TRANSISTOR F21 Search Results

DTC114E

Abstract: 2SA2018 FUMF21N 2SA20 transistor F21
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Power management Dual-transistors FUMF21N TRANSISTOR WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Power management Dual-transistors FUMF21N TRANSISTOR WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power Management Dual-transistors UMF21N TRANSISTOR SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA2018 and DTC114E are housed independently in a package. z Power switching circuit in a single package.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power management Dual-transistors UMF21N TRANSISTOR SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA2018 and DTC114E are housed independently in a package. z Power switching circuit in a single package.

equivalent transistor TT 3034

Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages

transistor b722

Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

equivalent transistor TT 3034

Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

B861 transistor

Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
Contextual Info: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

DTD113EK

Contextual Info: DTD113EK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package package marking: DTD113EK; F21 a built-in bias resistor allows inverter circuit configuration without external input resistors bias resistor consists of a thin-film

Contextual Info: FUMF21N Power management Dual-transistors T WBFBP-06C DESCRIPTION Silicon epitaxial planar transistor Features z 2SA2018 and DTC114E are housed independently in a package. z Power switching circuit in a single package. z Mounting cost and area can be cut in half.

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF linear push-pull power transistor FEATURES BLV861 PINNING • Double stage internal input and output matching networks for an optimum wideband capability and

2N5020

Abstract: 2N5021 2N5460 transistor 2N5461 2N5461 2N5462 transistor f20
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-20 F-20 01/99 PJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA

DTD113EK

Abstract: T146
Contextual Info: 500mA / 50V Digital transistors with built-in resistors DTD113EK  Dimensions (Unit : mm) 2.9 DTD113EK 1.1 0.4  Structure NPN epitaxial planar silicon transistor (Resistor built-in type) 0.8 (3) 1.6 2.8  Features 1)Built-in bias resistors enable the configuration of an inverter

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

SC-59

Abstract: k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522 MUN2211
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA

k2647

Abstract: SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA

dtc114ek

Abstract: B 560 PNP TRANSISTOR Transistor circuits 2SA1037AK
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN/PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,

RF2125

Abstract: class h power amplifier schematic transistor J1y
Contextual Info: RF RF2125 M ICRO-DEVICES POWER AMPLIFIERS HIGH POWER LINEAR AMPLIFIER Hum A rsenide H eterojunction B ipolar Transistor HBT process, and has been designed for use as the final RF am plifier in digital PCS phone transm itters and base sta ­ tions requiring linear am plification operating betw een

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

k1647

Abstract: TRANSISTOR W 59 transistor F13 70 SC-59 DIODE S4 75a transistor F13 S4 75A transistor F13 10
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S SINGLE PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC, INVERTERS, DRIVERS, SWITCHING CIRCUITS

Contextual Info: RF RF2125 MICRO DEVICES POWER A M P L IF IE R S HIGH PO W ER LINEAR A M PLIFIER Hum Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta­ tions requiring linear amplification operating between

RF2125

Abstract: schematic diagram 50 VDC POWER SUPPLY
Contextual Info: RF RF2125 M ICRO-DEVICES POWER AMPLIFIERS H IG H POW ER L IN E A R A M P L IF IE R Hum A rsenide H eterojunction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier in digital PCS phone transm itters and base sta ­

class h power amplifier schematic

Abstract: power supply schematic diagram RF2125
Contextual Info: RF RF2125 M ICRO-DEVICES POWER AMPLIFIERS H IG H POW ER L IN E A R A M P L IF IE R Hum A rsenide H eterojunction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier in digital PCS phone transm itters and base sta ­