TRANSISTOR J6 Search Results

4312 020 36640

Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

SGA9189

Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
Contextual Info: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to

Radar

Abstract: PH1214-12M radar 77 ghz
Contextual Info: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

Contextual Info: RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm

blw86

Abstract: ferroxcube wideband hf choke BY206
Contextual Info: m b5E » 711002b 0Db33Sû SST « P H I N BLW86 _PHILIPS INTERNATIONAL_ j H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is

equivalent of SL 100 NPN Transistor

Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA

Motorola 680

Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead
Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

D1629

Abstract: 2SK3653
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES

PH1214-2M

Abstract: .15 j63 1.5 j63 1035 transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

RN1967FS

Abstract: RN1968FS RN1969FS RN2967FS RN2969FS
Contextual Info: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Reducing the parts count enable the manufacture of ever more

transistor j39

Abstract: J31 transistor
Contextual Info: T=- an AMP ‘5 cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

2SC2237

Abstract: 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •

Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

MAPHST0034

Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor
Contextual Info: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry

ULBM5

Abstract: ASI10680
Contextual Info: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD

a 103 m Transistor

Abstract: A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75
Contextual Info: PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration

j6 transistor

Abstract: transistor j6 marking J6 transistors marking J6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to TP9015NND03

MAPRST1214-030UF

Abstract: transistor j6 transistor 20 dB 14 ghz
Contextual Info: MAPRST1214-030UF RADAR PULSED POWER TRANSISTOR 30W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle Preliminary Datasheet Revision 01/14/2003 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation

transistor j6

Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Contextual Info: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

S9015

Abstract: S9015M S9014M
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M