TRANSISTOR J 127 Search Results

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR J A J A - 2SC4843 V H F ~U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm 2.1 J:0.1 Low N oise F igure, H igh G ain. N F = l .l d B , |S 2 le l2 = 1 5 .5 d B f= lG H z

buz72a

Contextual Info: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BFG65 transistor

Contextual Info: Philips Semiconductors H 3 T 31 0 G 3 1 1 ^ 3 bbS SOT H A P X _ Product specification NPN 8 GHz wideband transistor ^ BFG65 N AI1ER PHILIPS/DISCRETE DESCRIPTION b'iE J> PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband

LA 7687 a

Contextual Info: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Package Dimensions Features •High f j : fy=3.5GHz typ . •Large current : (Ic=300mA). •Large allowable collector dissipation (1,3W max)

transistor bl 187

Abstract: yl1 TRANSISTOR f748 transistor ac 132 BF748
Contextual Info: Produc^jæcification Philips Semiconductors BF748 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL IPHIN 711062b 0044^71 S7T SbE PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

Contextual Info: Ordering num ber:EN 1970A f SA\YO | 2SC3751 W NO.1970A I1 f NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator Applications J Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process

TOKO A 50 GTE

Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
Contextual Info: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■

FR180

Abstract: BFR180
Contextual Info: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Ghz dB transistor

Contextual Info: Philips Semiconductors bbS3T31 0G24aT7 3T4 * A P X N ANER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES Product specification b7E J> BFG94 PINNING • High power gain PIN • Low noise figure 1 emitter • Low intermodulation distortion 2 base •

Contextual Info: PD -9.1582A International l R Rectifier IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsC=10ps, @360V VCE start , T j= 1 2 5 °C ,

transistor vc 548

Abstract: transistor C 548 B Philips
Contextual Info: bbSBTBl DDSMflDT Tb5 « A P X P hilips Sem iconductors NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES Product specification b7E J> PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability.

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

IRG4PC50KD

Contextual Info: International IÖR Rectifier PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc =1 Ofis, @360V VCE start , T j= 1 2 5 ° C ,

M 0349

Contextual Info: SEMICONDUCTOR KTC3620U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES M M B ・Low Noise Figure. D ・High Gain. J 1 H N MAXIMUM RATING Ta=25℃ CHARACTERISTIC 3 L C G A 2 SYMBOL RATING UNIT Collector-Base Voltage

KTC3600U

Abstract: 416 J50
Contextual Info: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

KTC3620U

Abstract: NPN transistor 9418 NPN transistor mhz s-parameter M 0349
Contextual Info: SEMICONDUCTOR KTC3620U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES M M B ・Low Noise Figure. ・High Gain. D J 1 H N MAXIMUM RATING Ta=25℃ CHARACTERISTIC 3 L C G A 2 SYMBOL RATING UNIT Collector-Base Voltage

KTC3620V

Abstract: transistor K 2937
Contextual Info: SEMICONDUCTOR KTC3620V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES B Low Noise Figure. High Gain. D G H A 2 1 K 3 P J C MAXIMUM RATING Ta=25 P DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 +

2sd823

Abstract: case outline
Contextual Info: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" 201 oa NPN T 00[]4,i3,i ~ 3 3 - Epitaxial Planar Silicon Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25 °C Collector to Base Voltage Collector to Emitter Voltage

18-12 049 transistor

Abstract: k 1094 transistor NE94432 0DD25 SIS 1124
Contextual Info: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:

6.5S5

Abstract: 5S51 ely transformers I282 A IRFM054 SS452 DD113
Contextual Info: Data Sheet No. PD-9.709A INTERNATIONAL RECTIFIER l O R j AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 N-CHANNEL 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.

Hewlett-Packard application note 967

Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
Contextual Info: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

RTM 866 - 485

Contextual Info: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 6427525 N E C . Tfl ELECTRONICS M|b457525 INC 98D 18986 D OOlñTflb b "J” P R EL IM IN A R Y SPEC IFIC A T IO N MOS FIELD EFFECT TRANSISTOR 2SKS1 s FAST SWITCHING . N-CHANNEL SI LI CON POWER MOS FET FACXACZ O I M I X S I 8 N S C U IU *< Features Suitable for switching power supplies,