TRANSISTOR F13 10 Search Results

transistor F13

Contextual Info: DTB143EK Digital transistor, PNP, with 2 resistors Features • available in SMT3 SMT, SC-59 package Dimensions (Units : mm) DTB143EK (SMT3) • package marking: DTB143EK; F13 • a built-in bias resistor allows inverter circuit configuration without external

transistor F13

Abstract: transistor F13 10
Contextual Info: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Ordering Information Features ● ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882

F13 SOT23

Contextual Info: TS78L00 Series 3-Terminal 100mA Positive Voltage Regulator TO-92 Pin Definition: 1. Output 2. Ground 3. Input SOT-23 Pin Definition: 1. Output 2. Input 3. Ground SOP-8 SOT-89 Pin Definition: 1. Output 8. Input 2. Ground 7. Ground 3. Ground 6. Ground 4. N/C

transistor F13

Abstract: transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-12 F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts

DTB143EC

Contextual Info: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •E x te rn a l dimensions (Units: mm) •F e a tu re s 1) Built-in bias resistors en ab le the configuration of an inverter circuit 2 .9 + 0 .2 DTB143EK + 1 1 0.2 1 .9 ± 0 .2

T100

Abstract: U6084B U6084B-FP VT100
Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

Contextual Info: TS7900 Series 3-Terminal Fixed Negative Voltage Regulator TO-220 ITO-220 Pin Definition: 1. Ground 2. Input tab 3. Output General Description The TS7900 series of fixed output negative voltage regulators are intended as complements to the popular TS7800

2027mA

Abstract: 4677B
Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

atmel 028

Abstract: T100 U6084B U6084B-MFPG3Y VT100 820k switched potentiometer
Contextual Info: Features • • • • • Pulse-width Modulation up to 2-kHz Clock Frequency Protection Against Short-circuit, Load-dump Overvoltage and Reverse VS Duty Cycle 0% to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and

free transistor equivalent book

Abstract: free all transistor equivalent book transistor r3n
Contextual Info: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •F eatures 1) Built-in bias resistors enable the configuration of an inverter circuit w ithout connecting external input resistors (see the equivalent c ir­ cuit) . 2) The bias resistors consist of thinfilm resistors with complete isola­

HM-65262

Contextual Info: HM-65262/883 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris

HM1-65262

Abstract: HM-65262
Contextual Info: HM-65262/883 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil

HM-65262

Contextual Info: HM-65262/883 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max

transistor d 1557

Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
Contextual Info: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly

transistor F13

Abstract: 2SC2223 F12 MARKING 100MHZ
Contextual Info: 2SC2223 SOT-23-3L 2SC2223 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current 20 mA ICM: Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC2223 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current

transistor SMD f12

Abstract: f12 SMD TRANSISTOR transistor sot23 f12 smd transistor marking F12 F13 SOT23 f13 sot-23 2SC2223 F12 MARKING
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC2223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High gain bandwidth product fT=600MHz TYP 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Cob=1.0PF TYP +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low output capacitance.

transistor N14

Abstract: 22p03 P28 Transistor p18 transistor
Contextual Info: CFB2020A CFB2020A CFB2020A 16x16 2's Complement Multiplier DESCRIPTION: CFB2020A is a 16-by-16 2's complement multiplier which generates a 32-bit product. By using a modified Booth algorithm, this megafunction gives a reasonable speed and gate count. LOGIC SYMBOL:

ipc-16a

Abstract: DS3608 stk 808 c47s ipc 16a lifo stack 256 word 8 bit ScansUX1009 stk power amplifiers JC-14 stk amplifiers
Contextual Info: user benefits PACE features • Simplified pro­ gramming • • • • Simplified I/O design • Common memory and peripheral addressing • Six hardware-vectored priority interrupts 10-word on-chip stack Four control flag outputs Three sense inputs Four I/O control strobe

dynamic ram binary cell

Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
Contextual Info: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of

TTL TRANSISTOR MODEL PARAMETER

Contextual Info: FEATURES • 9 - 1 0 MHz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 38 J fcË f MODEL NO. CHD01940

r2c transistor

Abstract: 20190
Contextual Info: ERICSSON ^ PTB 20190 175 Watts, 470-806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, com mon em itter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically

sxxxx

Contextual Info: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP

HS1-65647RH

Abstract: HS1-65647RH-8 HS1-65647RH-Q HS-65647RH HS9-65647RH HS9-65647RH-8 HS9-65647RH-Q HS9A-65647RH-Q D1517
Contextual Info: HS-65647RH S E M I C O N D U C T O R Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functional Diagram • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day