TRANSISTOR J 108 Search Results

2SD1312

Abstract: w18 transistor
Contextual Info: SEC j m ^ iv r x Silicon Transistor A 2SD1312 N PN X U =1 > b =7 > i> 7*9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier mm / P A C K A G E # * / FEATURES DIMENSIONS Unit : mm O ¿T — T ' -i 7Ì" 7 > 7 i^<7) K -7 j o / J ^ T 'P t o è <, B i t HE T- r o

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

SC2334

Abstract: fls09 1444 G 92-0151 2SA1010
Contextual Info: NEC j \ f x > i / < 7 - Silicon Power Transistor A 2 P N P I t°i'+S'T./UJKS«' U 3 > h v S A 1 1 ^ S i i S J a iS W B E x - f ' y f v iS t ffl PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use 2 S A 1010 i i g J t i S i t B E X ^

2sc2530

Abstract: 2SA amplifier TRANSISTOR 2SC balast
Contextual Info: F U J IT S U SliCON HIGH SPEED POWER TRANSISTORS 2SC 2530 September 1979 <<* SILICON NPN RING EMITTER TRANSISTOR RET The 2SC 2530 is a silicon NPN M.C.-Head am plifier use transistor fabricated w ith Fujitus's unique Ring Em itter Transistor (RET) technology. RET devices are

Contextual Info: F ~7 > V 7 s / I ransistors 2SD1562A 2SD1562A NPN y ' J 3 > h 7 > y * $ Freq. P ow er Amp. Epitaxial Planar NPN Silicon Transistor 1 IB ffT S 5 B V Ce o = 1 6 0 V ) o 2) ASCW/a I ' o 3} tT ^F r^j^ , 4) 2S B 1085A t 3 > 7 ' J f * 5 o • Features 1) High breakdown voltage:

UPA57C

Abstract: PA57C 300B 4 npn transistor ic 14pin *PA57C upa57
Contextual Info: NEC j b =7 > '> * 9 C om pound T ransistor //PA57C NPN X fc: ^ * * > 7 J it t e r lJ =1 y — ij > h > h =7 h =7 > *¿> 7*9 U>T LED, NPN Silicon Epitaxial Darlington Transistor Array LED, amp Driver ¿¿PA57CÜ, l t f - > h 9~> =J > h 7 > v X 9 b |J > F > l ' 7 > y X j ' T l / ' i

J6 transistor

Abstract: 2SD1513 PA33 2sb1068 2sb10681
Contextual Info: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o

MPT100

Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &

Contextual Info: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and

NEC .PA1400H

Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
Contextual Info: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7

BLY88C

Contextual Info: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

jft 1411

Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
Contextual Info: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o

2SA1462

Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
Contextual Info: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

D1351

Abstract: ELLS 110 2SA1458 U110 5925B
Contextual Info: Silicon Transistor 2SA1458 P N P n L £ ? j r ' > 7 J U i & ' > ' z i > b :ÿ > i S Z > 9 m m p i g i l i ¿s j: z f * m # m x + » 0X4 o - y f > =r u 9 ï f â f n m i î & ' h S 0 3 1 / ^ : ? i i r ! l ; ô iV J ' ? v \, t 'o 02SC3731 t rJ>7°'J / 'y 9 UTÎÎfflT'ë i t o

transistor SM 2174

Abstract: tt2050 ENN6674 IT025
Contextual Info: Ordering number : ENN6674 j _ NPN Triple Diffused Planar Silicon Transistor TT2050 IsatlYOl Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed.

Contextual Info: l i i y * j i L M-Tjr iìr n i jim i - » j i m 140 Commerce Drive iW i§ Cwi\jS G rn t Tèi: Montgomeryviile, PA 18936-1013 w w » * * * 215 6 3 1-9 840 „ - . 4 O L Ì I m -. 1- UI 3 RF & MICROWAVE TRANSiSTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR

e50p

Abstract: 2SB1086A 2SD1563A
Contextual Info: ROHM CO LTD S "7 /Transistors ?aEflcm MOE D □DDSS4fl S E3RHM 2SB1086A -T - 3 3 - 1 7 T M $ * y T V j \ s - - m PNP y ' J □ > b 7 > y * $ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • 4’i-Ji2‘^'>£|5]/''Dimensions U n it : mm)

UPA79C

Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
Contextual Info: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ

BUK617-500AE

Abstract: TRANSISTOR C 557 B TIC 136 Transistor
Contextual Info: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

Pa75ha

Abstract: upa75 UPA75HA UPA75H 3773 P T108 T460 5551 transistor jsw15
Contextual Info: NEC j í í t / V T jK ÎM 'ê r h =7 > > * 9 C om poun d Transistor J ¿¿PA75HA PN Px ¥ 9 'J n PNP Silicon Epitaxial C om pound T ransistor D ifferential A m p lifie r 4$ di:/F E A T U R E S O 1 c h i p t f i t T ' i , ^ tztb, l ' ' 7 > X l : { , | | L

bux c

Abstract: BUX23 BUW38 ESM750A BUV18 ESM750 ESM952A BUV19 BUX13 BUX42
Contextual Info: lc sat est valeur du courant collecteur de fonctionnement recommandée. Les temps de commutation fw, tr, ts et t f et la tension de saturation collecteur-émetteur VcfYsafV sont j _ i . '_ j i s^cror/m uaiid //i/d tivm,co a i ç (sat)" rO Cn SUPERSWITCH transistor TO-3 selector guide