TRANSISTOR J 127 Search Results

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR J A J A - 2SC4843 V H F ~U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm 2.1 J:0.1 Low N oise F igure, H igh G ain. N F = l .l d B , |S 2 le l2 = 1 5 .5 d B f= lG H z

buz72a

Contextual Info: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

LP1983

Abstract: motorola 039
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ

Helipot POTENTIOMETER

Abstract: 2N4947 transistor WL 431 Helipot 2N4949 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan
Contextual Info: The documentation and process conversion | measures necessary to comply with this | revision shall be completed by Q 9 - 3 0 - 92 J MIL-S-19500/388B 30 J u n e 1992 SUPERSEDING MIL-S-19500/388A 11 July 1983 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION

BFG65 transistor

Contextual Info: Philips Semiconductors H 3 T 31 0 G 3 1 1 ^ 3 bbS SOT H A P X _ Product specification NPN 8 GHz wideband transistor ^ BFG65 N AI1ER PHILIPS/DISCRETE DESCRIPTION b'iE J> PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband

2N3741

Contextual Info: 2N3741 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -80 V 25 W @ Te $ 25 °C

transistor te 2443

Abstract: 2N3740A
Contextual Info: 2N3740A SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740A is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -60 V 25 W @ Te $ 25 0C

NTE74LS244

Abstract: NTE74HCT244 NTE74HC259
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register Serial Input K m ^ Serial Input J £ 2 ^ v cc Shift/Load 3 Input H Input A E QA | H QH Input B [ ^ OB | NTE74221, 16-Lead DI P, See Diag. 249

LA 7687 a

Contextual Info: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Package Dimensions Features •High f j : fy=3.5GHz typ . •Large current : (Ic=300mA). •Large allowable collector dissipation (1,3W max)

ld1127

Abstract: transistor 45 f 123 BUZ72A T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE ObE J> PowerMOS transistor • LbSBTBl 001443? " B U Z 7 2 A T " T - 3 1 - May 1987 G ENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in Sw itched Mode Power Supplies

KTC3620S

Contextual Info: SEMICONDUCTOR KTC3620S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E B L L FEATURES DIM A B C D E G H J K L M N P Q ・High Gain. D ・Low Noise Figure. 3 G H A 2 1 Q J K MAXIMUM RATING Ta=25℃ CHARACTERISTIC P

TACAN transistor

Abstract: Thomson-CSF amplifier Solid State Microwave
Contextual Info: G S-THOMSON Ü4C D 1 7 ^ 5 ^ 3 7 gOOOlBS 5 SOLID STATE MICROWAVE si-or I 1522-2 ; THOMSON-CSF COMPONENTS CORPORATION j Montgomeryville, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 MICROWAVE POWER TRANSISTOR IFF, DME, TACAN DESCRIPTION The SSM SD1522-2 is a gold metalized, silicon NPN power transistor.

NTE74HC393

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74376 16-Lead DIP, See Diag. 249 Quadruple J-K Flip-Flop CURH J3 v c c ij 3 B 4J 04K 1KH 1Q Q 0 40 2Q Q g 2KH 2J Q GND Q B NTE74S387 16-Lead Dl P, See Diag. 249 1024-Bit (256 x 4) Open Collector PROM,

MRF531

Abstract: MRF531 motorola MOTOROLA TRANSISTOR mrf531
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF531 The RF Line HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed fo r high v o lta g e and h ig h cu rre n t f j sw itc h in g a p p li­ cations. These devices are also ideal fo r CRT d rivers.

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

transistor BC 247

Abstract: BC 247 b transistor
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445

Contextual Info: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.

TRANSISTOR C 4460

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR c 5578 SOT173 BFP90A 1702 NPN transistor IN 5408 ZG TRANSISTOR D 471 1346 transistor c 3421 transistor
Contextual Info: P h jJ jP ^ e m jç o n d u c to r^ ^ bbS 3 T31 □Q 3 1 4 b eì T 3E M APX Product specification NPN 5 GHz wideband transistor BFP90A H DESCRIPTION A f lE R p H I L I p S / ] > IS < ; R E ; TE: bTE PINNING NPN transistor in hermetically sealed, sub-miniature

Contextual Info: l i i y * j i L M-Tjr iìr n i jim i - » j i m 140 Commerce Drive iW i§ Cwi\jS G rn t Tèi: Montgomeryviile, PA 18936-1013 w w » * * * 215 6 3 1-9 840 „ - . 4 O L Ì I m -. 1- UI 3 RF & MICROWAVE TRANSiSTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR

Contextual Info: Ordering num ber:EN 1970A f SA\YO | 2SC3751 W NO.1970A I1 f NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator Applications J Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process

TOKO A 50 GTE

Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
Contextual Info: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■

IRG4PC50KD

Abstract: IRGPC50KD2 IRGPC50MD2
Contextual Info: PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , T J = 125°C, VGE = 15V

Contextual Info: SEMELAB PLC faPE D m 6133137 OGOOflTb 127 • S f l L B llll MOS POWER 4 IGBT 'Tin-j iFFi llll SEM E SML30G60AN LAB 600V 30A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.

FR180

Abstract: BFR180
Contextual Info: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!