TRANSISTOR F13 10 Search Results

F13 SOT23

Contextual Info: TS78L00 Series 3-Terminal 100mA Positive Voltage Regulator TO-92 Pin Definition: 1. Output 2. Ground 3. Input SOT-23 Pin Definition: 1. Output 2. Input 3. Ground SOP-8 SOT-89 Pin Definition: 1. Output 8. Input 2. Ground 7. Ground 3. Ground 6. Ground 4. N/C

DTB143EC

Contextual Info: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •E x te rn a l dimensions (Units: mm) •F e a tu re s 1) Built-in bias resistors en ab le the configuration of an inverter circuit 2 .9 + 0 .2 DTB143EK + 1 1 0.2 1 .9 ± 0 .2

T100

Abstract: U6084B U6084B-FP VT100
Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

2027mA

Abstract: 4677B
Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

atmel 028

Abstract: T100 U6084B U6084B-MFPG3Y VT100 820k switched potentiometer
Contextual Info: Features • • • • • Pulse-width Modulation up to 2-kHz Clock Frequency Protection Against Short-circuit, Load-dump Overvoltage and Reverse VS Duty Cycle 0% to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and

free transistor equivalent book

Abstract: free all transistor equivalent book transistor r3n
Contextual Info: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •F eatures 1) Built-in bias resistors enable the configuration of an inverter circuit w ithout connecting external input resistors (see the equivalent c ir­ cuit) . 2) The bias resistors consist of thinfilm resistors with complete isola­

HM-65262

Contextual Info: HM-65262/883 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris

HM1-65262

Abstract: HM-65262
Contextual Info: HM-65262/883 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil

transistor d 1557

Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
Contextual Info: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly

k1647

Abstract: TRANSISTOR W 59 transistor F13 70 SC-59 DIODE S4 75a transistor F13 S4 75A transistor F13 10
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S SINGLE PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC, INVERTERS, DRIVERS, SWITCHING CIRCUITS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC2223 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current

transistor SMD f12

Abstract: f12 SMD TRANSISTOR transistor sot23 f12 smd transistor marking F12 F13 SOT23 f13 sot-23 2SC2223 F12 MARKING
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC2223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High gain bandwidth product fT=600MHz TYP 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Cob=1.0PF TYP +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low output capacitance.

transistor N14

Abstract: 22p03 P28 Transistor p18 transistor
Contextual Info: CFB2020A CFB2020A CFB2020A 16x16 2's Complement Multiplier DESCRIPTION: CFB2020A is a 16-by-16 2's complement multiplier which generates a 32-bit product. By using a modified Booth algorithm, this megafunction gives a reasonable speed and gate count. LOGIC SYMBOL:

ipc-16a

Abstract: DS3608 stk 808 c47s ipc 16a lifo stack 256 word 8 bit ScansUX1009 stk power amplifiers JC-14 stk amplifiers
Contextual Info: user benefits PACE features • Simplified pro­ gramming • • • • Simplified I/O design • Common memory and peripheral addressing • Six hardware-vectored priority interrupts 10-word on-chip stack Four control flag outputs Three sense inputs Four I/O control strobe

TTL TRANSISTOR MODEL PARAMETER

Contextual Info: FEATURES • 9 - 1 0 MHz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 38 J fcË f MODEL NO. CHD01940

r2c transistor

Abstract: 20190
Contextual Info: ERICSSON ^ PTB 20190 175 Watts, 470-806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, com mon em itter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically

HS1-65647RH

Abstract: HS1-65647RH-8 HS1-65647RH-Q HS-65647RH HS9-65647RH HS9-65647RH-8 HS9-65647RH-Q HS9A-65647RH-Q
Contextual Info: HS-65647RH Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functional Diagram • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day

HM1-65642/883

Abstract: 80C86 80C88 HM65642C
Contextual Info: HM-65642/883 S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell

8 BIT ALU by 74181

Abstract: ABB b9 alu 74181 74181 f422
Contextual Info: CFT1811A CFT1811A CFT1811A 16-bit ALU 74181-type DESCRIPTION: CFT1811A is logically identical to the TI 74181, except that it operates on two 16-bit words instead of two 4-bit words. This arithmetic logic unit (ALU) performs 16 logical and 16 binary arithmetic

Contextual Info: X H M - 6 5 2 6 2 /8 8 3 16K X 1 Asynchronous CMOS Static RAM January 1992 Features Pinouts • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access

alu 74181

Abstract: 25B22 f422 S2 f19
Contextual Info: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),

A7 SMD TRANSISTOR

Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
Contextual Info: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is

A7 SMD TRANSISTOR

Abstract: SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10
Contextual Info: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8K x 8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,

SDA3202

Abstract: 3006X6 SMD TRANSISTOR N12 GPS05119 Q67000-H5113 Q67006-H5113 sda 3202 prescaler smd transistor marking ip SDA 3202 TRANSISTOR SMD MARKING CODE n9
Contextual Info: MGP 3006X6 GHz PLL with I2C Bus and Four Chip Addresses Bipolar IC Features ● ● ● ● ● ● 1-chip system for MPU-control I2C Bus 4 programmable chip addresses Short pull-in time for quick channel switch-over and optimized loop stability 3 high-current band switch outputs (20 mA)