TRANSISTOR IA 15 RCA Search Results

ICAN-5296

Abstract: ICAN529
Contextual Info: Arrays HARRIS S E M I C O N D U C T O R RCA GE C A 3 1 4 6 , C A 3 1 8 3 I N T E R S IL May 1990 High-Voltage Transistor Arrays Features: A pplica tio n s: • Matched general-purpose transistors m Vb e matched ± 5 mV max. u Operation from DC to 120 MHz CA3146AE, E

Contextual Info: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage

2N3839

Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
Contextual Info: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use­ ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the

TRIAC RCA ca3058

Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
Contextual Info: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of

RCA-2N5179

Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
Contextual Info: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as

CA3046 RCA

Abstract: CA3046E 3045F
Contextual Info: Arrays m HARRIS S E M I C O N D U C T O R HARRIS RCA GE • CA3045, CA3046 INTERSIL M ay 1 9 9 0 General-Purpose N -P -N Transistor Arrays Three Isolated Transistors and O ne Differentially-C onnected Transistor Pair For L o w -P o w e r Applications at Frequencies from D C through the V H F R ange

chn 834 TRANSISTOR

Abstract: High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938
Contextual Info: RCA Solid State Total Data Service System The RCA Solid State DATABOOKS are supplemented throughout the year by a comprehensive data service system that keeps you aware of all new device announcements and lets you obtain as much or as little product information as

TA2761

Abstract: indiana general ferrites RCA-40608 HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE
Contextual Info: File No. 356 [JUCBZTD ^ P o w e r T r a n s is to rs Solid State Division 40608 RCA-40608 is an ep itax ial silico n n-p-n p lan ar tra n s is ­ tor. I t is e s p e c ia lly designed for operation a s a C la s s A, wide-band power am plifier in VHF circu its.

rca transistor manual

Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Contextual Info: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­

RCA LM324

Abstract: LM324L
Contextual Info: Operational Amplifiers HARRIS S E M I C O N D U C T O R RCA C A 124, C A 224, CA324, C A 2902, LM 324*, LM 2902* INTERSIL May 1990 Quad Operational Amplifiers For Commercial, Industrial, and Military Applications Features: A pp lica tio n s: • a a a ■

CA3097 equivalent

Abstract: CA3097E SCR 30v triggering circuit RCA-CA3097E volvo scr CA3097 PNP monolithic Transistor Arrays TA6281 0014L diode ZENER 927
Contextual Info: G E SOLID STATE Ql D E | 3075001 00141,55 7 Arrays CA3097 'Y 'q 3 Thyristor/Transistor Array '25 For Military, Comm ercial, and Industrial Applications Features: • Com plete isolation between elements m n-p-n transistor - Vceo = 3 0 V m in . /c = 100 mA (max.)

2N918

Abstract: 2N3600 RCA-2N918 874-LA N3600 LA 4303 TO72 package RCA-2N3600 RCA Transistor 2n918 transistor
Contextual Info: File No. 83 R F Pow er T r a n s is t o r s Solid State Di vision 2 N 918 2 N3600 RCA-2N918 and RCA-2N3IÏ00 are double-diffused epitaxial planar tran sisto rs o f the silicon n-p-n type. They are extremely useful in low -noise-am plifier, o sc il­ lator, and converter applications at VHF frequencies.

SCHEMATIC WITH IGBTS

Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
Contextual Info: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high

AN8603

Abstract: MOS-Gated Thyristor
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN8603.2 Abstract Conventional vertical power MOSFETs are limited at high voltages >500V by the appreciable resistance of their epitaxial drain region. In a new MOS-gate controlled device

Contextual Info: m HARRIS Military & Aerospace Products • RCA - GE • INTERSIL HCS245MS DIR [ T 20] VDD AO [~2 i | ] OE Al ^ is] BO High-Reliability Radiation-Hardened High-Speed CMOS/SOS Octal Transceiver A2 T B1 A3 | j f Te] B2 Aerospace Class S Screening A4 ^ is ] B3

AN-7505

Abstract: fairchild low power transistor 1977
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract Title N86 bt mpro d BTs h t itch eed d ghrt paty utho eyrds terrpoon, minctor, er ) OCI O frk Conventional vertical power MOSFETs are limited at high

Narda 904N

Abstract: transistor et 455 sealectro 2N5470 equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N
Contextual Info: File No. 350 RF P o w e r T r a n s is to rs Solid State Division 2N5470 RCA-2N5470* is an epitaxial silicon n-p-n planar transistor employing the overlay emitter-electrode con­ struction. It is intended for solid-state microwave radiosonde, communications, and S-band telemetry

RCA Solid State Power Transistor

Abstract: RCA Solid State power devices rca transistor RCA Solid State amplifier RCA1001 RCA transistors DD173 RCA1000 DD1731D rca+349+DARLINGTON
Contextual Info: E SOLI» STATE 3875081 □1 G E SOLID STATE D 0 1E Darlington Power Transistors_ 3Ö7SDÖ1 001730Ö □ | ~ 17308 •RCAiooo; RCA1001 File Num ber 594 8-Am pere Silicon N -P -N Darlington Power Transistors For Use as Output Devices in General-Purpose

"MC 140" transistor

Abstract: MC 140 transistor transistor mc 140 2N3229 transistor a200 MC 150 transistor RCA TO60 TRANSISTORS
Contextual Info: File No. 50 ^ R F P o w e r T r a n s is t o r s Solid State Division RCA-2N3229 transistor This up to FM, 150 The package from to all is and the silicon intended CW n-p-n for service type. applications at H ig h -P o w e r, frequencies Me . 2N3229 which the

AN-7505

Abstract: AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract /Title AN75 5 Subect Impro ed GBTs ith ast witch ng peed nd ighurent apaility) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOCI

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

Contextual Info: Arrays ffl H A R R IS S E M I C O N D U C T O R RCA GE CA3127 INTERSIL May 1990 High-Frequency N -P -N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz F e a tu re s : A pplications: G am -b an d w id th p ro d u c t f j > 1 GHz

WF VQE 22 c

Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE
Contextual Info: G E SOLID STATE Dl D E | 3fl75Clfll G014b3fc> 1 | A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E

CA314E

Abstract: CA3146E RCA CA3183E CA-3018 ca3118 CA3118AT CA3146AE 3183a CA3146E two transistor forward
Contextual Info: G E SOLID STATE Dl D E I 3fl75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 “T * H 3 * Z S High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ V g £ matched + 5m V max. ■ Operation from DC to 120 MHz CA 3118AT, T ; CA 3146A E, E