SOT533 Search Results

Contextual Info: Package outline Plastic single-ended package IPAK ; 3 leads (in-line) SOT533 E A E1 A1 D1 mounting base D2 L1 Q L 1 2 3 e1 w b c M e 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D1 D2 E mm 2.38 2.22 0.93 0.46 0.89 0.71 0.56 0.46

PHE13002AU

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

100C

Abstract: BUJ103AU
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

BUJ101AU

Abstract: 400V 10A NPN transistor
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

SOT-533

Abstract: sot533
Contextual Info: Package outline Philips Semiconductors Plastic single-ended package IPAK ; 3 leads (in-line) SOT533 E A E1 A1 D1 mounting base D2 L1 Q L 1 2 3 e1 w b c M e 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D1 D2 E mm 2.38 2.22 0.89

PHU11NQ10T

Abstract: SOT533
Contextual Info: PHU11NQ10T TrenchMOS standard level FET Rev. 01 — 28 May 2002 Product data M3D445 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHU11NQ10T in SOT533 I-pak .

A 673 transistor

Abstract: LB 122 NPN TRANSISTOR SOT533 100pd PHE13002AU TRANSISTOR AH SOT-533 transistor aa a TRANSISTOR 106 d1 SILICON DIFFUSED POWER TRANSISTOR
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

buj103

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

E13b

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic single-ended package Philips version of I-PAK ; 3 leads (in-line) SOT533 E A A1 E1 D1 mounting base D Q L 1 2 e1 3 b w M 2.5 c e 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A

transistor b 647 c

Abstract: PHE13003AU b 647 transistor
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

TPD2E001

Abstract: TPD2E001DRLR TPD2E001DRSR TPD2E001DRYR TPD2E001DZDR TPD2E001YFPR TPD3E001 TPD4E001 TPD6E001
Contextual Info: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY

PHU97NQ03LT

Contextual Info: PHU97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

BTB04-600SAP

Abstract: S0817MH S1217NH BTA12-700BW BTB04 600SAP BTB04-600SAP equivalent BTB06-700SW btb04600sap s1217mh BTA06-400GP
Contextual Info: Thyristors 4-Quadrant Triacs - continued 4-Quadrant Triacs - continued Thyristors ST Microelectronics Cross Reference Guide Silicon Controlled Rectifiers SCRs - continued VDRM (V) IGT (mA) Package ST Part NXP Part 800 35/35/35/70 SOT78 / TO220AB Z0109NN

Contextual Info: SN74LVC1T45 SINGLE-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES515H – DECEMBER 2003 – REVISED JANUARY 2007 FEATURES • • • • • • • • Available in the Texas Instruments NanoFree Package

OV10630

Abstract: GCM32ER71C226KE19L
Contextual Info: DS90UB913A-CXEVM & DS90UB914A-CXEVM REV A User's Guide User's Guide Literature Number: SNLU135 JUNE 2013 Chapter 1 SNLU135 – JUNE 2013 Introduction 1.1 Overview The Texas Instruments DS90UB913A-CXEVM & DS90UB914A-CXEVM REV A Evaluation Modules EVM provides an easy way to evaluate the operation and performance of the DS90UB913AQ /

Contextual Info: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

nq03lt

Abstract: PHP101NQ03LT NQ03LT-01 PHU101NQ03LT
Contextual Info: PHP/PHU101NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

TPD2E001-Q1

Contextual Info: TPD2E001-Q1 www.ti.com SLLS993 – NOVEMBER 2009 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY FOR HIGH-SPEED DATA INTERFACES Check for Samples: TPD2E001-Q1 FEATURES APPLICATIONS • • • • • • • • • 1 2 • • • • • • Qualified for Automotive Applications

Contextual Info: SN74LVC1T45 SINGLE-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES515G – DECEMBER 2003 – REVISED DECEMBER 2005 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages

Contextual Info: SN74LVC2G34 DUAL BUFFER GATE www.ti.com FEATURES • • • • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 4.1 ns at 3.3 V Low Power Consumption, 10-µA Max ICC

Contextual Info: SN74LVC1T45 SINGLE-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES515G – DECEMBER 2003 – REVISED DECEMBER 2005 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages

Contextual Info: SN74LVC1G3157 SINGLEĆPOLE, DOUBLEĆTHROW ANALOG SWITCH SCES424D − JANUARY 2003 - REVISED APRIL 2005 D 1.65-V to 5.5-V VCC Operation D Useful for Both Analog and Digital D D D D D D D DBV, DCK, OR DRL PACKAGE TOP VIEW Applications Specified Break-Before-Make Switching

B-234

Contextual Info: SN74LVC1G3157 SINGLEĆPOLE, DOUBLEĆTHROW ANALOG SWITCH SCES424D − JANUARY 2003 - REVISED APRIL 2005 D 1.65-V to 5.5-V VCC Operation D Useful for Both Analog and Digital D D D D D D D DBV, DCK, OR DRL PACKAGE TOP VIEW Applications Specified Break-Before-Make Switching