IBM43RF0100
Abstract: Power Transistor 2164
Contextual Info: . IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin ≈ 1.1dB @ 2.0GHz VCE = 2.0V, I C=5mA • Input IIP3 Capability: ≈ + 10dBm @ 2.0GHz, VCE = 2.5V, IC=10mA • Low Operating Voltage VCE = 1.0 to 2.5V
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ibm43rf010010dbmot353sgrf0100+1power transistor 2164
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HBT 00 01
Abstract: IBM43RF0100 HBT 01 05G HBT 01 05 HBT transistor mathcad ERJ-3GSYJ100 sige hbt HK10052N7S UMK105B102KW
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe HBT for CDMA Driver Applications at 1.9 GHz The IBM43RF0100 Silicon-Germanium SiGe High Dynamic Range, Low-Noise Transistor is a discrete heterojunction bipolar transistor (HBT) suitable for a wide range of RF driver applications including
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ibm43rf0100ibm43rf0100ev-190100cdmadrvhbt 00 01+8hbt 01 05ghbt 01 05hbt transistormathcaderj-3gsyj100sige hbthk10052n7sumk105b102kw
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IBM43RF0100
Abstract: transistor K 1413
Contextual Info: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin = 1 ,1dB @ 2 .0G H z • Low Operating Voltage • Input MP3 Capability: = + 10dBm @ 2.0G Hz, • Package: SO T353 VCc = 3V. lc=5mA Description The IB M 43R F0100 is a Silicon-Germanium SiGe
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germanium transistor ac 128
Abstract: IBM REV 2.8 IBM43RF0100 IBM43RF0100EV09 SiGe POWER TRANSISTOR GERMANIUM TRANSISTOR SOT-353 Mark va va sot-353 IBM43RF0100EV19 IBMSGRF0100
Contextual Info: . IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin ≈ 1.1dB @ 2.0GHz VCE = 2.0V, I C=5mA • Input IIP3 Capability: ≈ + 10dBm @ 2.0GHz, VCE = 2.5V, IC=10mA • Low Operating Voltage VCE = 1.0 to 2.5V • Package: SOT353
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ibm43rf010010dbmot353sgrf0100+9germanium transistor ac 128ibm rev 2.8ibm43rf0100ev09sige power transistorgermanium transistorsot-353 mark vava sot-353ibm43rf0100ev19ibmsgrf0100
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