7 < /V ln v e r te r Driver Epitaxial Planar Dual Mini-Mold PNP Silicon Transistor

diode B14A

Abstract: bjt 100a B14A equivalent 2D11002-120 M210 power BJT 100A B14A
Contextual Info: 2 Ä ID- / I1 1* v i0 / ^2 "- 1 2-Pack BJT 1200 V 100 a 1 ^2 01 / I Outline Drawings s < r7 — Y :7 > i * X 9 3E i > a . — k POWER TRANSISTOR MODULE Features • iS iM ± H igh V olta ge m y \) ij — K rt/R • ASO M S v ,' • In c lu d in g Free W h e e lin g D iode

b72 zener

Abstract: ZENER MIO N41I 30S3 M115 T151
Contextual Info: 1DI400MN-050 400A e±,(„ 5l-, '•Outline Drawings POWER TRANSISTOR MODULE ■ S J I : Features • hFE^'^V' High DC Current Gain • K rtJ •zm nm m t \ : Applications >'<— 9 • d General Purpose Inverter • Uninterruptible Power Supply • N C If P i& M

1d1200z

Abstract: transistor eft 323 FCLA M115 T151 1d1200 characteristics of zener diode TRANSISTOR WM 9
Contextual Info: 1 D 1 '< 7 - 2 Z N - 1 2 2 A : Outline Drawings l ' 7 / ' ÿ 7 Î ï ÿ i - ; i ' POWER TRANSISTOR MODULE : Features • h F E ^ i^ i' High DC Current Gain • K rt» : Applications • General Purpose Inyerter > '< — 9 • Uninterruptible Power Supply

IGBT 1MBH60-100

Abstract: 1MBH60-100 t930 T151 T460
Contextual Info: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS

Contextual Info: ROHM CO LTD HOE T> m 7020^ OaabBSb 3 KBRHM FMG7 h V > V 7, % / I ransistors ” FMG7 7 r V J - 9 0 X fcf $ * '> T jl' 7° U - ¿-&-T ^ 7 ; u 5 ^ "E- ;u K N PN V U 3 > * -7 > V X 2 'f >/ * —$ F ÿ ' f /tylnverter Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor

Contextual Info: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors Medium Power Transistor 50V, 0.5A I 2SD1949 / 2SD1484K / 2SC1741AS •Features •Absolute maximum ratinga (Ta=25t) 1 ) H ig h c u r r e n t , ( k — 0 .5 A ) 2 ) L o w V c e (w i >. ( T y p . 0 . 1 V Parameter

Contextual Info: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter

Contextual Info: Transistors NPN General Purpose Transistor I BC848BW/BC848B/BC848C fF M tu ra t •E x te rn a l dimensions Units : mm 1 ) BV ceo< 3 0V (Ic — 1mA) 2 ) C om plem ents the BC 858B /B C858BW . BC848BW •P a c k a g e , marking and packaging specifications

characteristics of zener diode

Abstract: 1DI300ZP-120 zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352
Contextual Info: 1 D 3 I Z P - 1 2 3 A « ± y<r7 - h : Outline Drawings POWER TRANSISTOR MODULE •Features • hFE^^V-' High DC Current Gain • KF*3/K •smmmuimm : Applications • General Purpose Inverter >'<— 9 • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools

MC 151 transistor

Abstract: B-408 diode B407 diode b407 transistor pc-100 2A5A 6DI10A-120 B408 diode b-408
Contextual Info: 6DI10A-120 ioa / < 7 — £ ± / < 7 — ; u : Outline Drawings JU POWER TRANSISTOR MODULE : Features • 7 •j—î jï 'f y • h F E ^ S l' • K r titt Including Free Wheeling Diode High DC Current Gain Insulated Type ! Applications • AC t — 9MV9

EVK31-050

Abstract: M190G J3E diode 30H3 M201 P460 T151 MTM M201
Contextual Info: EVK31-O5O 50a • S ± / < 7 - je ì >j . - ; u W M ’t H / < 7 — : Outline Drawings POWER TRANSISTOR MODULE : Features • 7 U —jJW U ' s W 4 • hFE^Siv,' • IfeÎ&Tfé — K rtS I Including Free Wheeling Diode High DC Current Gain Insulated Type

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series I SUPER LOW NOISE InGaAs HEMT i DESCRIPTION The M G F 4 4 1 0D series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

transistor H1A

Abstract: h1a transistor fuji 2di fuji 2DI 75Z-120 75Z12 bjt 1200V 15A JA BJT TRANSISTOR WM 9 75Z-120
Contextual Info: 2-Pack BJT 1200 V 75A 2DI 75Z-120 r i^ u TLtlO ïïIâDE ^<7- h : Outline Drawings POWER TRANSISTOR MODULE : Features • SffiSGE High Voltage • y l — y K rtiR • A S O ^ '/ S i* • ÜÊÜSffê including Free W heeling Diode Excellent Safe Operating Area