TRANSISTOR HFE CLASSIFICATION MARKING CE Search Results

B3 transistor

Abstract: KSA1203 KSC2883
Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

KSC2982

Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking

C1008Y TRANSISTOR

Abstract: c1008y C1008YC transistor BU 102 KSC1008 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C
Contextual Info: KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

Contextual Info: SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515

Contextual Info: 2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1202 Power Amplifier Applications Voltage Amplifier Applications Unit: mm • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

2SC5053

Contextual Info: Transistors SMD Type Medium Power Transistor 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

2SA1200

Abstract: 2SC2880
Contextual Info: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

KSC2881

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type NPN Epitaxial Silicon Transistor KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: Transistors Transistor T SMD Type Product specification KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: Transistors Transistor T SMD Type Product specification KSA1201 Features Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1 to 2W : Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

KTA1660

Abstract: KTC4372
Contextual Info: SEMICONDUCTOR KTC4372 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. FEATURES A High Voltage : VCEO=150V. C H High Transition Frequency : fT=120MHz Typ. . G J B E 1W (Monunted on Ceramic Substrate). Small Flat Package. DIM

KSA1203

Abstract: KSC2883
Contextual Info: KSC2883 KSC2883 Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TRANSISTOR FQ

Abstract: transistor marking fq FS transistor marking marking FQ fq transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03

KSB1121

Abstract: KSD1621
Contextual Info: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code

sot23 transistor marking 12E

Abstract: 12E MARKING kec marking N
Contextual Info: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES • Low Noise Figure, High Gain. • NF=1.2dB, |S2le|2=13dB f=lGHz . ° MAXIMUM RATING (Ta=25°C) ! SYMBOL V cB O V cE O V e bo Ic J i Mlà

BR c945 transistor

Abstract: TRANSISTOR C945 C945 2c945 C945L C945 NPN transistor c945 TRANSISTOR DATASHEET c945 transistor transistor npn c945 C945 plastic
Contextual Info: C945 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES    Excellent hFE Linearity Low noise Complementary to A733 A L 3 3 C B Top View

transistor sot23 2L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 3 *Collector-Emitter Voltage: VCEO=-150V *High Current Gain 1 2 SOT-23 *Pb-free plating product number:MMBT5401L ORDERING INFORMATION Order Number Normal

KTC3202-Y

Abstract: ktc3202y KTC3202-O
Contextual Info: MCC TM Micro Commercial Components KTC3202-O KTC3202-Y KTC3202-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • General Purpose Application Switching Application

transistor smd marking NE

Abstract: transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

transistor smd marking PE

Abstract: transistor smd marking BA transistor smd marking BA sot-23 CMBT857 pe sot23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

2SA1314

Contextual Info: 2SA1314 TOSHIBA 2 S A 1 314 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO PO W ER APPLICATIONS • High DC Current Gain and Excellent Linearity : h F E (1) = 140-600 (V CE = - IV, Ie = -0.5A) : hjpE (2) = 60 (Min.), 120 (Typ.), (VCE= -1 V , IC= -4 A )

2SB766A

Abstract: 2SD874A F MARKING
Contextual Info: 2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89  Large collector power dissipation PC  Complementary to 2SD874A M A C D Collector E B 

transistor smd marking NE

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION