TRANSISTOR J377 Search Results

TRANSISTOR J377 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR J377 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
J377 Abstract: j377 datasheet 2SJ377 silicon power J377 transistor j377 Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance	Original	2SJ377 J377 j377 datasheet 2SJ377 silicon power J377 transistor j377	PDF
J377 Abstract: 2SJ377 j377 datasheet silicon power J377 transistor j377 Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance	Original	2SJ377 J377 2SJ377 j377 datasheet silicon power J377 transistor j377	PDF
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan		PDF
J377 Abstract: 2SJ377 Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.0 S (typ.)	Original	2SJ377 J377 2SJ377	PDF
J377 Abstract: 2sj377 Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance	Original	2SJ377 J377 2sj377	PDF
J377 Abstract: silicon power J377 2SJ377 transistor j377 Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance	Original	2SJ377 J377 silicon power J377 2SJ377 transistor j377	PDF
2SJ377 Abstract: J377 Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : \|Yfs\| = 4.0 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.16 Ω (typ.)	Original	2SJ377 2SJ377 J377	PDF
MJ3773 Abstract: AN-415 MJ6302 Contextual Info: MJ3773, MJ6302 SILICON 16 AM PERE POWER TR A N SISTO R S HIGH POWER NPN SILICO N POWER TRA N SISTO R S Hpibase transistors for ultimate circu it performance based on the designer's requirement. E P IB A S E NPN SILICO N 120, 140 V O L T S 200 W ATTS — designed for power am plifier and switching	OCR Scan	MJ3773, MJ6302 MJ3773 MJ6302 MJ3773 I--55 AN-415	PDF
J377 Abstract: MJ3771 MJ3772 TCA 875 AN-415 MJ6257 MSD6100 NIJ3771 Contextual Info: MJ3771, MJ3772, MJ6257 SILICON 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON HIGH POWER NPN SILICO N POWER TRAN SISTO RS 40 and 60 VOLTS 200 WATTS Select from Epibase transistors for ultimate circuit performance based on the design requirements. E P IB A S E - Designed fo r power am plifier and switching applications.	OCR Scan	MJ3771, MJ3772, MJ6257 NIJ3771 MJ3772 MJ3771 MJ3772 MJ6257 J377 TCA 875 AN-415 MSD6100 NIJ3771	PDF
powec rm 1110 Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor	OCR Scan	111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor	PDF
Contextual Info: CD4011QB Types II O ß CMOS Decade Up-Down Counter/Latch/Display Driver High-Voltage Type 20-V Rating D IS P L A Y I 2 BBS B 9 2 C S -3 I3 8 0 Features: Separate clo ck-u p and clo ck-do w n lines Capable o f d riv in g com m on cathode LEDs a n d o th er	OCR Scan	CD4011QB RCA-CD40110B	PDF
wiring diagram audio amplifier ic 6283 Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838 Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor	OCR Scan	4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838	PDF

1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175	PDF
germanium transistor Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006 Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types	OCR Scan		PDF