TRANSISTOR E1P Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS

BFS17

Abstract: NXP BFS17 MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage

BFS17

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN msb003 philips tuners marking code ce SOT23 BFS17 E1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package.

BFS17

Abstract: philips tuners BFS17 E1 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN TRANSISTOR SOT23 MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package.

BFS17

Abstract: MSB003 SC14 BFS17 MARKING CODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package.

J 3305

Abstract: BLX67 transistor J 3305 transistor TE 901 transistor 3305 th258 R5305 transistor c 1974
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D m 711GÔEb 00277^1 2 E1PHIN BLX67 - r - 3 3 - 0 5 “ • U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,8 V.

PH11 SOT23

Abstract: BFS17 TRANSISTOR C 1177
Contextual Info: • ^53^31 00252Sb 2 83 H A P X Philips Sem iconductors Product specification N AMER PHILIPS/DISCRETE b?E NPN 1 GHz wideband transistor DESCRIPTION c BFS17 PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and

Contextual Info: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and

MSB003

Abstract: BFS17 RF TRANSISTOR SOT23 5 MARKING CODE 16 transistor sot23 E1P MARKING transistor 04 N 70 BP transistor E1p
Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic S O T23 package. 2 1 APPLICATIONS • A w ide range of RF applications such as: - M ixers and oscillators in TV tuners - RF com m un ica tio n s equipm ent.

Contextual Info: MCC BFS17
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components
Features • • • x NPN Transistor 25 mA 15 Volts 300 mWatts NPN transistor in a plastic SOT-23 package.

transistor E1p

Abstract: E1p SOT23 marking
Contextual Info: MCC TM Micro Commercial Components BFS17
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#
Features • • • • NPN Transistor 25 mA 15 Volts 300 mWatts NPN transistor in a plastic SOT-23 package.

transistor E1p

Abstract: BFS17 sot-23 marking LC SC14 Marking 2 NPN TRANSISTOR detailed E1P MARKING SC14 BFS17 MARKING CODE
Contextual Info: b3E D m labSa^EM 0 0 7 43 15 n a p c /p h i l i p s 0 70 M S I C B BFS17 semicond FOR D E T A IL E D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC14 0 R D ATASHEET N-P-N 4 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is intended fo r a wide range o f v.h.f. and u.h.f.

Contextual Info: MCC BFS17
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#
Features • • • NPN Transistor 25 mA 15 Volts 300 mWatts NPN transistor in a plastic SOT-23 package. A wide range of RF applications such as:

transistor E1p

Contextual Info: MCC BFS17
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#
Features • • • NPN Transistor 25 mA 15 Volts 300 mWatts NPN transistor in a plastic SOT-23 package. A wide range of RF applications such as:

2N3820

Abstract: P-Channel JFET 2n3820 transistor
Contextual Info: PHI L IP S 41E D INTERNATIONAL Philips Components D ata sheet status Preliminary specification d ate of Issue October 1990 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope, it is intended for use in general purpose amplifiers.

bu826

Abstract: BU626 BU826A SOT93 npn darlington transistor 131
Contextual Info: 45E D PHILIPS INTERNATIONAL E3 711002b □ D3CH2C1 T Ö P H I N '‘ BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circuit w ith integrated speed-up diode in a plastic SO T93 envelope, intended for fast switching application.

Philips FA 291

Abstract: BUV28AF BUV28F
Contextual Info: PHILIPS INTERNATIONAL 45E D a 711002b DD31DTS 2 C1PHIN BUV28F BUV28AF T-33-W SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters,' inverters, switching regulators, motor control

D988

Abstract: BUV26F Scans-00459 0031G73 max 1988 SWITCHING SYSTEMS INTERNATIONAL 26AF BUV26AF
Contextual Info: PHILIPS INTERNATIONAL MSB D ca 711Ga5b 0Q31G73 3 Q P H I N _ BUV26F BUV26AF J1 T - 3 3 - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

full bridge igbt induction heating generator

Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Contextual Info: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets

R3116N271A

Contextual Info: R3116x Series 0.8% Low Voltage Detector with Output Delay for Automotive Applications NO.EC-161-140219 OUTLINE The R3116x is a CMOS-based voltage detector IC with high detector threshold accuracy and ultra-low supply current, which can be operated at an extremely low voltage and is used for system reset as an example.

K9950

Abstract: SSM2275 transistor dk qh 2275S 2475P
Contextual Info: ANALOG ► DEVICES FEATURES Single or Dual-Supply Operation Excellent Sonic Characteristics Low Noise: 7 nV/VHz Low THD: 0.0006% Rail-to-Rail O utput High O utput C urrent: ±50 mA Low Supply C urrent: 1.7 m A /a m p lifie r W ide B andw idth: 8 MHz High Slew Rate: 12 V/ is

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.