TRANSISTOR HFE CLASSIFICATION MARKING CE Search Results

2SB1132

Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q
Contextual Info: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE

Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y

SOT89 MARKING CODE B2

Abstract: KSC2881 KSA1201
Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y

transistor 1203

Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

Contextual Info: KSC2883 NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

transistor B3 OF

Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
Contextual Info: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

B3 transistor

Abstract: KSA1203 KSC2883
Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

TRANSISTOR marking ar code

Abstract: KSA1201 KSC2881
Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code

KSC2982

Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking

C1008Y TRANSISTOR

Abstract: c1008y C1008YC transistor BU 102 KSC1008 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C
Contextual Info: KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base

Contextual Info: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • • • • Collector-Emitter Voltage VCEo= -1 2 0 V fT= 120MHz Collector Dissipation Pc= 1 -2 W : Mounted on Ceramic Board Complement to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2982 STROBE FLASH MEDIUM POWER AMPLIFIER SOT-89 • Excellent hFE Linearity: h F E i = 140~600 • Low Collector-Emitter Saturation Voltage: Vce sat = 0.5V • Collector Dissipation Pc =1 ~2W: Mounted on Ceramic Board ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

transistor c1009

Abstract: c1009 c1009 transistor KSA709 KSC1009
Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base

23 marking

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3876 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=6V , • Complementary to KTA1505. Ic=400mA. MAXIMUM RATINGS (Ta=25°C)

23marking

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1505 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I Linearity : hFE 2 =25(Min.) at V Ce=-6V , Ic=-400mA. • Complementary to KTC3876. MAXIMUM RATINGS (Ta=25°C)

Contextual Info: 2SA1182 TOSHIBA 2 S A 1 1 82 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AU D IO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SWITCHING APPLICATIONS • Excellent hpE Linearity : hFE( 2) = 25 (Min.)at V ce = —6V Ic = —400mA

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

Contextual Info: SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515

KTA1664

Abstract: KTC4376
Contextual Info: SEMICONDUCTOR KTC4376 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C 1W Mounted on Ceramic Substrate . H Small Flat Package. G J B E Complementary to KTA1664. DIM A B C D E F G H J K D D K MAXIMUM RATING (Ta=25 ) CHARACTERISTIC

Contextual Info: 2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1202 Power Amplifier Applications Voltage Amplifier Applications Unit: mm • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

2SC5053

Contextual Info: Transistors SMD Type Medium Power Transistor 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

2SA1200

Abstract: 2SC2880
Contextual Info: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

KSC2881

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type NPN Epitaxial Silicon Transistor KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: Transistors Transistor T SMD Type Product specification KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter