TRANSISTOR J 127 Search Results

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR J A J A - 2SC4843 V H F ~U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm 2.1 J:0.1 Low N oise F igure, H igh G ain. N F = l .l d B , |S 2 le l2 = 1 5 .5 d B f= lG H z

buz72a

Contextual Info: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BFG65 transistor

Contextual Info: Philips Semiconductors H 3 T 31 0 G 3 1 1 ^ 3 bbS SOT H A P X _ Product specification NPN 8 GHz wideband transistor ^ BFG65 N AI1ER PHILIPS/DISCRETE DESCRIPTION b'iE J> PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband

2N3741

Contextual Info: 2N3741 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -80 V 25 W @ Te $ 25 °C

transistor te 2443

Abstract: 2N3740A
Contextual Info: 2N3740A SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740A is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -60 V 25 W @ Te $ 25 0C

LA 7687 a

Contextual Info: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Package Dimensions Features •High f j : fy=3.5GHz typ . •Large current : (Ic=300mA). •Large allowable collector dissipation (1,3W max)

ld1127

Abstract: transistor 45 f 123 BUZ72A T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE ObE J> PowerMOS transistor • LbSBTBl 001443? " B U Z 7 2 A T " T - 3 1 - May 1987 G ENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in Sw itched Mode Power Supplies

transistor bl 187

Abstract: yl1 TRANSISTOR f748 transistor ac 132 BF748
Contextual Info: Produc^jæcification Philips Semiconductors BF748 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL IPHIN 711062b 0044^71 S7T SbE PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

Contextual Info: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.

TRANSISTOR C 4460

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR c 5578 SOT173 BFP90A 1702 NPN transistor IN 5408 ZG TRANSISTOR D 471 1346 transistor c 3421 transistor
Contextual Info: P h jJ jP ^ e m jç o n d u c to r^ ^ bbS 3 T31 □Q 3 1 4 b eì T 3E M APX Product specification NPN 5 GHz wideband transistor BFP90A H DESCRIPTION A f lE R p H I L I p S / ] > IS < ; R E ; TE: bTE PINNING NPN transistor in hermetically sealed, sub-miniature

Contextual Info: l i i y * j i L M-Tjr iìr n i jim i - » j i m 140 Commerce Drive iW i§ Cwi\jS G rn t Tèi: Montgomeryviile, PA 18936-1013 w w » * * * 215 6 3 1-9 840 „ - . 4 O L Ì I m -. 1- UI 3 RF & MICROWAVE TRANSiSTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR

Contextual Info: Ordering num ber:EN 1970A f SA\YO | 2SC3751 W NO.1970A I1 f NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator Applications J Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process

TOKO A 50 GTE

Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
Contextual Info: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■

Ghz dB transistor

Contextual Info: Philips Semiconductors bbS3T31 0G24aT7 3T4 * A P X N ANER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES Product specification b7E J> BFG94 PINNING • High power gain PIN • Low noise figure 1 emitter • Low intermodulation distortion 2 base •

Contextual Info: PD -9.1582A International l R Rectifier IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsC=10ps, @360V VCE start , T j= 1 2 5 °C ,

transistor vc 548

Abstract: transistor C 548 B Philips
Contextual Info: bbSBTBl DDSMflDT Tb5 « A P X P hilips Sem iconductors NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES Product specification b7E J> PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability.

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

IRG4PC50KD

Contextual Info: International IÖR Rectifier PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc =1 Ofis, @360V VCE start , T j= 1 2 5 ° C ,

NEC 2561 LE 401

Abstract: la 7433 ltg 0351 6605 SP LTG 0222 Ic fr 9888
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTO R FOR MICROWAVE AM PLIFICATION FEATURES PACKAGE DIMENSION in mm • High f j 2.1 ±0.1 14 G H z TYP. 1.25+0.1 • High gain * -► 1 1 6 , 5 A X 1

M 0349

Contextual Info: SEMICONDUCTOR KTC3620U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES M M B ・Low Noise Figure. D ・High Gain. J 1 H N MAXIMUM RATING Ta=25℃ CHARACTERISTIC 3 L C G A 2 SYMBOL RATING UNIT Collector-Base Voltage

KTC3600U

Abstract: 416 J50
Contextual Info: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

KTC3620U

Abstract: NPN transistor 9418 NPN transistor mhz s-parameter M 0349
Contextual Info: SEMICONDUCTOR KTC3620U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES M M B ・Low Noise Figure. ・High Gain. D J 1 H N MAXIMUM RATING Ta=25℃ CHARACTERISTIC 3 L C G A 2 SYMBOL RATING UNIT Collector-Base Voltage

BC369

Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
Contextual Info: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.