0015923C
Abstract: 2N6547 sc08820
Contextual Info: 2N6547 High voltage fast-switching NPN power transistor Datasheet - production data Features • • • • NPN transistor High voltage capability High current capability Fast switching speed Applications 1 • • 2 TO-3 Switched mode power supplies Flyback and forward single transistor low
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V23990-P569F
Abstract: V23990-P569 tyco igbt module tyco igbt 1200V P569 V23990-P560-F
Contextual Info: V23990-P56X-F target datasheets Maximum Ratings / Höchstzulässige Werte version 0404 Module type Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition VCE
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v23990-p56x-fthickness50umdicke50umd-81359+6v23990-p569fv23990-p569tyco igbt moduletyco igbt 1200vp569v23990-p560-f
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NPN EBC SOT-23
Abstract: SOT-23 EBC NPN transistor ECB TO-92
Contextual Info: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003
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pjp110ao-220pjp168apj13003+5pj13005pj13007npn ebc sot-23sot-23 ebcnpn transistor ecb to-92
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tyco igbt
Abstract: tyco igbt 1200V D81359
Contextual Info: V23990-P366-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p366-ftj150d81359tyco igbt+1tyco igbt 1200v
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tyco igbt
Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit
Contextual Info: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p361-fd81359tyco igbtp361+2ntc thermistor 500 ohmspwm inverter circuit
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P364
Abstract: tyco igbt V23990-P364-F
Contextual Info: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p364-ftj150d81359p364+1tyco igbt
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tyco igbt
Abstract: SPWM 555 spwm igbt tyco igbt 1200V HP-1001 SPWM Inverter
Contextual Info: V23990-P360-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p360-ftj150d81359tyco igbt+5spwm 555spwm igbttyco igbt 1200vhp-1001spwm inverter
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sc 6038
Abstract: tyco igbt p363
Contextual Info: V23990-P363-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p363-fd81359sc 6038tyco igbt+1p363
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tyco igbt
Abstract: V23990-P365-F 600v 30 kHz IGBT
Contextual Info: V23990-P365-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p365-fd81359tyco igbt600v 30 khz igbt |
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germanium transistors PNP
Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,
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ibm43rf0100ibm43rf0100ev823vdcgermanium transistors pnp+8sige rf transistorpnp germanium transistorsige pnptransistor making listsige pnp transistorfmmt2907atabipolar transistor ghz s-parameterj1 transistor
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A 720 transistor
Abstract: MGW12N120D
Contextual Info: MOTOROLA -SEMICONDUCTOR TECHNICAL DATA Advance information DataSheet MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This high voltage Insulated Gate Bipolar Transistor IGBT is co-packaged with a
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MGY25N120D
Contextual Info: . - MOTOROLA m~EMlcoNDu~ToR TECHNICAL DATA Advanceinformation DataSheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode MGY25N120D Silicon Gate This high voltage Insulated Gate Bipolar Transistor lGB~ is co-packaged with a
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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power247tmtip122 tip127 audio boardbuk 450-1000transistor selection guide+7tip122 tip127 audio ampfjl6920 equivalentcar amptip41/tip42kse13009transistor tip31fjl6920
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APT13003Z-E1
Abstract: transistor 2808 APT13003 bcd
Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.
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tyco igbt
Abstract: V23990-P503-F THERMISTOR NTC 1100 ohm break resistor in igbt igbt tyco 270 IGBT tyco
Contextual Info: V23990-P503-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p503-fd81359rt/r25tyco igbt+4thermistor ntc 1100 ohmbreak resistor in igbtigbt tyco 270igbt tyco
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BFR540
Abstract: MSB003 BFR540 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a
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transistor
Abstract: QM30TB-H technical data mitsubishi KE924503 ke92 FILE TRANSISTOR
Contextual Info: Mitsubishi QM30TB-H datasheet technical data Page 1 of 6 Mitsubishi QM30TB-H = Powerex KE924503 7/28/2008 Mitsubishi QM30TB-H datasheet technical data
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Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with
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tyco igbt
Abstract: igbt tyco V23990-P501-F
Contextual Info: V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p501-f100rgond81359rt/r25+2tyco igbtigbt tyco
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wechselrichter
Abstract: TRANSISTOR TC 100 RG 150 diode diode p 600 k
Contextual Info: target datasheet version 09/02 V23990-P439-F flow PACK 1, 1200V Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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Contextual Info: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A
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Contextual Info: V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage
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MC 340 transistor
Abstract: P367 tyco igbt 1200V V23990-P367-F-PM
Contextual Info: Target datasheet flow PACK 0, 1200V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P367-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P366-F-PM
Abstract: tyco igbt tyco igbt 1200V
Contextual Info: Target datasheet flow PACK 0, 1200V, 10A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P366-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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