0015923C Search Results

2ST5949

Abstract: 0015923C
Contextual Info: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC s ct Application ■ 1 u d o 2r P e Audio power amplifier

0015923C

Contextual Info: 2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST5949 ■ Fast switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■

0015923C

Contextual Info: 2ST5949 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■

2ST5949

Abstract: 2ST2121 JESD97
Contextual Info: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ 1 Audio power amplifier 2 TO-3 Description The device is a NPN transistor manufactured

2N6287

Abstract: 2N6284 amplifier transistor 2N6284 Complementary Darlington Audio Power Amplifier
Contextual Info: 2N6284 2N6287 Complementary power Darlington transistors Features • Complementary transistors in monolithic Darlington configuration ■ Integrated collector-emitter antiparallel diode Applications 1 ■ Audio power amplifier ■ DC-AC converter ■ General purpose switching applications

2N3055

Abstract: hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier
Contextual Info: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base

BU931P

Abstract: BU931 BU931T JESD97
Contextual Info: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors

2N3055

Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
Contextual Info: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base

2ST2121

Abstract: 2ST5949 high power bipolar transistor selection st marking code JESD97
Contextual Info: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■ 2 Audio power amplifier

Contextual Info: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 High ruggedness electronic ignitions

2st5949

Abstract: 2ST2121 JESD97
Contextual Info: 2ST2121 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -250 V ■ Complementary to 2ST5949 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Applications ■ 1 2 Audio power amplifier TO-3 Description

ignition coil bu941

Abstract: JESD97 BU941 BU941P 0015923C High voltage ignition coil driver bu941 ignition for bipolar junction diode used for
Contextual Info: BU941 BU941P High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Integrated antiparallel collector-emitter diode Applications ■ 1 3 2 High ruggedness electronic ignitions

ignition coil bu941

Abstract: BU941P bu941 JESD97
Contextual Info: BU941 BU941P High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Integrated antiparallel collector-emitter diode Applications ■ 1 3 2 High ruggedness electronic ignitions

2ST2121

Abstract: 2ST5949 JESD97
Contextual Info: 2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST5949 ■ Fast switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■

BU931 ST

Abstract: BU931P BU931 bu931 equivalent BU931T
Contextual Info: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 2 The devices are bipolar Darlington transistors

0015923C

Abstract: 2ST2121 2ST5949 JESD97
Contextual Info: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC 1 Applications ■ 2 Audio power amplifier

2N3773

Abstract: 2N3773 transistor 0015923C 2n3773 power Amplifier JESD97
Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

Contextual Info: 2ST2121 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -250 V ■ Complementary to 2ST5949 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC u d 2ro P e Applications ■ s ct 1 Audio power amplifier

26025a

Contextual Info: ST26025A PNP power Darlington transistor Features • ■ High current monolithic Darlington configuration TAB s ct Integrated antiparallel collector-emitter diode Applications 1 u d o 2 ■ Automotive fan control ■ Linear and switching industrial equipment

Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage s ct Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

2n3773

Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

Contextual Info: 2N6284 2N6287 Complementary power Darlington transistors Features • Complementary transistors in monolithic Darlington configuration ■ Integrated collector-emitter antiparallel diode Applications 1 ■ Audio power amplifier ■ DC-AC converter ■ General purpose switching applications

2N3773

Abstract: 2N3773 transistor 2N3773 applications 2N3773 NPN Transistor 0015923C JESD97 transistor marking SUs
Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

ST26025A

Abstract: ST26025 st 26025a 26025a st260-25 0015923C st diode marking code TO3 ST2602 ST DARLINGTON TRANSISTOR 18031
Contextual Info: ST26025A PNP power Darlington transistor Features • ■ High current monolithic Darlington configuration TAB Integrated antiparallel collector-emitter diode Applications 1 2 ■ Automotive fan control ■ Linear and switching industrial equipment TO-3 Description