IBM43RF0100
Abstract: Power Transistor 2164
Contextual Info: . IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin ≈ 1.1dB @ 2.0GHz VCE = 2.0V, I C=5mA • Input IIP3 Capability: ≈ + 10dBm @ 2.0GHz, VCE = 2.5V, IC=10mA • Low Operating Voltage VCE = 1.0 to 2.5V
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ibm43rf010010dbmot353sgrf0100+1power transistor 2164
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HBT 00 01
Abstract: IBM43RF0100 HBT 01 05G HBT 01 05 HBT transistor mathcad ERJ-3GSYJ100 sige hbt HK10052N7S UMK105B102KW
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe HBT for CDMA Driver Applications at 1.9 GHz The IBM43RF0100 Silicon-Germanium SiGe High Dynamic Range, Low-Noise Transistor is a discrete heterojunction bipolar transistor (HBT) suitable for a wide range of RF driver applications including
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ibm43rf0100ibm43rf0100ev-190100cdmadrvhbt 00 01+8hbt 01 05ghbt 01 05hbt transistormathcaderj-3gsyj100sige hbthk10052n7sumk105b102kw
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7028 TRANSISTOR
Contextual Info: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low N oise Figure: NFmin ~ 1.1 dB @ 2.0G H z Low O perating Voltage • Input IIP3 C apability: ~ + 10dBm @ 2.0G Hz, Package: SO T353 V qq = 3V, lc =5m A Description The IB M 43R F 0100 is a S ilicon-G erm anium SiGe
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ibm43rf010010dbmsgrf01007028 transistor |
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IBM43RF0100
Abstract: transistor K 1413
Contextual Info: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin = 1 ,1dB @ 2 .0G H z • Low Operating Voltage • Input MP3 Capability: = + 10dBm @ 2.0G Hz, • Package: SO T353 VCc = 3V. lc=5mA Description The IB M 43R F0100 is a Silicon-Germanium SiGe
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germanium transistors PNP
Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,
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ibm43rf0100ibm43rf0100ev823vdcgermanium transistors pnp+8sige rf transistorpnp germanium transistorsige pnptransistor making listsige pnp transistorfmmt2907atabipolar transistor ghz s-parameterj1 transistor
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germanium transistor ac 128
Abstract: IBM REV 2.8 IBM43RF0100 IBM43RF0100EV09 SiGe POWER TRANSISTOR GERMANIUM TRANSISTOR SOT-353 Mark va va sot-353 IBM43RF0100EV19 IBMSGRF0100
Contextual Info: . IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin ≈ 1.1dB @ 2.0GHz VCE = 2.0V, I C=5mA • Input IIP3 Capability: ≈ + 10dBm @ 2.0GHz, VCE = 2.5V, IC=10mA • Low Operating Voltage VCE = 1.0 to 2.5V • Package: SOT353
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ibm43rf010010dbmot353sgrf0100+9germanium transistor ac 128ibm rev 2.8ibm43rf0100ev09sige power transistorgermanium transistorsot-353 mark vava sot-353ibm43rf0100ev19ibmsgrf0100
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24ghzbf517bf770abf771+16bf775bf799bf799wbfp181bfp181rbfp182xm0830sjsmd code marking 162 sot23-5marking v14 sot23-5rf transistor selectionsmd code marking rf ft sot23smd code marking nec rf transistorsot-363 infsmd marking d3 sot363xm0860shmga51563
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24ghzbf517bf770abf771+16bf799bf799wbfp181bfp182bfp182rbfp182wbgt24mtr11az1045-04fbar86-02lrh24ghz radarbga628l7smv1705bfr181walpha&omega date codemarking code onsemi diode2sc4586
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24ghzbf517b132-h8248-g5-x-76002sc3052ef+92n2222a sot23transistor smd marking code s2a1n4148 smd ll-34transistor smd code package sot232n2222 sot23transistor s1a 64 smd1n4148 sod323semiconductor cross referencetoshiba smd marking code transistor
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