TRANSISTOR J9 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

SGA9289Z

Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

SGA9289Z

Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

sga9189z

Abstract: marking p1z SGA-9189Z marking p1z transistor
Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This

SGA9189

Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
Contextual Info: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to

MARKING P2Z

Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
Contextual Info: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor J9

Contextual Info: KSD1943 NPN EPITAXIAL SILICON TRANSISTOR HIGH j9 POWER TRANSISTOR TO -220 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit VcBO 80 60 8 3 40 1 50 —5 5 ~ 1 50 V V V A W °C °C Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

Contextual Info: L ALLEGRO MICROSYSTEMS INC •=13 DSDM33Ö QQ03771 ö ■ T-91-01 P R O C E S S NJ903 Process NJ903 N-Channel Junction Field-Effect Transistor Proce ss N J903 is an N-channel junction fleldeffect transistor designed for very low O N resistance analog or digital switching applications.

RN1901FS

Abstract: RN1902FS RN1903FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
Contextual Info: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

7430 ic data sheet

Abstract: MSA094 339 marking code transistor BP317 LV2327E40R SC15 sot445
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LV2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

RN1903FS

Abstract: RN1902FS RN1901FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
Contextual Info: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

PVB42004X

Abstract: SC15 sot445
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor

Contextual Info: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN1970FS,RN1971FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1970FS,RN1971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Complementary to RN2970FS, RN2971FS

Contextual Info: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Philips 2222-030

Abstract: philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain

acrian RF POWER TRANSISTOR

Abstract: transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power
Contextual Info: O 1 8 2 9 9 8 . ACFjtlAN INC J97D ACRIAN INC ~T7 de 01406 r in ia e ooomoh □ ilKORIAN GENERAL 2005 D E S C R IP T IO N The 2005 is a common base transistor capable of providing 5 watts of C W RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed