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    TRANSISTOR K 117 GR Search Results

    TRANSISTOR K 117 GR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy
    5962-8672601EA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy

    TRANSISTOR K 117 GR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor Amp 3055

    Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
    Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@


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    625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055 PDF

    8 pin ic 3773

    Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442


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    E3B33c 000DQ5M lo-32 8 pin ic 3773 PDF

    BC260

    Contextual Info: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case


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    BC260 BC260 PDF

    HPV-S11

    Abstract: Yamatake hpv-s12 transistor 2248 BA RV HPV-S12 ENV-50140 ENV50140
    Contextual Info: OPERATING MODE 'LIGHT ON' 'DARK ON' CATALOG LISTING HPV-S11 HPV-S12 CORD LENGTH CATALOG LISTING LIGHT INDICATOR GREEN CORD LENGTH H P V -S * 2 0 0 0 m in . H P V -S *-L 0 5 5 0 0 0 m in . H P V -S *-L 1 0 10 000m in. POWER INDICATOR (RED) 2 CORD OIL R ESIST 0 2mm


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    HPV-S11 HPV-S12 2000min. 5000min. 10000min. JE099-2014 JE098-2003 JE097-2113 JE095-2007 JE094--2248 Yamatake hpv-s12 transistor 2248 BA RV HPV-S12 ENV-50140 ENV50140 PDF

    Contextual Info: ALLEGRO MICROSYSTEMS INC =13 D • 0S0433Ö 0G037M7 □ ■ A L GR T-91-01 PROCESS YFA Process YFA NPN Power Darlington Transistor Process YFA is a double-diffused epitaxial planar N P N silicon Darlington pair. It is designed for use in high-gain, high-power amplifiers. Its complement is


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    0S0433Ã 0G037M7 T-91-01 PDF

    Power Semiconductor Applications Philips Semiconductors

    Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
    Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management


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    TIP110 equivalent

    Contextual Info: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220


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    TIP110/111/112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 TIP110 equivalent PDF

    2N3442 MOTOROLA

    Abstract: 2N3442 transistor 2n3442
    Contextual Info: MOTOROLA Order this document by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and


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    2N3442/D* 2N3442/D 2N3442 MOTOROLA 2N3442 transistor 2n3442 PDF

    photo-electric switch

    Abstract: Yamatake ENV-50140 HPV-D13 Yamatake HPV-D13 ENV50140 HPV-D13-L10 transistor 2248
    Contextual Info: SR. No. m LP i CL LJ od Yamatake Corporation m s t±mm SPECIFICATIONS OPERATING MODE 'LIGHT ON'/'DARK ON' SELECTIVE CATALOG LISTING H P V -D 1 3 OPTICAL AXIS 1,2 CORD LENGTH CATALOG LISTING OPTICAL AXIS 1 OPTICAL AXIS 1 LIGHT INDICATOR GREEN OPTICAL AXIS 2


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    HPV-D13 HPV-D13 2000min. HPV-D13-L05 5000min. HPV-D13-L10 10000min. JE099-2014 50/60HZ 500m/s2 photo-electric switch Yamatake ENV-50140 Yamatake HPV-D13 ENV50140 transistor 2248 PDF

    Contextual Info: ON Semiconductort 2N3442 High−Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 10 AMPERE POWER TRANSISTOR


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    2N3442 O-204AA PDF

    Contextual Info: HEW LETT-PA CKARD/ CHPNTS b lE » Thal H EW LETT • M4M75AM GOCHflb? 074 HHPA AT-60586 Up to 6 GHz Low Noise Silicon Bipolar Transistor 1 "MM P A C K A R D Features 86 Plastic Package • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz


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    M4M75AM AT-60586 PDF

    2N3442

    Abstract: 2N4347 transistor 2n3442 NPN Transistor 10A 70V NPN 300 VOLTS vce POWER TRANSISTOR HF9 transistor pec 928
    Contextual Info: Æà MOS PEC HIGH-POWER INDUSTRIAL TRANSISTORS NPN 2N3442 NPN silicon power transistors designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 2N4347 FEATURES:


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    2N4347 2N3442 2N3442 2N4347 transistor 2n3442 NPN Transistor 10A 70V NPN 300 VOLTS vce POWER TRANSISTOR HF9 transistor pec 928 PDF

    MJE224

    Abstract: pnp power transistor
    Contextual Info: ON Semiconductor NPN Plastic Medium−Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general−purpose amplifier and low−speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ) @ IC


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    TIP110 TIP111* TIP112 TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 O-220AB MJE224 pnp power transistor PDF

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


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    PDF

    Si3216

    Contextual Info: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Software-programmable features and parameters: Ringing frequency, amplitude, cadence, and waveshape 2-wire ac impedance and hybrid


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    Si3216 GR-909 Si3216 PDF

    MJE224

    Abstract: tip111g TIP11X
    Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •


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    TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP115 TIP116 MJE224 tip111g TIP11X PDF

    L16 eeprom

    Abstract: socket M vid pinout
    Contextual Info: TSPC750IP Processor and Cache Module DESCRIPTION The Processor and Cache Module PCM is a 17 x 17 pin grid array (PGA) circuit assembly which combines a PowerPCt microprocessor and SRAM components into a CPU subsystem. The PCM provides a standard mechanical, electrical, and


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    TSPC750IP L16 eeprom socket M vid pinout PDF

    WORKING PRINCIPLE IR SENSOR

    Abstract: "BJT Transistors" IR phototransistor TRANSISTOR SUBSTITUTION BJT Transistors qrb1114 phototransistor as sensor parallax infrared sensor WORKING PRINCIPLE OF proximity sensor working principle of encoder
    Contextual Info: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Errata for Process Control v1.0 (#122-28176) Chapter 4 Opto-Reflective Switch Use


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    c2481

    Abstract: transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 BCR400W Q62702-C2481 103 ma siemens gaas fet npn marking tx
    Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A pplication notes • Stabilizing bias current of NPN transistors and FETs from


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    200mA BCR400W Q62702-C2481 OT-343 BCR400 235b05 00aTfl05 EHA07219 c2481 transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 103 ma siemens gaas fet npn marking tx PDF

    marking w4s

    Abstract: power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 Q62702-C2481 400w transistor TA-1004 "NPN Transistor"
    Contextual Info: BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    200mA Q62702-C2481 OT-343 Nov-27-1996 BCR400 marking w4s power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 400w transistor TA-1004 "NPN Transistor" PDF

    Contextual Info: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve


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    bbS3T31 BLV98CE OT171 bb53T31 MCA924 PDF

    tip117 TRANSISTOR equivalent

    Abstract: TIP110 TIP110G TIP111 TIP111G TIP112 TIP115 TIP116 TIP117 TIP110 application note
    Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching


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    TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP112, TIP117 tip117 TRANSISTOR equivalent TIP110 TIP110G TIP111 TIP111G TIP112 TIP115 TIP116 TIP110 application note PDF

    TDA 4941

    Abstract: tda4940 TDA4941 tda low voltage audio amplifier Q67000-A1872 ic tba 507 a STYROFLEX CAPACITOR Horizontal frequency kHz 15.625 TDA 4942 kHz-133
    Contextual Info: TDA 4940 FM IF Amplifier with Pilot Tone Decoding for TV Stereo Application Bipolar 1C Type Ordering code Package TDA 4940 Q 67000 -A 1872 DIP 22 The TDA 4940 has been designed as an intercarrier FM IF lim iter amplifier. It includes a coincidence dem odulator, an AF output and a decoding device. The decoding device is based


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    Q67000-A1872 85kHz/V 56kfi 100Hz 820pF 180pF TDA 4941 tda4940 TDA4941 tda low voltage audio amplifier ic tba 507 a STYROFLEX CAPACITOR Horizontal frequency kHz 15.625 TDA 4942 kHz-133 PDF

    transistor k 975

    Abstract: micro transistor 117
    Contextual Info: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1162 Features • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.


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    2SA1162 15Watts OT-23-3L -100uAdc, transistor k 975 micro transistor 117 PDF