TRANSISTOR ESM Search Results

97CC

Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Contextual Info: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

transistor ESM 30

Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950
Contextual Info: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os­ cillator stage in T V VH F tuners.

ESM379

Abstract: esm diodes
Contextual Info: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal

transistor ESM 30

Abstract: ESM269
Contextual Info: ESM 269 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , PLA N A R E P IT A X IA L PRELIM IN A R Y DATA N O T I C E P R E L IM I N A I R E ESM 269 is a very tow noise VHF transistor. It features low intermo­ dulation distorsion V CBO

2SC5471

Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Contextual Info: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN

blw95

Contextual Info: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a

LD 757 ps

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

PR37 RESISTOR

Abstract: PR37 resistors
Contextual Info: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

Contextual Info: N AMER PHILIPS/DISCRETE b^E » bbS3T31 QDS^SS2 T4T BLX13U IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear

4312 020 36640

Abstract: ferroxcube wideband hf choke
Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 0 0 2 W 0 SS3 I IAPX BLX39 b^E 3> H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

transistor ESM 16

Abstract: deflexion transistor ESM 30 ESM191 1S1500
Contextual Info: E S M 191.500 NPN S ILIC O N TR A N S IS TO R , D IF F U S E D MESA TRANSISTOR NPN S ILIC IU M , MESA DIFFUSE The ESM 191-500 is a fast switching high voltage transistor. It is primarly intended for use in horizon­ tal deflexion output stage o f black and

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N 326 Transistor

Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
Contextual Info: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

A 673 transistor

Abstract: LB 122 NPN TRANSISTOR SOT533 100pd PHE13002AU TRANSISTOR AH SOT-533 transistor aa a TRANSISTOR 106 d1 SILICON DIFFUSED POWER TRANSISTOR
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

transistor BU 184

Abstract: TRANSISTOR BDX pnp transistor 800v darlington NPN 600V 8a transistor transistor BDX 80 NPN Transistor 600V TO-220 pnp transistor 1000v transistor BU 109 transistor ESM NPN Transistor VCEO 1000V
Contextual Info: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

11AP

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

ESM 498

Abstract: TRANSISTOR BU4522AF BU4522AF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors.