TRANSISTOR K 117 GR Search Results

transistor Amp 3055

Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@

8 pin ic 3773

Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442

BC260

Contextual Info: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case

HPV-S11

Abstract: Yamatake hpv-s12 transistor 2248 BA RV HPV-S12 ENV-50140 ENV50140
Contextual Info: OPERATING MODE 'LIGHT ON' 'DARK ON' CATALOG LISTING HPV-S11 HPV-S12 CORD LENGTH CATALOG LISTING LIGHT INDICATOR GREEN CORD LENGTH H P V -S * 2 0 0 0 m in . H P V -S *-L 0 5 5 0 0 0 m in . H P V -S *-L 1 0 10 000m in. POWER INDICATOR (RED) 2 CORD OIL R ESIST 0 2mm

Contextual Info: ALLEGRO MICROSYSTEMS INC =13 D • 0S0433Ö 0G037M7 □ ■ A L GR T-91-01 PROCESS YFA Process YFA NPN Power Darlington Transistor Process YFA is a double-diffused epitaxial planar N P N silicon Darlington pair. It is designed for use in high-gain, high-power amplifiers. Its complement is

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management

TIP110 equivalent

Contextual Info: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220

TRANSISTOR SE 140

Abstract: 2N3442 MOTOROLA TRANSISTOR SE 135
Contextual Info: MOTOROLA Order this document by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N 3442 H igh-P ow er Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and

2N3442 MOTOROLA

Abstract: 2N3442 transistor 2n3442
Contextual Info: MOTOROLA Order this document by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and

photo-electric switch

Abstract: Yamatake ENV-50140 HPV-D13 Yamatake HPV-D13 ENV50140 HPV-D13-L10 transistor 2248
Contextual Info: SR. No. m LP i CL LJ od Yamatake Corporation m s t±mm SPECIFICATIONS OPERATING MODE 'LIGHT ON'/'DARK ON' SELECTIVE CATALOG LISTING H P V -D 1 3 OPTICAL AXIS 1,2 CORD LENGTH CATALOG LISTING OPTICAL AXIS 1 OPTICAL AXIS 1 LIGHT INDICATOR GREEN OPTICAL AXIS 2

Contextual Info: ON Semiconductort 2N3442 High−Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 10 AMPERE POWER TRANSISTOR

Contextual Info: HEW LETT-PA CKARD/ CHPNTS b lE » Thal H EW LETT • M4M75AM GOCHflb? 074 HHPA AT-60586 Up to 6 GHz Low Noise Silicon Bipolar Transistor 1 "MM P A C K A R D Features 86 Plastic Package • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz

2N3442

Abstract: 2N4347 transistor 2n3442 NPN Transistor 10A 70V NPN 300 VOLTS vce POWER TRANSISTOR HF9 transistor pec 928
Contextual Info: Æà MOS PEC HIGH-POWER INDUSTRIAL TRANSISTORS NPN 2N3442 NPN silicon power transistors designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 2N4347 FEATURES:

MJE224

Abstract: pnp power transistor
Contextual Info: ON Semiconductor NPN Plastic Medium−Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general−purpose amplifier and low−speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ) @ IC

SE 7889

Abstract: Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909
Contextual Info: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features     Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio

transistor k 975

Abstract: transistor nf 37 transistor k 117 GR
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1162 Features • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.

Si3216

Contextual Info: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Software-programmable features and parameters: Ringing frequency, amplitude, cadence, and waveshape 2-wire ac impedance and hybrid

MJE224

Abstract: tip111g TIP11X
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •

L16 eeprom

Abstract: socket M vid pinout
Contextual Info: TSPC750IP Processor and Cache Module DESCRIPTION The Processor and Cache Module PCM is a 17 x 17 pin grid array (PGA) circuit assembly which combines a PowerPCt microprocessor and SRAM components into a CPU subsystem. The PCM provides a standard mechanical, electrical, and

WORKING PRINCIPLE IR SENSOR

Abstract: "BJT Transistors" IR phototransistor TRANSISTOR SUBSTITUTION BJT Transistors qrb1114 phototransistor as sensor parallax infrared sensor WORKING PRINCIPLE OF proximity sensor working principle of encoder
Contextual Info: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Errata for Process Control v1.0 (#122-28176) Chapter 4 Opto-Reflective Switch Use

c2481

Abstract: transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 BCR400W Q62702-C2481 103 ma siemens gaas fet npn marking tx
Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A pplication notes • Stabilizing bias current of NPN transistors and FETs from

marking w4s

Abstract: power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 Q62702-C2481 400w transistor TA-1004 "NPN Transistor"
Contextual Info: BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve

tip117 TRANSISTOR equivalent

Abstract: TIP110 TIP110G TIP111 TIP111G TIP112 TIP115 TIP116 TIP117 TIP110 application note
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching