TRANSISTOR J 108 Search Results

IS955

Abstract: marking Y24 2SA1461 2SC3734 marking 2 AW
Contextual Info: NEC / ELECTRON DEVICE j SILICON TRANSISTOR / _ _ . _ . _ . 2SA1461 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed Switching: t stg = 110 ns 2.8 ± 0.2 • High Gain Bandwidth Product : f j = 5 1 0 M H z

2SD1312

Abstract: w18 transistor
Contextual Info: SEC j m ^ iv r x Silicon Transistor A 2SD1312 N PN X U =1 > b =7 > i> 7*9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier mm / P A C K A G E # * / FEATURES DIMENSIONS Unit : mm O ¿T — T ' -i 7Ì" 7 > 7 i^<7) K -7 j o / J ^ T 'P t o è <, B i t HE T- r o

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

SC2334

Abstract: fls09 1444 G 92-0151 2SA1010
Contextual Info: NEC j \ f x > i / < 7 - Silicon Power Transistor A 2 P N P I t°i'+S'T./UJKS«' U 3 > h v S A 1 1 ^ S i i S J a iS W B E x - f ' y f v iS t ffl PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use 2 S A 1010 i i g J t i S i t B E X ^

2sc2530

Abstract: 2SA amplifier TRANSISTOR 2SC balast
Contextual Info: F U J IT S U SliCON HIGH SPEED POWER TRANSISTORS 2SC 2530 September 1979 <<* SILICON NPN RING EMITTER TRANSISTOR RET The 2SC 2530 is a silicon NPN M.C.-Head am plifier use transistor fabricated w ith Fujitus's unique Ring Em itter Transistor (RET) technology. RET devices are

Contextual Info: F ~7 > V 7 s / I ransistors 2SD1562A 2SD1562A NPN y ' J 3 > h 7 > y * $ Freq. P ow er Amp. Epitaxial Planar NPN Silicon Transistor 1 IB ffT S 5 B V Ce o = 1 6 0 V ) o 2) ASCW/a I ' o 3} tT ^F r^j^ , 4) 2S B 1085A t 3 > 7 ' J f * 5 o • Features 1) High breakdown voltage:

UPA57C

Abstract: PA57C 300B 4 npn transistor ic 14pin *PA57C upa57
Contextual Info: NEC j b =7 > '> * 9 C om pound T ransistor //PA57C NPN X fc: ^ * * > 7 J it t e r lJ =1 y — ij > h > h =7 h =7 > *¿> 7*9 U>T LED, NPN Silicon Epitaxial Darlington Transistor Array LED, amp Driver ¿¿PA57CÜ, l t f - > h 9~> =J > h 7 > v X 9 b |J > F > l ' 7 > y X j ' T l / ' i

J6 transistor

Abstract: 2SD1513 PA33 2sb1068 2sb10681
Contextual Info: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o

MPT100

Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &

transistor BFR91

Abstract: BFR91 transistor CR NPN BFR91 philips
Contextual Info: Philips Semiconductors Product specification '- P NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE J> PIN 7 711002b PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,

TRR25-10XX2

Abstract: TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 50-10XX2 5012-X ISOLA DE 156
Contextual Info: A S E A B R Oü JN /AB B □□40300 S.ENICOÎ' □□□□SOS Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren mit 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes 1 J V - 5 3 ' o I Transistor Type/Type ATRR ATRR

Contextual Info: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and

marking E2

Abstract: 2SA1226 1480A
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1226 HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth product 2.8± 0.2 • Low Output Capacitance f j = 400 MHz TYP. C0b = 1.1 pF TYP.

NEC .PA1400H

Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
Contextual Info: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7

274 transistor

Contextual Info: •99 FOX ELECTRONICS " P 5t -<*3 11E D | 3 7 0 1 W ODOOZSfl b J F1100T / TRANSISTOR CLOCK OSCILLATOR The FOX F1100T Clock Oscillators are Discrete Transistor Oscillators which are TTL Compatible and are low cost. Fox oscillators feature a high quality welded

jft 1411

Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
Contextual Info: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o

2SA1462

Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
Contextual Info: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

300 volt 16 ampere transistor

Abstract: powerex ks62
Contextual Info: POldEREX INC =JñD D • 7ET4hai 00G2E03 m N ER EX ^ 1 KS621A40 Powerex, Inc., Mills Street, Youngwood, Pennsylvania 15697 412 925-7272 f Tentative Fast Switching Single Darlington Transistor Module 400 Amperes/125 Volts Description t<jTUNtC*A*U6 Powerex Fast Switching Single Transistor

transistor P1P

Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
Contextual Info: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and

LP1983

Abstract: motorola 039
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ

2SC1009A

Abstract: CIL 108
Contextual Info: SILICON TRANSISTOR ELECTRON DEVICE 2SC1009A F M /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f j = 250 MHz TYP. 2.8 ± 0.2 • Low Output Capacitance: CQb = 1.8 pF TYP.

D1351

Abstract: ELLS 110 2SA1458 U110 5925B
Contextual Info: Silicon Transistor 2SA1458 P N P n L £ ? j r ' > 7 J U i & ' > ' z i > b :ÿ > i S Z > 9 m m p i g i l i ¿s j: z f * m # m x + » 0X4 o - y f > =r u 9 ï f â f n m i î & ' h S 0 3 1 / ^ : ? i i r ! l ; ô iV J ' ? v \, t 'o 02SC3731 t rJ>7°'J / 'y 9 UTÎÎfflT'ë i t o

transistor Common Base amplifier

Abstract: TACAN TACAN transistor
Contextual Info: S G S-^THOMSON □4C D | 7^2^537 000Q13Ô SOLID MICROWAVE SD1534 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936 " 2 1 5 362-8500 PTWX 510-661-7299 J MICROWAVE POWER TRANSISTOR IFF, DME, TACAN DESCRIPTION The SSM SD1534 is a gold metalized, silicon NPN power transistor.